DMP2021UFDE P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits BVDSS RDS(ON) max -20V 16mΩ @ VGS = -4.5V 22mΩ @ VGS = -2.5V ID max TA = +25°C -9.0A -7.7A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Battery Management Application Power Management Functions DC-DC Converters 0.6mm Profile – Ideal for Low Profile Applications Low Gate Threshold Voltage Low On-Resistance ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Case: U-DFN2020-6 (Type E) Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.007 grams (Approximate) U-DFN2020-6 (Type E) D Pin1 6 D D 1 5 D D 2 4 S S G G 3 ESD PROTECTED Top View Gate Protection Diode Pin Out Bottom View Bottom View S Equivalent Circuit Ordering Information (Note 4) Part Number DMP2021UFDE-7 DMP2021UFDE-13 Notes: Case U-DFN2020-6 (Type E) U-DFN2020-6 (Type E) Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information FP Date Code Key Year Code Month Code 2016 D Jan 1 2017 E Feb 2 DMP2021UFDE Document number: DS38961 Rev. 2 - 2 Mar 3 FP = Product Type Marking Code YM = Date Code Marking Y = Year (ex: D = 2016) M = Month (ex: 9 = September) YM NEW PRODUCT ADVANCE INFORMATION ADVANCED Product Summary 2018 F Apr 4 May 5 2019 G Jun 6 1 of 7 www.diodes.com 2020 H Jul 7 Aug 8 2021 I Sep 9 Oct O 2022 J Nov N Dec D August 2016 © Diodes Incorporated DMP2021UFDE Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT ADVANCE INFORMATION ADVANCED Continuous Drain Current (Note 6) VGS = -4.5V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C t<10s ID TA = +25°C Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH Unit V V A IDM -11.1 -8.9 -60 IS -2.4 A IAS EAS -27 38 A mJ ID Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Continuous Source-Drain Diode Current (Note 6) Value -20 ±10 -9.0 -7.2 A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C TA = +70°C Steady state t<10s TA = +25°C TA = +70°C Steady state t<10s Steady state Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Value 0.76 0.48 165 116 1.90 1.20 67 47 18 -55 to +150 PD RJA PD RJA RJC TJ, TSTG Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 — — — — — — -1 ±10 V µA µA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(TH) -0.35 RDS(ON) — VSD — -1.0 16 22 40 80 -1.2 V Static Drain-Source On-Resistance — 12 15 19 21 -0.8 VDS = VGS, ID = -250μA VGS = -4.5V, ID = -7.0A VGS = -2.5V, ID = -5.0A VGS = -1.8V, ID = -3.0A VGS = -1.5V, ID = -1.0A VGS = 0V, IS = -1.0A Ciss Coss Crss Rg Qg Qg Qgs Qgd — — — — — — — — — — — — — — 2,760 262 220 16 34 59 3.5 8.3 7.5 25 125 96 48 33 — — — — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: tD(ON) tR tD(OFF) tF tRR QRR mΩ V Test Condition pF VDS = -15V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = -15V, ID = -4.0A ns VDS = -15V, VGS = -4.5V, RG = 1Ω, ID = -4.0A ns nC IF = -1.0A, di/dt = 100A/μs IF = -1.0A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMP2021UFDE Document number: DS38961 Rev. 2 - 2 2 of 7 www.diodes.com August 2016 © Diodes Incorporated DMP2021UFDE 30.0 20 VGS = -8.0V VDS = -5.0V VGS = -4.5V 18 VGS = -4.0V 25.0 VGS = -1.5V 16 15.0 10.0 VGS = -1.2V VGS = -0.9V 0.0 12 10 8 6 TA = 150 C 0 VGS = -1.0V 0.5 1 1.5 2 2.5 VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 2 0.03 VGS = -1.8V 0.02 VGS = -2.5V VGS = -4.5V 0.01 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.2 VGS = -1.8V ID = -5A 0.8 0.4 -50 Document number: DS38961 Rev. 