DG611E, DG612E, DG613E www.vishay.com Vishay Siliconix 1.4 pC Charge Injection, 100 pA Leakage, Quad SPST Switches DESCRIPTION FEATURES The DG611E, DG612E, and DG613E contain four independently selectable SPST switches. They offer improved performance over the industry standard DG611 series. The DG611E and DG612E have all switches normally closed and normally open respectively, while the DG613E has 2 normally open and 2 normally closed switches. • Low charge injection (1.4 pC typ.) • • • • They are designed to operate from a 3 V to 12 V single supply or from ± 3 V to ± 5 V dual supplies and are fully specified at +3 V, +5 V and ± 5 V. All control logic inputs have guaranteed 2 V logic high limits when operating from +5 V or ± 5 V supplies and 1.4 V when operating from a +3 V supply. • • • • • • The DG611E, DG612E, and DG613E switches conduct equally well in both directions and offer rail to rail analog signal handling. • 1.4 pC low charge injection, coupled with very low switch capacitance: 3 pF, fast switching speed: ton/toff 23 ns/14 ns and excellent 3 dB bandwidth: 1 GHz, make these products ideal for precision instrumentation, high-end data acquisition, automated test equipment and high speed communication applications. Leakage current < 0.25 nA at 85 °C Low switch capacitance (Csoff 3 pF typ.) Low RDS(on) - 115 max. Fully specified with single supply operation at 3 V, 5 V, and dual supplies at ± 5 V Low voltage, 2.5 V CMOS/TTL compatible 1 GHz, 3 dB bandwidth Excellent isolation performance (-59 dB at 10 MHz) Excellent crosstalk performance (-74 dB at 10 MHz) Fully specified from -40 °C to +85 °C and -40 °C to +125 °C 16 lead SOIC, TSSOP and miniQFN package (1.8 mm x 2.6 mm) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • • • • • • • Operation temperature is specified from -40 °C to +125 °C. The DG611E, DG612E, and DG613E are available in 16 lead SOIC, TSSOP and the space saving 1.8 mm x 2.6 mm miniQFN packages. Precision instrumentation Medical instrumentation Automated test equipment High speed communications applications High-end data acquisition Sample and hold applications Sample and hold systems FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG611E SOIC/TSSOP DG611E miniQFN D1 IN1 IN2 D2 IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V- 4 13 V+ GND 5 12 NC S4 6 11 S3 D4 7 10 D3 IN4 8 9 Top View IN3 16 Txx Pin 1 14 13 S1 1 12 S2 V- 2 11 V+ GND 3 10 NC S4 4 9 S3 5 Device Marking: Txx for DG611E (miniQFN16) Uxx for DG612E Vxx for DG613E xx = Date/Lot Traceability Code 15 6 7 8 D4 IN4 IN3 D3 Top View TRUTH TABLE LOGIC DG611E DG612E 0 On Off 1 Off On S17-0578-Rev. A, 24-Apr-17 Document Number: 78910 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG611E, DG612E, DG613E www.vishay.com Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG613E SOIC/TSSOP DG613E miniQFN D1 IN1 IN2 D2 16 15 14 13 IN1 1 16 IN2 D1 2 15 D2 S1 1 12 S2 S1 3 14 S2 V- 2 11 V+ V- 4 13 V+ GND 3 10 NC S4 4 9 S3 GND 5 12 NC S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 5 6 7 8 D4 IN4 IN3 D3 Top View Top View Vxx Pin 1 Device Marking: Vxx for DG613E (miniQFN16) TRUTH TABLE LOGIC SW1, SW4 0 Off SW2, SW3 On 1 On Off ORDERING INFORMATION TEMP. RANGE PACKAGE PART NUMBER DG611EEQ-T1-GE4 16-pin TSSOP DG612EEQ-T1-GE4 DG613EEQ-T1-GE4 DG611EEY-T1-GE4 -40 °C to +125 °C a 16-pin narrow SOIC DG612EEY-T1-GE4 DG613EEY-T1-GE4 DG611EEN-T1-GE4 16-pin miniQFN DG612EEN-T1-GE4 DG613EEN-T1-GE4 Note a. -40 °C to +85 °C datasheet limits apply S17-0578-Rev. A, 24-Apr-17 Document Number: 78910 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG611E, DG612E, DG613E www.vishay.com Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER LIMIT V+ to VGND to VDigital inputs UNIT 14 7 a, VS, VD Continuous current (any terminal) 30 Peak current, S or D (pulsed 1 ms, 10 % duty cycle) 100 Storage temperature Power dissipation (package) b Thermal resistance (package) b -65 to +150 16-pin TSSOP c 450 16-pin miniQFN d 525 16-pin narrow SOIC e 640 16-pin TSSOP 178 16-pin miniQFN 152 16-pin narrow SOIC 125 ESD / HBM EIA / JESD22-A114-A 2k ESD / CDM EIA / JESD22-C101-A 1k JESD78 300 Latch up V (V-) - 0.3 V to (V+) + 0.3 V or 30 mA, whichever occurs first mA °C mW °C/W V mA Notes a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings b. All leads welded or soldered to PC board c. Derate 5.6 mW/°C above 70 °C d. Derate 6.6 mW/°C above 70 °C e. Derate 8 mW/°C above 70 °C f. Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection S17-0578-Rev. A, 24-Apr-17 Document Number: 78910 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG611E, DG612E, DG613E www.vishay.com Vishay Siliconix SPECIFICATIONS FOR DUAL SUPPLIES (V+ = +5 V, V- = -5 V) TEST CONDITIONS LIMITS UNLESS OTHERWISE SPECIFIED b -40 °C to +125 °C SYMBOL TEMP. V + = +5 V, V - = - 5 V TYP. c d MIN. MAX. d VIN = 2 V, 0.8 V a PARAMETER -40 °C to +85 °C MIN. d UNIT MAX. d Analog Switch Analog signal range e Drain-source On-resistance VANALOG RDS(on) IS = 1 mA, VD = -3 V, 0 V, +3 V On-resistance match RDS(on) IS = 1 mA, VD = ± 3 V On-resistance flatness Rflat(on) IS = 1 mA, VD = -3 V, 0 V, +3 V IS(off) Switch off leakage current ID(off) Switch on leakage current V+ = 5.5 V, V- = -5.5 V VD = +4.5 V / -4.5 V VS = -4.5 V / +4.5 V Full - -5 5 -5 5 Room 72 - 115 - 115 140 Full - - 160 - Room 0.6 - 2.5 - 2.5 Full - - 5 - 4.5 Room 15 - 20 - 20 Full - - 30 - 25 Room ± 0.0005 -0.1 0.1 -0.1 0.1 0.25 Full - -2 2 -0.25 Room ± 0.006 -0.1 0.1 -0.1 0.1 Full - -2 2 -0.25 0.25 ID(on) V+ = 5.5 V, V- = -5.5 V VD = VS = ± 4.5 V Room ± 0.008 -0.1 0.1 -0.1 0.1 Full - -6 6 -0.25 0.25 V nA Digital Control Input current, VIN low IIL VIN under test = 0.8 V Full 0.01 -0.1 0.1 -0.1 0.1 Input current, VIN high IIH VIN under test = 2 V Full 0.01 -0.1 0.1 -0.1 0.1 Input capacitance e CIN f = 1 MHz Room 3 - - - - Room 23 - 50 - 50 Full - - 75 - 60 Room 14 - 35 - 35 Full - - 50 - 45 μA pF Dynamic Characteristics Turn-on time tON Turn-off time tOFF Break-before-make time delay tBBM DG613E only, VS = 3 V RL = 300 , CL = 35 pF Room 15 - - - - Full - 2 - 2 - QINJ Vg = 0 V, Rg = 0 , CL = 1 nF Room 1.4 - - - - Room -59 - - - - Charge injection e RL = 300 , CL = 35 pF VS = ± 3 V Off isolation e OIRR Channel-to-channel