AVAGO AFEM-S257-BLKG Gaas e-phemt, phemt and fbar technology Datasheet

AFEM-S257
2.5-2.7 GHz WiMAX Coexistence Front End Module
Data Sheet
Description
Features
Avago Technologies AFEM-S257 WiMAX Coexistence
Front End Module (FEM) is designed for mobile and fixed
wireless data applications in the 2.5 to 2.7 GHz frequency
range. The FEM is optimized for IEEE 802.16 WiMAX modulation. AFEM-S257 exhibits flat gain and good match while
providing linear power efficiency to meet stringent mask
conditions and supports two antenna connections for RX
diversity or two simultaneous RX signals.
 GaAs E-pHEMT, pHEMT and FBAR technology
This module utilizes Avago Technologies proprietary GaAs
pHEMT, and FBAR technology for superior performance
across voltage and temperature levels while providing
excellent out of band rejection. AFEM-S257 is in a 5x7x1
mm MCOB package for space-constrained applications.
 TX gain of 34 dB
 Typical Size: 5 x 7 x 1 mm
 3 to 5 V supply (Tx Path)
 Meets 802.16 masks at 24 dBm Pout , 16 QAM WiMAX
with 3.6 V and 420 mA
 16 QAM WiMAX EVM -34 dB (2.5%) at 24 dBm
 PAE of 18% at SEM compliant Pout = 24 dBm
 23 dB TX gain step in low power mode with reduced
Idsq
 Low power Idd, 95 mA at Pout = 0 dBm, 23 dB Gain Step
Functional Block Diagram
 35 dBc rejection at WiFi ISM band
RX-1
Preselector
ByPass LNA
 3.5 dB Noise Figure from ANT to RX
 25 dB of TX/RX Isolation
Coex BPF
 25 dB of Rx1/Rx2 Isolation
ANT-1
T/R-1
TX
ISMN
Coex BPF
Applications
 Portable and fixed WiMAX applications
Coex Linear Amplifier
T/R-2 RX Div. TX/
RX Switch
Package Diagram
TRSW22
25
24
VDD1_TX
7
GND
GND
Rx1
GND
TX
6
8
9
29
GND
30
GND
31
GND
32
GND
40
GND
41
GND
42
GND
33
GND
39
GND
44
GND
43
GND
34
GND
38
GND
37
GND
36
GND
35
GND
23
22
21
20
GND
LNA2_MOD
5
19
18
17
16
15
TRSW11
26
4
TRSW12
VREF
3
GND
PA_MOD
27
2
ANT1
28
1
GND
PA_EN
GND
Coex BPF
ANT2
ByPass LNA
Rx2
RX-2
Preselector
GND
nfo & OMN
GND
ANT SW
TRSW21
ANT-2
 50  all RF ports
TOP VIEW
10
VDD2_TX
11
VDD_RX
12
LNA1_MOD
13
ANTSW1
14
ANTSW2
Electrical Specifications
Absolute Minimum and Maximum Ratings
Table 1. Minimum and Maximum Ratings
Parameter
Specifications
Description
Pin
Min.
Max.
Unit
Supply Voltage
VDD1_TX
2.9
5.5
V
Supply Voltage
VDD2_TX
2.9
5.5
V
Supply Voltage
VDD_RX
2.7
5.5
V
LNA1 High/Low Gain
LNA1_MODE
0
3.3
V
LNA2 High/Low Gain
LNA2_MODE
0
3.3
V
PA Bias Control
VREF
5.5
V
PA Mode Control
PA_MODE
1.65
5.5
V
PA Enable
PA_EN
1.65
5.5
V
Switch Select ANT1
ANTSW1
0
4.8
V
Switch Select ANT2
ANTSW2
0
4.8
V
Switch Select RX1
TRSW11
0
4.8
V
Switch Select TX1
TRSW12
0
4.8
V
Switch Select RX2
TRSW21
0
4.8
V
Switch Select TX2
TRSW22
0
4.8
V
RF Input
TX
15
dBm
Using 16 QAM 3/4
RF Output
ANT1
25
dBm
Using 16 QAM 3/4
RF Output
ANT2
25
dBm
Using 16 QAM 3/4
Ch. 1 Receiver Output
RX1
10
dBm
Ch. 2 Receiver Output
RX2
10
dBm
150
°C
150
°C
Channel Temperature
Storage Temperature
2
-65
Comments
Table 2. Recommended Operating Range
Parameter
Specifications
Description
Pin
Min.
Supply Voltage
VDD1_TX
3
Typical
Max.
3.6
5
80
Supply Voltage
VDD2_TX
3
Supply Voltage
VDD_RX
2.7
3.6
5
LNA1,2 Low/High Gain
VREF Control
LNA1_MODE
LNA2_MODE
VREF
2.7
Switch Select ANT1,2
PA_MODE
PA_EN
mA
V
35
mA
ANTSW1
ANTSW2
V
Logic High
0
V
Logic Low
2
A
20K

