AUIRFS8408-7P
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
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Advanced Process Technology
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
40V
0.70m Ω
1.0mΩ
397A
240A
VDSS
RDS(on) typ.
max.
I D (Silicon Limited)
I D (Package Limited)
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Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features
of this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this product an extremely efficient and
reliable device for use in Automotive and wide variety of other
applications.
D
G
S
S
Applications
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Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
SMPS
Ordering Information
Base part number
Package Type
AUIRFS8408-7P
2
D Pak 7 Pin
D
G
S
S
S
S
D2Pak 7 Pin
G
D
S
Gate
Drain
Source
Standard Pack
Form
Tube
Quantity
50
Complete Part Number
AUIRFS8408-7P
Tape and Reel Left
800
AUIRFS8408-7TRL
Tape and Reel Right
800
AUIRFS8408-7TRR
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
TJ
TST G
Parameter
d
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
d
Thermal Resistance
Symbol
RqJC
RqJA
e
d
Parameter
k
Junction-to-Case
Junction-to-Ambient (PCB Mount)
j
e
Units
c
c
l
397
280
240
1300
294
1.96
± 20
-55 to + 175
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
EAS (T hermally limited)
EAS (tested)
IAR
EAR
Max.
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
A
W
W/°C
V
°C
300
501
809
mJ
See Fig. 14, 15, 24a, 24b
A
mJ
Typ.
Max.
Units
–––
–––
0.51
40
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
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© 2013 International Rectifier
April 25 ,2013
AUIRFS8408-7P
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage
VGS(th)
Drain-to-Source Leakage Current
IDSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
IGSS
RG
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Forward Transconductance
Qg
Total Gate Charge
Gate-to-Source Charge
Qgs
Gate-to-Drain ("Miller") Charge
Qgd
Total Gate Charge Sync. (Qg - Qgd)
Qsync
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Coss eff. (ER)
Effective Output Capacitance (Energy Related)
Coss eff. (TR)
Effective Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
dv/dt
Peak Diode Recovery
Reverse Recovery Time
trr
d
f
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Min.
40
–––
–––
2.2
–––
–––
–––
–––
–––
Typ.
–––
0.030
0.7
3.0
–––
–––
–––
–––
2.0
Max.
–––
–––
1.0
3.9
1.0
150
100
-100
–––
Units
V
V/°C
mΩ
V
Min.
156
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
210
55
66
144
23
125
107
85
10250
1540
1060
1880
2147
Max.
–––
315
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
S VDS = 10V, ID = 100A
ID = 100A
VDS =20V
nC
VGS = 10V
ID = 100A, VDS =0V, VGS = 10V
VDD = 26V
ID = 100A
ns
RG = 2.6Ω
VGS = 10V
VGS = 0V
VDS = 25V
pF ƒ = 1.0 MHz, See Fig. 5
VGS = 0V,VDS = 0V to 32V ,See Fig.11
VGS = 0V, VDS = 0V to 32V
Min.
Typ.
Max.
Units
–––
–––
397
–––
–––
1300
–––
–––
–––
–––
–––
–––
–––
0.9
2.7
44
46
43
44
1.9
1.3
–––
–––
–––
–––
–––
–––
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 240A by source
bonding technology. Note that current limitations arising from
heating of the device leads may occur with some lead mounting
arrangements.(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.100mH, RG = 50Ω,
IAS = 100A, V GS =10V. Part not recommended for use above
this value.
ISD ≤ 100A, di/dt ≤ 1337A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
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© 2013 International Rectifier
c
l
μA
nA
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mA
VGS = 10V, ID = 100A
VDS = VGS, ID = 250μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
g
d
Ω
g
g
i
h
Conditions
MOSFET symbol
showing the
A
G
integral reverse
p-n junction diode.
V TJ = 25°C, IS = 100A, VGS = 0V
V/ns TJ = 175°C, IS = 100A, VDS = 40V
TJ = 25°C
VR = 34V,
ns
IF = 100A
TJ = 125°C
di/dt = 100A/μs
TJ = 25°C
nC
TJ = 125°C
A TJ = 25°C
D
S
g
g
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as C oss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS .
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques
refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
Pulse drain current is limited by source bonding technology.