crosstalk e XTALK RL = 50 , CL = 5 pF f = 10 MHz Room -74 - - - - BW RL = 50 , CL = 5 pF Room 1 - - - - Room 3 - - - - Room 3 - - - - Bandwidth e Source off capacitance e CS(off) Drain off capacitance e CD(off) Drain on capacitance e CD(on) f = 1 MHz; VS = VD = 0 V Room 7 - - - - Total harmonic distortion e THD Signal = 1 VRMS, 20 Hz to 20 kHz, RL = 600 Room 0.13 - - - - Room 0.001 - 0.1 - 0.1 Full - - 1 - 1 Room -0.001 -0.1 - -0.1 - Full - -1 - -1 - Room -0.001 -0.1 - -0.1 - Full - -1 - -1 - ns pC dB GHz f = 1 MHz; VS = 0 V pF % Power Supplies Power supply current I+ Negative supply current I- Ground current IGND S17-0578-Rev. A, 24-Apr-17 V+ = +5 V, V- = -5 V VIN = 0 V or 5 V μA Document Number: 78910 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG611E, DG612E, DG613E www.vishay.com Vishay Siliconix SPECIFICATIONS FOR SINGLE SUPPLIES (V+ = +5 V, V- = 0 V) TEST CONDITIONS UNLESS OTHERWISE SPECIFIED SYMBOL V+ = +5 V, V- = 0 V VIN = 2 V, 0.8 V a PARAMETER LIMITS TEMP.b TYP.C -40 °C to +125 °C MIN. d MAX. d -40 °C to +85 °C MIN. d UNIT MAX. d Analog Switch Analog signal range e VANALOG Full - 0 5 0 5 130 - 170 - 170 215 RDS(on) V+ = 5 V, V- = 0 V IS = 1 mA, VD = +3.5 V Room Full - - 235 - On-resistance match RDS(on) V+ = 5 V, V- = 0 V, IS = 1 mA, VD = 3.5 V Room 0.6 - 5 - 5 Full - - 12 - 10 On-resistance flatness Rflat(on) V+ = 5 V, V- = 0 V, IS = 1 mA, VD = 0 V, 3.5 V Room 29 - 50 - 50 Full - - 100 - 90 Room ± 0.0005 -0.1 0.1 -0.1 0.1 0.25 Drain-source On-resistance IS(off) Switch off leakage current ID(off) Switch on leakage current V+ = 5.5 V, V- = 0 V VD = 4.5 V / 1 V VS = 1 V / 4.5 V Full - -2 2 -0.25 Room ± 0.006 -0.1 0.1 -0.1 0.1 Full - -2 2 -0.25 0.25 ID(on) V+ = 5.5 V, V- = 0 V VD = VS = 1 V / 4.5 V Room ± 0.008 -0.1 0.1 -0.1 0.1 Full - -6 6 -0.25 0.25 V nA Digital Control Input current, VIN low IIL VIN under test = 0.8 V Full 0.01 -0.1 0.1 -0.1 0.1 Input current, VIN high IIH VIN under test = 2 V Full 0.01 -0.1 0.1 -0.1 0.1 Input capacitance e CIN f = 1 MHz Room 4 - - - - Room 33 - 60 - 60 Full - - 90 - 80 Room 14 - 35 - 35 Full - - 45 - 40 Room 19 - - - - Full - 2 - 2 - μA pF Dynamic Characteristics Turn-on time e tON RL = 300 , CL = 35 pF VS = 3 V Turn-off Time e tOFF Break-before-make time delay e tBBM DG613E only, VS = 3 V RL = 300 , CL = 35 pF QINJ Vg = 0 V, Rg = 0 , CL = 1 nF Full 1.5 - - - - Room -59 - - - - Charge injection e Off isolation e OIRR Channel-to-channel crosstalk e XTALK RL = 50 , CL = 5 pF f = 10 MHz Room -70 - - - - BW RL = 50 , CL = 5 pF Room 880 - - - - Room 3 - - - - Room 3 - - - - Room 7 - - - - Room 0.001 - 0.1 - 0.1 Full - - 1 - 1 Room -0.001 -0.1 - -0.1 - Full - -1 - -1 - Room -0.001 -0.1 - -0.1 - Full - -1 - -1 - Bandwidth e Source off capacitance e CS(off) Drain off capacitance e CD(off) e CD(on) Drain on capacitance f = 1 MHz; VS = 0 V f = 1 MHz; VS = VD = 0 V ns pC dB MHz pF Power Supplies Power supply current I+ Negative supply current I- Ground current IGND S17-0578-Rev. A, 24-Apr-17 VIN = 0 V or 5 V μA Document Number: 78910 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG611E, DG612E, DG613E