2.75
2.8
2.7
2.85
3.0
TRSW11
TRSW12
TRSW21
TRSW22
V
3.6
V
Logic High
0.2
V
Logic Low
25
A
3.0
V
Logic High
0
V
Logic Low
2
A
s
Switch time
10K
20K

Input Impedance
2.7
3.0
V
Logic High
0
V
Logic Low
2
uA
1
10K
Frequency Range
Input Impedance
mA
1
Switch Select RX1,TX1
Pout = 24 dBm
3.0
10K
1.65
Pout = 24 dBm
V
5
1
PA Mode,
PA_Enable Control
Comments
V
mA
340
3.3
Unit
20K
2.5
2.7
us
Switch time

Input Impedance
GHz
Thermal Resistance, ch-b
22.6
°C/W
Channel to board (Tx Only)
Thermal Resistance, ch-b
48.1
°C/W
Channel to board (Rx Only)
Ambient Temperature
3
-40
+85
°C
All data measured on an FR4 demo board at VDD1_TX = VDD2_TX = 3.6 V, VREF = 2.8 V, Tc = 25° C, 50  at all ports. Unless
otherwise specified, all data is taken with OFDM 16-QAM ¾ convolutional coding modulated signal per IEEE 802.16e
with 10 MHz BW.
Table 3. TX-ANT Electrical Characteristics (25° C, 3.6 V and 50 )
Parameter
Performance
Min.
Typical
Input Return Loss
6
Gain Flatness
Gain Variation (VCC)
High Power
Mode
Unit
10
dB
1
dB
Over any 10 MHz
-1
1
dB
3 V to 5 V
-34
-30
dB
Vcc = 3.6 V & Po = 24 dBm
SEM-A @ 5.05 MHz
-16
-13
dBm/100 kHz
IBW = 100 kHz
SEM-B @ 6.5 MHz
-18
-13
dBm/MHz
IBW = 1 MHz
SEM-C @ 10.5 MHz
-24
-19
SEM-D @ 11.5 MHz
-27
-25
SEM-E @ 15.5 MHz
-33
-29.5
-40
-37
dBm
WiMAX Forum
Pout = 24 dBm
Pout (SEM Compliant)
+24
Total DC Current
Gain
29
EVM
Gain Step
19
Total DC Current
2fo @ 24 dBm Pout
Settling Time
TX leakage current
420
475
mA
34
36.5
dB
-37
-30
dB
23
26
dB
95
115
-33
3fo @ 24 dBm Pout
0.2
mA
-32
dBm/MHz
S
5
Pout = 0 dBm
Pout = 0 dBm
dBm/MHz
0.5
Output Load Mismatch
Ruggednes
30
A
Max defined at +85° C
8:1
VSWR
No permanent degradation or
damage at all phase angles
TX Path Out of Band Rejection
698 – 720 MHz
80
dBc
800 – 915 MHz
70
dBc
1574 – 1576 MHz
50
dBc
1805 – 1880 MHz
40
dBc
1930 – 1990 MHz
30
dBc
2110 – 2170 MHz
10
dBc
2400 – 2468 MHz
35
dBc
2451 – 2473 MHz
25
dBc
3300 – 3800 MHz
30
dBc
5000 – 5380 MHz
60
dBc
>7200 MHz
60
dBc
900 MHz
-147
dBm/Hz
1575 MHz
-148
dBm/Hz
1800 MHz
-148
dBm/Hz
1990 MHz
-148
dBm/Hz
2470 MHz
-135
dBm/Hz
2473 MHz
-134
dBm/Hz
2481 MHz
-124
dBm/Hz
TX Noise Power (24 dBm Output Power)
4
Comments
EVM
SEM-F @ 20.5 MHz
Low Power
Mode
Max.
ANT1 – RX1 and ANT2 – RX2 Electrical Characteristics
Table 4. Electrical Characteristics (25° C, 3.3 V and 50 )
Performance
Parameter
Min.
Typical
Input Return Loss
10
12
dB
0.5
dB
dB
Gain Ripple
Max.
Unit
Comments
Over any 10 MHz
LNA Gain
LNA Gain
15
High Gain Mode
Total DC Current
per Receiver
10
15
mA
13.5
dB
ANT to RX
dBm
CW Single Tone
By-pass Mode
RX Gain
6
10
Input P1dB
-3
0
Noise Figure
3.5
4.6
dB
Total DC Current
per Receiver
0.25
0.5
mA
RX Gain
-10
dB
ANT to RX
Input P1dB
14
dBm
CW Single Tone
Rx1 to Rx2 Isolation
Tx/RX-1 and TX/RX2 Isolation
