Diodes DMT3002LPS 30v n-channel enhancement mode mosfet Datasheet

DMT3002LPS
Green
30V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8 (Type K)
Product Summary
Features
BVDSS
RDS(ON)
ID
TC = +25°C
30V
1.6mΩ @ VGS = 10V
240A
Description
This new generation N-Channel Enhancement Mode MOSFET is
designed to minimize RDS(ON), yet maintain superior switching
performance. This device is ideal for use in power management and
load switch.
Thermally Efficient Package – Cooler Running Applications
<1.1mm Package Profile – Ideal for Thin Applications
High Conversion Efficiency
Low RDS(ON) – Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Applications
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
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
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
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DC-DC Converters
Load Switch

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®
Case: PowerDI 5060-8 (Type K)
Case Material: Molded Plastic, ―Green‖ Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
PowerDI5060-8 (Type K)
S
D
S
D
S
D
G
D
Pin1
Bottom View
Top View
Internal Schematic
Top View
Pin Configuration
Ordering Information (Note 4)
Part Number
DMT3002LPS-13
Notes:
Case
PowerDI5060-8 (Type K)
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
PowerDI5060-8 (Type K)
D
D
D
D
= Manufacturer’s Marking
T3002LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 17 = 2017)
WW = Week Code (01 to 53)
T3002LS
YY WW
S
S
S
G
PowerDI is a registered trademark of Diodes Incorporated.
DMT3002LPS
Document number: DS38283 Rev. 5 - 2
1 of 7
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April 2017
© Diodes Incorporated
DMT3002LPS
Maximum Ratings (@TC = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Steady
TC = +25°C
State
TC = +70°C
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Pulsed Continuous Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%)
Avalanche Current, L=3mH (Note 8)
Avalanche Energy, L=3mH (Note 8)
Continuous Drain Current, VGS = 10V (Note 7)
Value
30
±16
240
240
100
400
400
15
700
ID
IS
IDM
ISM
IAS
EAS
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@TC = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Electrical Characteristics
TA = +25°C
Steady State
TA = +25°C
Steady State
TC = +25°C
Symbol
PD
RθJA
PD
RθJA
PD
RθJC
TJ, TSTG
Value
1.2
103
2.5
51
136
1.1
-55 to +150
Unit
W
°C/W
W
°C/W
W
°C/W
°C
(@TC = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
30
—
—
—
—
—
—
1
±100
V
μA
nA
VGS = 0V, ID = 250μA
VDS = 24V, VGS = 0V
VGS = ±16V, VDS = 0V
VGS(TH)
RDS(ON)
VSD
—
1.25
2
0.8
2
1.6
2.5
1.1
V
Static Drain-Source On-Resistance
1
—
—
—
VDS = VGS, ID = 1mA
VGS = 10V, ID = 25A
VGS = 4.5V, ID = 25A
VGS = 0V, IS = 25A
CISS
COSS
CRSS
RG
QG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
QRR
—
5,000
2,660
300
0.75
37
77
10
14
21
45
32
26
44
52
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
—
mΩ
V
Test Condition
pF
VDS = 15V, VGS = 0V,
f = 1MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
nC
VDS = 15V, ID = 25A
ns
VDD = 15V, VGS = 4.5V,
ID = 25A, RG = 4.7Ω
ns
nC
IS = 15A, di/dt = 100A/μs
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
DMT3002LPS
Document number: DS38283 Rev. 5 - 2
2 of 7
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April 2017
© Diodes Incorporated
DMT3002LPS
100.0
30
VGS = 10.0V
80.0
25
VGS = 4.0V
VGS = 3.5V
60.0
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VDS = 5.0V
VGS = 4.5V
VGS = 3.0V
40.0
VGS = 2.5V
20.0
20
15
125℃
10
85℃
150℃
5
VGS = 2.2V
-55℃
0
0.0
0
0.5
1
1.5