www.vishay.com Vishay Siliconix SPECIFICATIONS FOR SINGLE SUPPLIES (V+ = +3 V, V- = 0 V) PARAMETER TEST CONDITIONS LIMITS UNLESS OTHERWISE SPECIFIED b -40 °C to +125 °C SYMBOL TEMP. V + = +3 V, V - = - 0 V TYP. c d MIN. MAX. d VIN = 1.4 V, 0.6 V a -40 °C to +85 °C MIN. d UNIT MAX. d Analog Switch Analog signal range e Drain source On-resistance VANALOG RDS(on) IS = 1 mA, VD = +1.5 V IS(off) V+ = 3.3 V, V- = 0 V VD = 3 V / 0.3 V VS = 0.3 V / 3 V Switch off leakage current ID(off) Switch on leakage current Full - 0 3 0 3 V Room 305 - 420 - 420 Full - - 600 - 500 Room ± 0.0005 -0.1 0.1 -0.1 0.1 0.25 Full - -2 2 -0.25 Room ± 0.006 -0.1 0.1 -0.1 0.1 Full - -2 2 -0.25 0.25 ID(on) V+ = 3.3 V, V- = 0 V VD = VS = 0.3 V / 3 V Room ± 0.008 -0.1 0.1 -0.1 0.1 Full - -6 6 -0.25 0.25 nA Digital Control Input current, VIN low IIL VIN under test = 0.6 V Full 0.01 -0.1 0.1 -0.1 0.1 Input current, VIN high IIH VIN under test = 1.4 V Full 0.01 -0.1 0.1 -0.1 0.1 Input capacitance e CIN f = 1 MHz Room 4 - - - - Room 76 - 115 - 115 Full - - 180 - 155 Room 31 - 58 - 58 Full - - 65 - 60 μA pF Dynamic Characteristics Turn-on time tON Turn-off time tOFF Break-before-make time delay tBBM DG613 only, VS = 2 V RL = 300 , CL = 35 pF Room 60 - - - - Full - 10 - 10 - Vg = 0 V, Rg = 0 , CL = 1 nF Room 1.4 - - - - Room -59 - - - - RL = 300 , CL = 35 pF VS = 2 V Charge injection e QINJ Off isolation e OIRR Channel-to-channel crosstalk e XTALK RL = 50 , CL = 5 pF f = 10 MHz Room -71 - - - - BW RL = 50 , CL = 5 pF Room 830 - - - - Room 3 - - - - Bandwidth e Source off capacitance e CS(off) Drain off capacitance e CD(off) Drain on capacitance e CD(on) f = 1 MHz; VS = 0 V f = 1 MHz; VS = VD = 0 V Room 4 - - - - Room 7 - - - - Room 0.001 - 0.1 - 0.1 Full - - 1 - 1 Room -0.001 -0.1 - -0.1 - Full - -1 - -1 - Room -0.001 -0.1 - -0.1 - Full - -1 - -1 - ns pC dB MHz pF Power Supplies Power supply current I+ Negative supply current I- Ground current IGND VIN = 0 V or 3 V μA Notes a. VIN = input voltage to perform proper function b. Room = 25 °C, Full = as determined by the operating temperature suffix c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet e. Guaranteed by design, not subject to production test Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0578-Rev. A, 24-Apr-17 Document Number: 78910 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG611E, DG612E, DG613E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title V± = ± 3 V 350 80 1000 1st line 2nd line 70 60 50 100 40 V± = ± 5 V 30 V+ = +3 V 300 1000 250 V+ = +5 V 200 150 100 V+ = +13.2 V 100 50 20 0 10 10 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 VD - Analog Voltage (V) 2nd line VD - Analog Voltage (V) 2nd line On-Resistance vs. VD (Dual Supply) On-Resistance vs. VD (Single Supply) Axis Title 250 10000 +85 °C 1000 +25 °C 100 V± = ± 5 V IS = 1 mA -5 -4 -3 2nd line RON - On-Resistance (Ω) +125 °C 0 1 2 3 4 +125 °C 190 +85 °C 1000 +25 °C 170 150 130 100 110 90 -40 °C 50 10 -1 210 70 -40 °C -2 10000 V+ = +5 V IS = 1 mA 230 1st line 2nd line 150 140 130 120 110 100 90 80 70 60 50 40 30 20 1st line 2nd line 5 10 0 1 