Tx/Rx Isolation
25
25
Turn On Time
Rx leakage current
dB
25
1
dB
Switch Isolation
dB
TX to any RX path isolation
2
S
10
A
RX Path Out of Band Rejection
698 – 720 MHz
70
dBc
800 – 915 MHz
70
dBc
1574 – 1576 MHz
35
dBc
1805 – 1880 MHz
30
dBc
1930 – 1990 MHz
30
dBc
2110 – 2170 MHz
35
dBc
2400 – 2468 MHz
30
dBc
2451 – 2473 MHz
30
dBc
3300 – 3800 MHz
30
dBc
5
Max defined at +85° C
Table 5. Logic Table
TX ANT1 LPM
PA_EN
LNA1_
MODE
LNA2_
MODE
PA_
MODE
ANTSW1 ANTSW2 TRSW12 TRSW11 TRSW22 TRSW21 DIAGRAM
H
L
L
L
H
L
H
L
H
L
ANT1
RX1
ANT2
RX2
TX
1
TRSW2
TX ANT1 HPM
H
L
L
H
H
L
H
L
H
L
ANT1
RX1
TX
ANT2
1
RX2
TRSW2
TX ANT2 LPM
H
L
L
L
L
H
H
L
H
L
ANT1
RX1
ANT2
RX2
TX
1
TRSW2
TX ANT2 HPM
H
L
L
H
L
H
H
L
H
L
ANT1
RX1
TX
ANT2
1
RX2
TRSW2
RX1_ANT1_Hi_Gain
RX2_ANT2_Lo_Gain
L
H
L
L
X
X
L
H
L
H
RX1
ANT1
TX
ANT2
1
RX2
TRSW2
RX1_ANT1_Lo_Gain
RX2_ANT2_Lo_Gain
L
L
L
L
X
X
L
H
L
H
RX1
ANT1
TX
ANT2
1
RX2
TRSW2
RX2_ANT2_Hi_Gain
RX1_ANT1_Lo_Gain
L
L
H
L
X
X
L
H
L
H
RX1
ANT1
TX
ANT2
1
RX2
TRSW2
RX1_ANT1_Hi_Gain
RX2_ANT2_Hi_Gain
L
H
H
L
X
X
L
H
L
H
RX1
ANT1
TX
ANT2
1
TRSW2
FEM Shutdown (1)
L
L
L
L
L
L
Notes:
1. VREF is High for all modes except in shutdown mode. In shutdown mode VREF = 0 V.
6
L
L
L
L
VREF = 0
RX2
Evaluation Board Description
Table 6. Pin Description:
Top
Pin No.
Function
1
VDD2_TX
2
VDD2_Sense
3
VDD_RX
4
GND
5
VDD1_TX
6
GND
7
ANTSW1
8
GND
9
PAMODE
10
TRSW11
11
TRSW12
12
TRSW21
13
TRSW22
14
PA_EN
15
VREF
16
GND
17
LNA1_MODE
18
GND
Recommended turn on sequence
 Apply VDD1_TX and VDD2_TX
 Apply VDD_RX
 Apply VREF
 Apply TRSW11,12,21 and 22
 Apply ANTSW1 and ANTSW2
 Apply PA_EN
 For TX HPM Apply PAMOD HI
 For TX LPM Apply PAMOD LO
 For RX HG Apply LNA1,2 Mode HI
 For RX LG Apply LNA1,2 Mode LO
 Apply RF Input not to exceed 10 dBm
19
LNA2_MODE
20
ANTSW2
Turn off in reverse order
Bottom
Pin No.
Function
Table 7. TX Typical Test Conditions:
TX  ANT1
PIN
HPM
LPM
Function
VDD1,2_TX
3.6 V
3.6 V
Battery
PA_MODE
3.0 V
0V
Low Power Mode
VREF
2.8 V
2.8 V
Bias Control
PA_EN
3.0 V
3.0 V
PA Enable
ANTSW1,2
H
L
ANT Select
TRSW12,11,22,21
H
L
H
L
Figure 1. Pins on back of Demoboard
RX/TX Select
Table 8. RX Typical Test Conditions:
ANT1  RX1 ANT2  RX2
PIN
HG
LG
Function
VDD_RX
3.3 V
3.3 V
Battery
LNA1_MODE
3.0 V
0V
LNA1 Control
LNA2_MODE
3.0 V
0V
LNA2 Control
VREF
2.8 V
2.8 V
Bias Control
ANTSW1,2
X
TRSW12,11,22,21
L
7
X
H
L
ANT Select
H
RX/TX Select
Notes:
VDD1_TX, VDD2_TX can be tied together to reduce supply voltages, but
VREF needs to be a regulated voltage which is optimized for 2.8 V at VDD
of 3.6 V.
PA_EN and PAMODE are CMOS compatible pin; however, this can be
driven with 3 V0 for logic high.
Use jumpers on eval board to set control signal for desired mode of
operation.
Table 9. Eval Board Configuration:
Jumper
Position
Function
PA_EN