2 - 2 0.5 1 1.5 2 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 2.5 0.08 0.07 ID = -7.0A 0.06 ID = -5.0A 0.05 0.04 ID = -3.0A 0.03 ID = -1.0A 0.02 0.01 0 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 5 On-Resistance Variation with Temperature DMP2021UFDE 0 0.09 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) VGS = -2.5V ID = -10A TA = 25C TA = -55C 0.1 30 2 1.6 0 3 VGS = -1.5V 0 TA = 85C TA = 125C 0.04 0 14 4 5.0 R DS(ON), DRAIN-SOURCE ON-RESISTANCE () ID, DRAIN CURRENT (A) VGS = -2.0V VGS = -1.8V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ID, DRAIN CURRENT (A) VGS = -2.5V 20.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT ADVANCE INFORMATION ADVANCED VGS = -3.0V 3 of 7 www.diodes.com 1 2 3 4 5 6 7 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristic 8 0.04 0.03 VGS = -1.8V ID = -5A 0.02 VGS = -2.5V ID = -10A 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature August 2016 © Diodes Incorporated 20 )V ( E G A T 0.6 L O V D L O H S 0.4 E R H T E T A G 0.2 , )H 18 VGS(TH), GATE THRESHOLD VOLTAGE (V) 0.8 IS, SOURCE CURRENT (A) 16 -ID =1mA - ID= 250µA 14 12 10 TA= 150C 8 TA= 125 C 6 TA= 85C TA= 25C TA= -55C 4 T (S G 2 V 0 -50 0 -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 8 10000 VGS, GATE-SOURCE VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) f = 1MHz Ciss 1000 Coss Crss 100 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure Figure9 9Typical ypical Junction Capacitance 20 VDS = -15V ID = -4A 0 10 20 30 40 50 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate-Charge Characteristics 60 100 RDS(ON) LIMITED ID, DRAIN CURRENT (A) NEW PRODUCT ADVANCE INFORMATION ADVANCED DMP2021UFDE 10 PW =100µs PW =1ms PW =10ms 1 PW =100ms 0.1 PW =1s TJ(MAX)=150℃ TC=25℃ PW =10s Single Pulse DUT on 1*MRP board DC VGS= -4.5V 0.01 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 SOA, Safe Operation Area DMP2021UFDE Document number: DS38961 Rev. 2 - 2 4 of 7 www.diodes.com August 2016 © Diodes Incorporated DMP2021UFDE D=0.5 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT ADVANCE INFORMATION ADVANCED 1 D=0.9 D=0.3 0.1 D=0.7 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t) = r(t) * RθJA RθJA= 168℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 0.0001 DMP2021UFDE Document number: DS38961 Rev. 2 - 2 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 12 Transient Thermal Resistance 5 of 7 www.diodes.com 100 1000 August 2016 © Diodes Incorporated DMP2021UFDE Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. NEW PRODUCT ADVANCE INFORMATION ADVANCED U-DFN2020-6 (Type E) A3 A1 A D b1 K1 D2 E E2 L1 L(2X) K2 Z(4X) e b(6X) U-DFN2020-6 Type E Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 0.15 b 0.25 0.35 0.30 b1 0.185 0.285 0.235 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 E 1.95 2.05 2.00 E2 1.40 1.60 1.50 e 0.65 L 0.25 0.35 0.30 L1 0.82 0.92 0.87 K1 0.305 K2 0.225 Z 0.20 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type E) Dimensions Y3 Y2 X2 C X X1 X2 Y Y1 Y2 Y3 Y1 X1 X(6x) DMP2021UFDE Document number: DS38961 Rev. 2 - 2 C Value (in mm) 0.650 0.400 0.285 1.050 0.500 0.920 1.600 2.300 Y (2x) 6 of 7 www.diodes.com August 2016 © Diodes Incorporated DMP2021UFDE IMPORTANT NOTICE NEW PRODUCT ADVANCE INFORMATION ADVANCED DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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