2 3 4 5 VD - Analog Voltage (V) 2nd line VD - Analog Voltage (V) 2nd line On-Resistance vs. Temperature (Dual Supply) On-Resistance vs. Temperature (Single Supply) Axis Title Axis Title 400 380 360 340 320 300 280 260 240 220 200 180 160 140 120 100 2.0 10000 V+ = +3 V IS = 1 mA 1st line 2nd line 1000 100 +85 °C +25 °C 1.6 1.4 10 2 3 V± = ± 5 V 1000 1.2 V+ = +3 V 1.0 0.8 100 0.6 0.4 0.2 -40 °C 1 2nd line QINJ - Charge Injection (pC) +125 °C 0 10000 V+ = +5 V 1.8 1st line 2nd line 2nd line RON - On-Resistance (Ω) Axis Title 2nd line RON - On-Resistance (Ω) 10000 IS = 1 mA 1st line 2nd line IS = 1 mA 90 2nd line RON - On-Resistance (Ω) Axis Title 400 10000 2nd line RON - On-Resistance (Ω) 100 0 CL=1 nF 10 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 VD - Analog Voltage (V) 2nd line VS - Analog Voltage (V) 2nd line On-Resistance vs. Temperature (Single Supply) Charge Injection vs. Analog Voltage S17-0578-Rev. A, 24-Apr-17 6 Document Number: 78910 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG611E, DG612E, DG613E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title IS(OFF), VD = 0.3 V, VS = 3 V 400 IS(OFF), VD = -4.5 V, VS = 4.5 V ID(ON), VD = 3 V 500 IS(OFF), VD = 3 V, VS = 0.3 V ID(OFF), VD = 3 V, VS = 0.3 V 1000 100 0 -100 -200 100 ID(ON), VD = 0.3 V -300 2nd line Leakage Current (pA) 200 ID(OFF), VD = 0.3 V, VS = 3 V -400 V+ = +3.3 V -500 -40 -20 0 40 60 80 300 100 ID(ON), VD = 4.5 V ID(OFF), VD = 4.5 V, VS = -4.5 V -100 100 -300 ID(OFF), VD = -4.5 V, VS = 4.5 V ID(ON), VD = -4.5 V V± = ± 5.5 V -700 100 120 10 -40 -20 0 20 Axis Title 0 ID(ON), VD = 1 V -200 100 ID(OFF), VD = 1 V, VS = 4.5 V -300 -400 V+ = +5.5 V -500 -40 -20 0 40 60 80 V+ = +5 V, tON V± = ± 5 V, tON 40 100 V+ = +5 V, tOFF 20 V± = ± 5 V, tOFF 100 120 10 -50 0 50 Temperature (°C) 2nd line Leakage Current vs. Temperature Switching Time vs. Temperature Axis Title 150 Axis Title 10000 10000 100 1000 200 150 100 100 90 1000 80 100 70 V+ = +5 V VIN = 2.5 V 50 0 10 -40 -20 0 20 40 60 80 100 120 140 1st line 2nd line 250 2nd line I+ - Supply Current (μA) V+ = +5 V VIN = V+ or GND 1st line 2nd line 2nd line I+ - Supply Current (nA) 100 Temperature (°C) 2nd line 350 300 1000 0 10 20 60 1st line 2nd line 1st line 2nd line 2nd line Leakage Current (pA) 1000 2nd line tON(IN), tOFF(IN) - Switching Time (ns) ID(ON), VD = 4.5 V ID(OFF), VD = 4.5 V, VS = 1 V 10000 80 IS(OFF), VD = 4.5 V, VS = 1 V -100 100 120 Leakage Current vs. Temperature IS(OFF), VD = 1 V, VS = 4.5 V 100 80 Leakage Current vs. Temperature 10000 200 60 Temperature (°C) 2nd line Axis Title 300 40 Temperature (°C) 2nd line 500 400 1000 IS(OFF), VD = 4.5 V, VS = -4.5 V -500 10 20 10000 700 1st line 2nd line 2nd line Leakage Current (pA) 300 Axis Title 10000 1st line 2nd line 500 60 10 -40 -20 0 20 40 60 80 100 120 140 Temperature (°C) 2nd line Temperature (°C) 2nd line Supply Current vs. Temperature Supply Current vs. Temperature S17-0578-Rev. A, 24-Apr-17 Document Number: 78910 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG611E, DG612E, DG613E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 1000 10000 