PA_Enable
PA_MODE


High Power Mode
LNA1MODE


LNA1 = High Gain
LNA2MODE


LNA2 = Low Gain
Note: There is no shutdown mode for LNA only low gain mode.
TX to ANT1
Figure 2. Front of Demoboard
Jumper
Position
TRSW11



Jumper
TRSW12
TX Path
TRSW21



TRSW22
TX Path
ANTSW1



ANTSW2
ANT1
TX to ANT2
Jumper
Position
Jumper
TRSW11



TRSW12
TX Path
TRSW21



TRSW22
TX Path
ANTSW1



ANTSW2
ANT2
ANT1 to RX1 & ANT2 to RX2
8
Jumper
Position
Jumper
TRSW11



TRSW12
RX1
TRSW21



TRSW22
RX2
ANTSW1



ANTSW2
Application Circuit AFEM-S257
VDD_RX
VDD2_TX
R22
100
VDD_RX
ANTSW1
LNA1MODE
C1
0.1 MF
+ C21
47 MF
Size B
C2
10 MF
VCTRL
VDD1_TX
PAEN
PAMODE
LNA1MODE
LNA2MODE
C3
1.0 MF
JP4-7
R21
10K
R20
10K
R19
10K
C5
0.1 MF
10
11
12
13
14
J1
SMA-39W
1
R18
10K
RFRX1
J2
SMA-39W
1
RFTX
J3
SMA-39W
ANTSW2
TRSW22
JP2
3
2
1
R17
3.3 K
1
3
2
1
R13
3.3 K
TRSW21
VCTRL
R14
3.3 K
ANTSW1
LNA2MODE
ANTSW2
JP1
3
2
1
VCTRL
R12
3.3 K
TRSW11
Figure 3. Demoboard Schematic
Land Pattern
TOP VIEW LAND PATTERN
6.30
0.70
15
16
17
18
19
20
21
0.55
14
22
23
24
Ø0.25
0.70
13
4.30
25
12
26
29
3.20
11
27
5.20
0.50 SQ
10
28
9
Common
GND
metal
8
7
6
5
4
3
2
1
Add large array of thermal vias under the
entire center GND pad of the module. Via size
and precise location are not critical. Thermal
vias are filled and then capped with copper.
Thicker Via Cu plating and larger number of
vias will improve the thermal performance.
Figure 4. Recommended footprint
9
RFRX2
C6
0.1 MF
R15
3.3 K
TRSW12
trsw11
trsw12
gnd6
ant1
gnd7
gnd8
ant2
gnd9
trsw21
PAMODE
TRSW11
TRSW12
TRSW21
TRSW22
PAEN
2.8 V
VREF
JP3
VCTRL
vdd1_tx
gnd5
rx1
gnd4
gnd3
tx
gnd2
rx2
gnd1
VDD_RX
U1
CoWi Module
28
27
26
25
24
R16
3.3 K
9
8
7
6
5
4
3
2
1
vdd2_tx
vdd_rx
lna1_mode
antsw1
antsw2
2
4
6
8
pa_en
pa_mode
vref
lna2_mode
trsw22
1
3
5
7
15
16
17
18
19
20
21
22
23
J4
SMA-39W
1
ANT1
J5
SMA-39W
ANT2
1
TOP VIEW
7.00
7.00 ±0.075
1.00 ±0.10
0.25
1
2
28
5.00 ±0.075
AVAGO
AFEM-S257
PYYWW
XXXXX
3
29
1.09
4
5
30
6
7
8
31
9
10
32
27
5.00
40
41
42
33
39
44
43
34
38
37
36
35
26
12
25
24
0.90
23
0.64 TYPICAL
0.95
22
21
20
19
18
17
16
14
0.40 SQ
0.50
Note: There is no Solder Mask at the bottom layer.
There is an oxide layer surrounding the GND and IO pads.
The overlap is 50 Mm. The oxide thickness ia negligible (1 Mm)
and should not be factored in the contactor design.
0.30 SQ
0.70
16
17
18
19
20
21
22
23
15
14
24
14
13
25
13
26
12
27
11
28
10
0.70
4.30
0.40 SQ
5.10
12
29
3.10
11
0.22
10
16
17
18
19
20
21
22
23
2.15
1.15
24
32
31
25
26
1.55
30
27
29
28
2.55
9
8
7
6
5
4
3
2
1
9
8
7
6
5
4
3