April 25 ,2013
AUIRFS8408-7P
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
BOTTOM
100
10
4.5V
≤60μs PULSE WIDTH
4.5V
≤60μs PULSE WIDTH
Tj = 25°C
Tj = 175°C
1
0.1
1
10
10
100
0.1
V DS, Drain-to-Source Voltage (V)
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
1000
T J = 175°C
100
T J = 25°C
10
1
VDS = 10V
≤60μs PULSE WIDTH
ID = 100A
VGS = 10V
1.6
1.2
0.8
0.4
0.1
2
3
4
5
6
7
8
VGS, Gate-to-Source Voltage (V)
100000
-20
20
60
100
140
180
Fig 4. Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Ciss
10000
-60
T J , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
C, Capacitance (pF)
1
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Coss
Crss
1000
ID = 100A
12.0
VDS= 32V
VDS= 20V
10.0
8.0
6.0
4.0
2.0
0.0
100
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
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© 2013 International Rectifier
0
50
100
150
200
250
300
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
April 25 ,2013
AUIRFS8408-7P
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
T J = 175°C
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
TJ = 25°C
10
1
1000
100μsec
100
Limited by Package
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1.6
Limited By Package
ID, Drain Current (A)
300
240
180
120
60
0
50
75
100
125
150
175
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
420
25
100
49
Id = 5.0mA
48
47
46
45
44
43
42
41
40
-60
-20
T C , Case Temperature (°C)
1.6
20
60
100
140
180
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
EAS , Single Pulse Avalanche Energy (mJ)
2500
1.4
ID
25A
52A
BOTTOM 100A
TOP
2000
1.2
Energy (μJ)
10
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
360
1
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
1.0
1500
0.8
1000
0.6
0.4
0.2
0.0
500
0
-5
0
5
10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
1msec
DC
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© 2013 International Rectifier
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
April 25 ,2013
AUIRFS8408-7P
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
0.01
100
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
600
Notes on Repetitive Avalanche Curves , Figures 14, 15
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 24a, 24b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 100A
500
400
300
200
100
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
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© 2013 International Rectifier
April 25 ,2013
3.5
4.5
ID = 100A
3.0
VGS(th) , Gate threshold Voltage (V)
RDS(on), Drain-to -Source On Resistance (m Ω)
AUIRFS8408-7P
2.5
2.0
TJ = 125°C
1.5
1.0
T J = 25°C
0.5
0.0
4.0
3.5
3.0
2.5
ID = 250μA
ID = 1.0mA
ID = 1.0A
2.0
1.5
1.0
4
6
8
10
12
14
16
18
20
-75
-25
VGS, Gate -to -Source Voltage (V)
Fig 16. On-Resistance vs. Gate Voltage
8
TJ = 25°C
TJ = 125°C
6
300
IF = 60A
V R = 34V
250
TJ = 25°C
TJ = 125°C
175
225
200
4
150
2
100
0
50
0
200
400
600
800
1000
0
200
diF /dt (A/μs)
400
600
800
1000
diF /dt (A/μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
300
12
IF = 100A
V R = 34V
10
TJ = 25°C
TJ = 125°C
8
QRR (nC)
IRRM (A)
125
350
QRR (nC)
IRRM (A)
10
75
Fig 17. Threshold Voltage vs. Temperature
12
IF = 60A
V R = 34V
25
T J , Temperature ( °C )
6
250
IF = 100A
V R = 34V
200
TJ = 25°C
TJ = 125°C
150
100
4
50
0
2
0
200
400
600
800
1000
diF /dt (A/μs)
Fig. 20 - Typical Recovery Current vs. dif/dt
6
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© 2013 International Rectifier
0
200
400
600
800
1000
diF /dt (A/μs)
Fig. 21 - Typical Stored Charge vs. dif/dt
April 25 ,2013
RDS(on), Drain-to -Source On Resistance ( mΩ)
AUIRFS8408-7P
10.0
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
8.0
6.0
4.0
2.0
0.0
0
100
200
300
400
500
ID, Drain Current (A)
Fig 22. Typical On-Resistance vs. Drain Current
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© 2013 International Rectifier
April 25 ,2013
AUIRFS8408-7P
Driver Gate Drive
D.U.T
+
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
VGS
20V
+
V
- DD
IAS
A
0.01Ω
tp
I AS
Fig 24b. Unclamped Inductive Waveforms
Fig 24a. Unclamped Inductive Test
Circuit
R
D
V DS
VDS
90%
V GS
D.U.T.
RG
+
- VDD
V10V
GS
10%
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on)
Fig 25a. Switching Time Test Circuit
tr
t d(off)
Fig 25b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
12V
tf
.2μF
.3μF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 26a. Gate Charge Test Circuit
8
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© 2013 International Rectifier
Qgs1 Qgs2
Qgd
Qgodr
Fig 26b. Gate Charge Waveform
April 25 ,2013
AUIRFS8408-7P
D2Pak - 7 Pin Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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© 2013 International Rectifier
April 25 ,2013
AUIRFS8408-7P
D2Pak - 7 Pin Part Marking Information
Part Number
AUFS8408-7P
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
D2Pak - 7 Pin Tape and Reel
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
10
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© 2013 International Rectifier
April 25 ,2013
AUIRFS8408-7P
†
Qualification Information
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer
qualification level is granted by extension of the higher Automotive level.
2
MSL1
D PAK - 7 Pin
Machine Model
ESD
Class M4 (+/- 600V)
AEC-Q101-002
Human Body Model
Class H3A (+/- 6000V)
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000V)
AEC-Q101-005
RoHS Compliant
††
††
††
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Highest passing voltage.
11
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© 2013 International Rectifier
April 25 ,2013
AUIRFS8408-7P
IMPORTANT NOTICE
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time and to discontinue any product or services without notice. Part numbers designated with the AU prefix follow automotive
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IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IRs
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
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Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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April 25 ,2013