100 000 1000 1 1st line 2nd line V+ = +5 V 0.1 V+ = +3 V 0.01 100 0.001 0.0001 1000 100 1 0.1 0.01 10 100 1000 10K 100K 1M 10 10M 0.001 0.00001 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Input Switching Frequency (Hz) 2nd line VIN (V) 2nd line Supply Current vs. Switching Frequency Supply Current vs. Input Voltage Axis Title Axis Title 100 10 1000 1st line 2nd line I+ 1 I- 0.1 0.01 100 IGND 0.001 2nd line Loss, OIRR, XTALK (dB) V+ = +5 V V- = -5 V 1000 0.0001 0.00001 10 1000 100K 10 10M 10 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -130 -140 100K 10000 Loss 1000 1st line 2nd line 10000 10 000 OIRR 100 XTALK V± = ± 5 V 1M 10M 100M 10 1G Input Switching Frequency (Hz) 2nd line Frequency (Hz) 2nd line Supply Current vs. Switching Frequency Insertion Loss, Off-Isolation, Crosstalk vs. Frequency Axis Title 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Axis Title 10000 2.0 10000 -40 C VINH 1st line 2nd line 1000 125 C VINL 100 10 2 3 4 5 6 7 8 9 10 11 12 13 14 2nd line VIN - Switching Threshold (V) 1.8 1.6 -40 °C VINH 1.4 1000 1.2 1.0 1st line 2nd line 2nd line I+, I-, IGND - Supply Current (μA) 100 V+ = 3 V 0.0001 0.00001 2nd line VIN - Switching Threshold (V) 1000 V+ = 5 V 10 1st line 2nd line 10 2nd line I+ - Supply Current (μA) 100 2nd line I+ - Supply Current (μA) 10000 10 000 125 °C VINL 0.8 100 0.6 0.4 0.2 0 10 2 3 4 5 6 7 V+ - Supply Voltage (V), Single Supply 2nd line V± - Supply Voltage (V), Dual Supply 2nd line Switching Threshold vs. Supply Voltage (Single Supply) Switching Threshold vs. Supply Voltage (Dual Supply) S17-0578-Rev. A, 24-Apr-17 Document Number: 78910 9 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG611E, DG612E, DG613E www.vishay.com Vishay Siliconix TEST CIRCUITS +5V tr < 5 ns tf < 5 ns 3V Logic Input 50 % 0V V+ VS S tOFF D Switch Input* VO VS VO IN RL 300 Ω V- GND CL 35 pF 90 % 90 % 0V tON - 5V Note: CL (includes fixture and stray capacitance) Logic input waveform is inverted for switches that have the opposite logic sense control RL VO = V S RL + rDS(on) Fig. 1 - Switching Time +5V 3V Logic Input V+ VS1 S1 D1 VO1 IN1 VS2 Switch Output IN2 RL1 300 Ω V- GND 90 % VO2 D2 S2 50 % 0V VS1 VO1 RL2 300 Ω CL1 35 pF CL2 35 pF 0V VS2 VO2 0V Switch Output 90 % tD tD -5V CL (includes fixture and stray capacitance) Fig. 2 - Break-Before-Make (DG613E) ΔVO +5V Rg INX V+ S ON OFF VO CL 1 nF 3V GND OFF D IN Vg VO V- INX OFF ON Q = ΔVO x CL OFF -5V Fig. 3 - Charge Injection S17-0578-Rev. A, 24-Apr-17 Document Number: 78910 10 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG611E, DG612E, DG613E www.vishay.com Vishay Siliconix TEST CIRCUITS +5V C V+ D1 S1 VS Rg = 50 Ω 50 Ω IN1 0 V, 2.4 V S2 D2 VO NC RL IN2 0 V, 2.4 V GND V- C VO XTALK Isolation = 20 log -5V VS C = RF bypass Fig. 4 - Crosstalk +5V +5V C C V+ VO D S VS V+ S Rg = 50 Ω 0 V, 2.4 V RL 50 Ω IN Meter IN GND V- C HP4192A Impedance Analyzer or Equivalent 0 V, 2.4 V D GND -5V Off Isolation = 20 log V- C VO VS -5V C = RF Bypass Fig. 5 - Off-Isolation Fig. 6 - Source / Drain Capacitances Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?78910. S17-0578-Rev. A, 