2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
1
3
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ)
4.00
3.00
VGS = 4.5V
2.00
VGS = 10V
1.00
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
3
Figure 2. Typical Transfer Characteristic
Figure 1. Typical Output Characteristic
0.00
10
8
6
4
ID = 25A
2
0
0
0
20
40
60
80
100
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
4
8
12
16
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
20
1.8
0.003
VGS = 10V
0.0025
150℃
125℃
0.002
85℃
0.0015
25℃
0.001
-55℃
0.0005
0
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
25℃
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
DMT3002LPS
Document number: DS38283 Rev. 5 - 2
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1.6
VGS = 10V, ID = 25A
1.4
1.2
VGS = 4.5V, ID = 25A
1
0.8
0.6
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
April 2017
© Diodes Incorporated
0.004
2
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
DMT3002LPS
0.0035
0.003
VGS = 4.5V, ID = 25A
0.0025
0.002
0.0015
0.001
VGS = 10V, ID = 25A
0.0005
0
1.8
1.6
ID = 1mA
1.4
1.2
ID = 250μA
1
0.8
0.6
0.4
0.2
-50
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
10000
30
f=1MHz
IS, SOURCE CURRENT (A)
25
CT, JUNCTION CAPACITANCE (pF)
VGS = 0V
20
15
TA = 85oC
10
TA = 125oC
TA = 25oC
5
TA = 150oC
Ciss
Coss
1000
Crss
TA = -55oC
0
100
0
0.2
0.4
0.6
0.8
1
VSD, SOURCE-DRAIN VOLTAGE (V)
1.2
0
5
Figure 9. Diode Forward Voltage vs. Current
15
20
25
30
1000
10
RDS(ON) LIMITED
100
8
PW =1µs
ID, DRAIN CURRENT (A)
VGS (V)
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
6
4
VDS = 15V, ID = 25A
2
10 Plz
0
20
40
Qg (nC)
60
80
Figure 11. Gate Charge
DMT3002LPS
Document number: DS38283 Rev. 5 - 2
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W
PW =1ms
PW =10ms
1
TJ(MAX)=150℃
TC=25℃
Single Pulse
DUT on infinite
heatsink
VGS=10V
0.1
0.01
0
P =10µs
help addWnew
SOA plot
P =100µs
0.1
PW =100ms
PW =1s
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
April 2017
© Diodes Incorporated
DMT3002LPS
r(t), TRANSIENT THERMAL RESISTANCE
1
D=0.7
D=0.5
D=0.9
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
RθJC(t) = r(t) * RθJC
RθJC = 1.1℃/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
1E-06
DMT3002LPS
Document number: DS38283 Rev. 5 - 2
1E-05
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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10
100
1000
April 2017
© Diodes Incorporated
DMT3002LPS
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI5060-8 (Type K)
D
D1
0(4x)
c
x
E1
A1
E
Seating Plane
y
e
C
1
Ø 1.000 Depth 0.07± 0.030
b1(8x)
b(8x)
01(4x)
DETAIL A
e/2
1
L
D2
E2
k
b2(2x)
L4
A
M
DETAIL A
La
PowerDI5060-8
(Type K)
Dim
Min
Max
Typ
A
0.90
1.10 1.00
A1
0
0.05 0.02
b
0.33
0.51 0.41
b1
0.300 0.366 0.333
b2
0.20
0.35 0.25
c
0.23
0.33 0.277
D
5.15 BSC
D1
4.85
4.95 4.90
D2
3.98
E
6.15 BSC
E1
5.75
5.85 5.80
E2
3.56 3.725 3.66
E
1.27BSC
k
1.27
L
0.51
0.71 0.61
La
0.51 0.675 0.61
L1
0.05
0.20 0.175
L4
0.125
M
3.50
3.71 3.605
x
1.400
y
1.900
θ
10°
12°
11°
θ1
6°
8°
7°
All Dimensions in mm
L1
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI5060-8 (Type K)
Dimensions
X2
Y1
Y2
Y3
X1
G1
Y
DMT3002LPS
Document number: DS38283 Rev. 5 - 2
C
C
G
G1
X
X1
X2
Y
Y1
Y2
Y3
Value
(in mm)
1.270
0.660
0.820
0.610
3.910
4.420
1.270
1.020
3.810
6.610
X (8x)
G
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© Diodes Incorporated
DMT3002LPS
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Copyright © 2017, Diodes Incorporated
www.diodes.com
DMT3002LPS
Document number: DS38283 Rev. 5 - 2
7 of 7
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April 2017
© Diodes Incorporated