ACE7701A P-Channel Enhancement Mode MOSFET Description The ACE7701A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features -60V/-0.5A,RDS(ON)= 6Ω@VGS=- 10V -60V/-0.25A,RDS(ON)= 10Ω@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOT-23 package design Applications Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient ID IDM TA=25℃ TA=70℃ PD TJ -0.5 A -0.3 0.8 A 1.25 A 0.8 150 TSTG -55~150 RθJA 375 W O O C C /W VER 1.1 1 ACE7701A P-Channel Enhancement Mode MOSFET Packaging Type TSOT-23-3 Pin Description Pin Symbol Description 1 G Gate 2 S Source 3 D Drain Ordering information ACE7701A XX + H Halogen - free Pb - free BMS: TSOT-23-3 VER 1.1 2 ACE7701A P-Channel Enhancement Mode MOSFET Electrical Characteristics TA=25℃, unless otherwise noted. Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250 uA -60 Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA -1 Gate Leakage Current IGSS VDS=0V,VGS=±20V ±10 Zero Gate Voltage Drain Current IDSS VDS=-60V, VGS=0V -1 VDS=-60V, VGS=0V, TJ=55℃ -10 On-State Drain Current ID(on) Drain-Source On-Resistance RDS(ON) Forward Trans Conductance gfs VDS=-10V, ID=-0.5A Diode Forward Voltage VSD VGS=0V, IS=-0.2A VDS≦-5V,VGS=-10V -3 -1 V uA uA A VGS=-10V, ID=-0.5A 6 VGS=-4.5V, ID=-0.25A 10 1 Ω S -1.5 V Dynamic Total Gate Charge Qg 2 Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.72 Input Capacitance Ciss 25 Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time td(on) Turn-Off Time td(off) VDD=-30V, VGS=-15V, ID≡-0.5A VDS =-25 V, f = 1 MHz, VGS = 0V 0.53 13 nC pF 7.3 VDD=-25V, ID≡-200mA, VGEN=-10V 20 35 VER 1.1 ns 3 ACE7701A P-Channel Enhancement Mode MOSFET Typical Performance Characteristics VER 1.1 4 ACE7701A P-Channel Enhancement Mode MOSFET Packing Information TSOT-23-3 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.820 1.200 0.0323 0.0430 A1 0.000 0.100 0.0000 0.0040 A2 0.820 1.100 0.0323 0.0390 b 0.300 0.500 0.0120 0.0200 c 0.080 0.150 0.0030 0.0060 D 2.800 3.000 0.1100 0.1180 E 1.200 1.400 0.0470 0.0550 E1 2.200 2.550 0.0866 0.1000 e e1 0.95 TYP 1.800 L 0.037 TYP 2.000 0.529 REF 0.0710 0.0790 0.0208 REF L1 0.200 0.500 0.0079 0.0200 θ 0° 8° 0° 8° VER 1.1 5 ACE7701A P-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 6