DMN2019UTS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID max TA = 25°C 18.5mΩ @ VGS = 10V 5.4 A 21mΩ @ VGS = 4.5V 5.0 A 24mΩ @ VGS = 2.5V 4.6 A 31mΩ @ VGS = 1.8V 3.5 A NEW PRODUCT V(BR)DSS 20V Features • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected up to 2KV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Applications • • • • • Power management functions Load Switch • • Case: TSSOP-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.039 grams (approximate) D D TSSOP-8 1 2 3 4 D S1 S1 G1 D S2 S2 G2 8 7 6 5 G1 G2 S1 ESD PROTECTED TO 2kV Top View Top View Pin Configuration Bottom View S2 N-Channel N-Channel Internal Schematic Ordering Information (Note 4) Part Number DMN2019UTS-13 Notes: Case TSSOP-8 Packaging 2500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information 8 5 Logo N2019U Part no YY WW Xth week : 01~53 Year: “12” = 2012 1 4 Top View DMN2019UTS Document number: DS35556 Rev. 2 - 2 1 of 6 www.diodes.com December 2012 © Diodes Incorporated DMN2019UTS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Symbol VDSS VGSS Value 20 ±12 Units V V Continuous Drain Current (Note 5) VGS = 10V Steady State TA = +25°C TA = +70°C ID 5.4 4.3 A Continuous Drain Current (Note 5) VGS = 2.5V Steady State TA = +25°C TA = +70°C ID 4.6 3.7 A TA = +25°C IS 0.9 A IDM 30 A Steady Stat Pulsed Drain Current (Note 5) 10μs pulse, duty cycle = 1% Continuous Body Diode Forward Current (Note 5) Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Symbol PD RθJA RθJC TJ, TSTG Value 0.78 161 26 -55 to +150 Units W °C/W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Gate-Source Breakdown Voltage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS BVSGS 20 ±12 - 1.0 10 - V µA µA V VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±10V, VDS = 0V VDS = 0V, IG = ±250μA VGS(th) 0.35 RDS (ON) |Yfs| VSD - 0.95 18.5 21 21.5 22.5 23 24 31 1.0 V - 15.5 16.5 17 17.5 18 19 24 13 0.7 VDS = VGS, ID = 250μA VGS = 10V, ID = 7A VGS = 4.5V, ID = 7A VGS = 4.0V, ID = 7A VGS = 3.6V, ID = 6.5A VGS = 3.1V, ID = 6.5A VGS = 2.5V, ID = 5.5A VGS = 1.8V, ID = 3.5A VDS = 5V, ID = 5A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 143 74 29 202 8.8 1.4 3.0 53 78 562 234 - mΩ S V pF pF pF Ω nC nC nC ns ns ns ns Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 10V, ID = 6.5A VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMN2019UTS Document number: DS35556 Rev. 2 - 2 2 of 6 www.diodes.com December 2012 © Diodes Incorporated DMN2019UTS 20 30 VGS = 8V VGS = 3.0V 16 VGS = 2.5V 20 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = 2.0V 12 15 VGS = 1.5V 10 8 TA = 150°C 4 5 TA = 125°C TA = 85°C T A = 25°C 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 0.05 0.04 0.03 VGS = 1.8V 0.02 VGS = 2.5V VGS = 4.5V 0.01 0 0 0 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) T A = -55°C 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 0.5 1 1.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 2 0.04 VGS = 4.5V 0.03 T A = 150°C 0.02 T A = 125°C TA = 85°C T A = 25°C 0.01 0 TA = -55°C 0 4 8 12 16 ID, DRAIN CURRENT (A) 20 Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.6 0.04 1.4 VGS = 2.5V ID = 5.5A 1.2 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT VDS = 5V VGS = 4.5V VGS = 4.5V ID = 10A 1.0 0.03 VGS = 2.5V ID = 5.5A 0.02 VGS = 4.5V ID = 10A 0.01 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMN2019UTS Document number: DS35556 Rev. 2 - 2 3 of 6 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature December 2012 © Diodes Incorporated DMN2019UTS 1.2 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 20 1.0 0.8 ID = 1mA 0.6 ID = 250µA 0.4 TA = 25°C 12 8 4 0.2 0 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 100 1,000 -ID, DRAIN CURRENT (A) Ciss Coss 100 Crss 1.2 RDS(on) Limited f = 1MHz C, CAPACITANCE (pF) 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.1 PW = 100µs PW = 10µs 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance TJ(m ax) = 150°C TA = 25°C Single Pulse 0.01 0.1 10 20 -VDS, 1 10 DRAIN-SOURCE VOLTAGE (V) Fig. 10 Safe Operation Area 100 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1.4 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 157°C/W D = 0.02 0.01 D = 0.01 P(pk) D = Single Pulse 0.001 0.00001 0.0001 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response DMN2019UTS Document number: DS35556 Rev. 2 - 2 4 of 6 www.diodes.com December 2012 © Diodes Incorporated DMN2019UTS Package Outline Dimensions NEW PRODUCT Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. D TSSOP-8 Dim Min Max Typ a 0.09 − − A 1.20 − − A1 0.05 0.15 − A2 0.825 1.025 0.925 b 0.19 0.30 − c 0.09 0.20 − D 2.90 3.10 3.025 See Detail C E E1 e e c b E Gauge plane D L A1 − − 0.65 6.40 E1 4.30 4.50 4.425 L 0.45 0.75 0.60 All Dimensions in mm a A2 A − − Detail C Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y X C3 C1 C2 DMN2019UTS Document number: DS35556 Rev. 2 - 2 G Dimensions Value (in mm) X 0.45 Y 1.78 C1 7.72 C2 0.65 C3 4.16 G 0.20 5 of 6 www.diodes.com December 2012 © Diodes Incorporated DMN2019UTS NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated www.diodes.com DMN2019UTS Document number: DS35556 Rev. 2 - 2 6 of 6 www.diodes.com December 2012 © Diodes Incorporated