24-Apr-17 Document Number: 78910 11 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Thin miniQFN16 Case Outline B 12 0.10 C Terminal tip (4) 16 x b D A 11 9 9 10 10 11 0.10 M C A B 0.05 M C 12 13 8 8 13 14 7 7 14 6 6 15 5 5 E 15 16 1 2 3 4 16 4 Pin #1 identifier (5) 15 x L 0.10 C Top view 3 2 L1 1 e Bottom view 0.10 C C A Seating plane 0.10 C A3 Side view DIMENSIONS MILLIMETERS (1) INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.50 0.55 0.60 0.020 0.022 0.024 A1 0 - 0.05 0 - 0.002 A3 0.15 ref. b 0.15 D 2.50 e 0.006 ref. 0.20 0.25 0.006 2.60 2.70 0.098 0.40 BSC E 1.70 1.80 0.008 0.010 0.102 0.106 0.016 BSC 1.90 0.067 0.071 0.075 L 0.35 0.40 0.45 0.014 0.016 0.018 L1 0.45 0.50 0.55 0.018 0.020 0.022 N (3) 16 16 Nd (3) 4 4 (3) 4 4 Ne Notes (1) Use millimeters as the primary measurement. (2) Dimensioning and tolerances conform to ASME Y14.5M. - 1994. (3) N is the number of terminals. Nd and Ne is the number of terminals in each D and E site respectively. (4) Dimensions b applies to plated terminal and is measured between 0.15 mm and 0.30 mm from terminal tip. (5) The pin 1 identifier must be existed on the top surface of the package by using identification mark or other feature of package body. (6) Package warpage max. 0.05 mm. ECN: T16-0226-Rev. B, 09-May-16 DWG: 6023 Revision: 09-May-16 Document Number: 64694 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 16ĆLEAD JEDEC Part Number: MS-012 MILLIMETERS 16 15 14 13 12 11 10 Dim A A1 B C D E e H L Ĭ 9 E 1 2 3 4 5 6 7 8 INCHES Min Max Min Max 1.35 1.75 0.053 0.069 0.10 0.20 0.004 0.008 0.38 0.51 0.015 0.020 0.18 0.23 0.007 0.009 9.80 10.00 0.385 0.393 3.80 4.00 0.149 0.157 1.27 BSC 0.050 BSC 5.80 6.20 0.228 0.244 0.50 0.93 0.020 0.037 0_ 8_ 0_ 8_ ECN: S-03946—Rev. F, 09-Jul-01 DWG: 5300 H D C All Leads e Document Number: 71194 02-Jul-01 B A1 L Ĭ 0.101 mm 0.004 IN www.vishay.com 1 Package Information Vishay Siliconix TSSOP: 16-LEAD DIMENSIONS IN MILLIMETERS Symbols Min Nom Max A - 1.10 1.20 A1 0.05 0.10 0.15 A2 - 1.00 1.05 0.38 B 0.22 0.28 C - 0.127 - D 4.90 5.00 5.10 E 6.10 6.40 6.70 E1 4.30 4.40 4.50 e - 0.65 - L 0.50 0.60 0.70 L1 0.90 1.00 1.10 y - - 0.10 θ1 0° 3° 6° ECN: S-61920-Rev. D, 23-Oct-06 DWG: 5624 Document Number: 74417 23-Oct-06 www.vishay.com 1 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR TSSOP-16 0.193 (4.90) 0.171 0.014 0.026 0.012 (0.35) (0.65) (0.30) (4.35) (7.15) 0.281 0.055 (1.40) Recommended Minimum Pads Dimensions in inches (mm) Revision: 02-Sep-11 1 Document Number: 63550 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PADS FOR MINI QFN 16L 0.562 (0.0221) 0.400 (0.0157) 0.225 (0.0089) 1 2.900 (0.1142) 0.463 (0.0182) 1.200 (0.0472) 2.100 (0.0827) Mounting Footprint Dimensions in mm (inch) Document Number: 66557 Revision: 05-Mar-10 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-16 RECOMMENDED MINIMUM PADS FOR SO-16 0.372 (9.449) 0.152 0.022 0.050 0.028 (0.559) (1.270) (0.711) (3.861) 0.246 (6.248) 0.047 (1.194) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 24 Document Number: 72608 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000