Renesas BCR5AM-12LA-A8 Triac medium power use Datasheet

BCR5AM-12LA
Triac
Medium Power Use
REJ03G0293-0300
Rev.3.00
Nov 30, 2007
Features
• IT(RMS) : 5 A
• VDRM : 600 V
• IFGT I, IRGT I, IRGT III : 20 mA (10 mA)Note6
• Non-Insulated Type
• Planar Passivation Type
Outline
RENESAS Package code: PRSS0004AA-A
(Package name: TO-220)
4
2, 4
3
1
12
1.
2.
3.
4.
T1 Terminal
T2 Terminal
Gate Terminal
T2 Terminal
3
Applications
Switching mode power supply, light dimmer, electronic flasher unit, control of household equipment such as TV sets,
stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, solenoid driver, small motor control, copying
machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Parameter
Symbol
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
REJ03G0293-0300
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Rev.3.00
Nov 30, 2007
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
BCR5AM-12LA
Parameter
RMS on-state current
Symbol
IT(RMS)
Ratings
5
Unit
A
Surge on-state current
ITSM
50
A
I2 t
10.4
A2s
PGM
PG(AV)
VGM
IGM
Tj
Tstg
—
3
0.3
10
2
– 40 to +125
– 40 to +125
2.0
W
W
V
A
°C
°C
g
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.8
Unit
mA
V
VFGT I
VRGT I
VRGT III
IFGT I
IRGT I
IRGT III
VGD
Rth(j-c)
—
—
—
—
—
—
0.2
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
20Note6
20Note6
20Note6
—
3.0
V
V
V
mA
mA
mA
V
°C/W
Tj = 125°C, VD = 1/2 VDRM
Junction to caseNote3 Note4
(dv/dt)c
5
—
—
V/µs
Tj = 125°C
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Conditions
Commercial frequency, sine full wave
Note3
360° conduction, Tc = 103°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltageNote2
Gate trigger currentNote2
I
II
III
I
II
III
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note5
commutating voltage
Notes: 2.
3.
4.
5.
6.
Test conditions
Tj = 125°C, VDRM applied
Tc = 25°C, ITM = 7 A,
Instantaneous measurement
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Measurement using the gate trigger characteristics measurement circuit.
Case temperature is measured at the T2 tab 1.5 mm away from the molded case.
The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
High sensitivity (IGT ≤ 10 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 2.5 A/ms
3. Peak off-state voltage
VD = 400 V
REJ03G0293-0300
Page 2 of 6
Rev.3.00
Nov 30, 2007
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
BCR5AM-12LA
Performance Curves
102
7
5
3
2
Rated Surge On-State Current
100
Tj = 125°C
101
7
5
3
2
Tj = 25°C
100
7
5
3
2
Surge On-State Current (A)
On-State Current (A)
Maximum On-State Characteristics
60
50
40
30
20
10
2 3 4 5 7 101
2 3 4 5 7 102
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
VGM = 10V
101
7
5
3 VGT = 1.5V
2
100
7
5
3
2
PG(AV)
= 0.3W
PGM = 3W
IGM = 2A
IGT = 20mA
102
7
5
4
3
2
101
Typical Example
IRGT III
IRGT I
IFGT I
–60 –40 –20
0 20 40 60 80 100 120 140
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Typical Example
102
7
5
4
3
2
–60 –40 –20
0 20 40 60 80 100 120 140
Junction Temperature (°C)
REJ03G0293-0300
Page 3 of 6
103
7
5
4
3
2
Gate Current (mA)
103
7
5
4
3
2
101
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Conduction Time (Cycles at 60Hz)
Rev.3.00
Nov 30, 2007
Transient Thermal Impedance (°C/W)
Gate Voltage (V)
70
On-State Voltage (V)
VGD = 0.2V
10–1
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
80
0
100
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6
102
7
5
3
2
90
102 2 3 5 7 103 2 3 5
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
BCR5AM-12LA
Allowable Case Temperature vs.
RMS On-State Current
8
160
7
140
Case Temperature (°C)
On-State Power Dissipation (W)
Maximum On-State Power Dissipation
6 360° Conduction
Resistive,
5 inductive loads
4
3
2
1
0
0
1
2
3
4
5
6
7
8
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
1
3
4
2
5
8
7
6
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
Ambient Temperature (°C)
All fins are black painted
140 aluminum and greased
120 × 120 × t2.3
120
100 × 100 × t2.3
100
60 × 60 × t2.3
80
60 Curves apply
regardless of
40 conduction angle
Resistive,
20 inductive loads
Natural convection
0
0
1
2
3
4
5
6
7
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
8
0
0.5
1.0
1.5
2.0
2.5
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
105
7 Typical Example
5
3
2
Holding Current (mA)
Ambient Temperature (°C)
120
RMS On-State Current (A)
160
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Curves apply regardless
of conduction angle
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20
REJ03G0293-0300
Page 4 of 6
0 20 40 60 80 100 120 140
Junction Temperature (°C)
Rev.3.00
Nov 30, 2007
102
7
5
4
3
2
3.0
VD = 12V
Distribution
Typical Example
101
7
5
4
3
2
100
–60 –40 –20
0 20 40 60 80 100 120 140
Junction Temperature (°C)
BCR5AM-12LA
Breakover Voltage vs.
Junction Temperature
T2+, G+
Typical Example
T2–, G–
Distribution
101
7
5
3
2
100
–60 –40 –20
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
T2+, G–
Typical Example
102
7
5
3
2
0 20 40 60 80 100 120 140
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
103
7
5
3
2
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Commutation Characteristics
7
5
4
3
2
160
Typical Example
Tj = 125°C
140
120
100
III Quadrant
80
60
40
I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Gate Trigger Current vs.
Gate Current Pulse Width
Typical Example
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
7
5
4
3
2
Typical Example
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
I Quadrant
Minimum
Characteristics
Value
III Quadrant
100
7 0
10
Rate of Rise of Off-State Voltage (V/µs)
103
7
5
4
3
2
0 20 40 60 80 100120 140
Junction Temperature (°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Latching Current (mA)
Latching Current vs.
Junction Temperature
2 3 4 5 7 101
2 3 4 5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
IRGT III
102
7
5
4
3
2
A
6V
IRGT I
V
Test Procedure I
IFGT I
A
6V
2 3 4 5 7 101
2 3 4 5 7 102
Gate Current Pulse Width (µs)
REJ03G0293-0300
Page 5 of 6
Rev.3.00
Nov 30, 2007
V
V
330Ω
Test Procedure II
6Ω
101 0
10
A
6V
330Ω
330Ω
Test Procedure III
BCR5AM-12LA
Package Dimensions
Package Name
TO-220
JEITA Package Code
SC-46
Previous Code

RENESAS Code
PRSS0004AA-A
MASS[Typ.]
2.0g
10.5Max
Unit: mm
4.5
φ3.6
3.8Max
12.5Min
16Max
7.0
3.2
1.3
1.0
0.8
0.5
2.54
2.6
4.5Max
2.54
Order Code
Lead form
Straight type
Lead form
Standard packing
Vinyl sack
Plastic Magazine (Tube)
Quantity
100
50
Standard order code
Type name
Type name – Lead forming code
Note : Please confirm the specification about the shipping in detail.
REJ03G0293-0300
Page 6 of 6
Rev.3.00
Nov 30, 2007
Standard order
code example
BCR5AM-12LA
BCR5AM-12LA-A8
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