TOP VIEW SOLDERMASK
2
1
R0.05 All corners
5.60
RECOMMENDED STENCIL THICKNESS = 4 mils,
Stainless Steel, Laser Cut
Figure 6. Recommended Soldermask
Typical phone board IO pad construction
Pad is mask defined
Metal pad 0.5mm SQ
Mask opening 0.4mm SQ
Solder paste stencil 0.3mm SQ with rounded corners.
0.05
0.50
1
0.30
Figure 7. Recommended Stencil
10
0.95
0.15
15
Figure 5. Package dimensions
15
0.25
13
0.30
P
: Manufacturing Site Code
YYWW : Build Work Year and Work Week
XXXX : Production Lot Code
0.59
11
0.40
Handling and Storage
tp
Tp
Critical Zone
TL to Tp
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25° C to Peak
Time
Typical SMT Reflow Profile for Maximum Temperature = 260 +0/-5° C
Profile Feature
Sn-Pb Solder
Pb-Free Solder
Average ramp-up rate (TL to TP)
3°C/sec max
3°C/sec max
Preheat
– Temperature Min (Tsmin)
– Temperature Max (Tsmax)
– Time (min to max) (ts)
100° C
150° C
60-120 sec
150° C
200° C
60-180 sec
Tsmax to TL
– Ramp-up Rate
Time maintained above:
– Temperature (TL)
– Time (TL)
3°C/sec max
183° C
60-150 sec
217° C
60-150 sec
Peak temperature (Tp)
240 +0/-5° C
260 +0/-5° C
Time within 5° C of actual Peak Temperature (Tp)
10-30 sec
10-30 sec
Ramp-down Rate
6°C/sec max
6°C/sec max
Time 25° C to Peak Temperature
6 min max.
8 min max.
11
Device Orientation
REEL
USER
FEED
DIRECTION
TOP VIEW
COVER TAPE
Avago
AFEM-S257
PWWYY
XXXX
5.0 mm
7.0 mm
Tape Dimensions
8.00 ±0.10
(0.315 ±0.004)
1.50 ±0.10
(0.059 ±0.004)
4.00 ±0.10
(0.157 ±0.004)
2.00 ±0.10
(0.079 ±0.004)
1.75 ±0.10
(0.069 ±0.004)
7.50 ±0.10
(0.295 ±0.004)
16.00 +0.30 0.10
(0.630 +0.012 0.004)
1.50 +0.25
(0.059 +0.010)
0.318 ±0.13
(0.0125 ±0.0005)
8° MAX
5.33 ±0.10
(0.210 ±0.004)
A.
12
7° MAX
1.66 ±0.10
(0.065 ±0.004)
K.
7.40 ±0.10
(0.291 ±0.004)
B.
Avago
AFEM-S257
PWWYY
XXXX
CARRIER
TAPE
Avago
AFEM-S257
PWWYY
XXXX
Avago
AFEM-S257
PWWYY
XXXX
USER FEED DIRECTION
END VIEW
Reel Information
FRONT VIEW
T
Tape Start
Slot
CCD/KEAC
MADE IN MALAYSIA
6
1.5
Mi
n
PS
20.2 Min
330 Max Diameter
BACK VIEW
CCD/KEAC
MADE IN MALAYSIA
SIDE VIEW
6
PS
W1
Measured
At Hub
13+/0.20
Arbor Hole
Measured At Hub
W2
13
TAPE WIDTH
T
16 mm
7 ±0.50
W1
W2
W3
16.4 +2.0
22.4 Max 15.9 Min
0.0
19.4 Max
W3
Measured At
Outer Edge
100+/0.50
Hub Dia.
AFEM-S257 Part Number Ordering Information
Part Number
Devices
Per Container
Container
AFEM-S257-BLKG
100
Antistatic bag
AFEM-S257-TR1G
1000
13” Reel
AFEM-S257-TR2G
3000
13” Reel
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2011 Avago Technologies. All rights reserved.
AV02-2970EN - July 19, 2011
Similar pages