Z ibo Seno Electronic Engineering Co., Ltd. DB251S – DB257 S 2.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Surge Current Capability Designed for Surface Mount Application Plastic Material – UL Recognition Flammability Classification 94V-O G + ~ ~ B A D E C L DB-S Dim Min Max A 7.40 7.90 B 6.20 6.50 C — 0.25 D 0.33 0.08 E 9.30 10.30 G 1.02 1.53 H 8.00 8.51 J 2.15 3.40 K 5.00 5.20 L 1.20 0.90 All Dimensions in mm H Mechanical Data ! J Case: DB -S, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: As Marked on Case Weight: 0.38 grams (approx.) Mounting Position: Any Marking: Type Number Lead Free: For RoHS / Lead Free Version K Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TA = 40°C Symbol DB 251S DB 252S DB 253S DB 254S DB 255S DB 256S DB 257 S Unit VRRM VRWM VR 50 100 200 400 600 800 1000 V VR(RMS) 35 70 140 280 420 560 700 V IO 2.5 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 60 A Forward Voltage per element @IF = 2.5A VFM 1.1 V @TA = 25°C @TA = 125°C IRM 5.0 500 µA Cj 25 pF Typical Thermal Resistance per leg (Note 2) RθJA RθJL 40 15 °C/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Peak Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance per element (Note 1) Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 2. Mounted on PC board with 13mm2 copper pad. DB251S - DB257S 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. DB251S – DB257 S 2.5 10 IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FORWARD CURRENT (A) 60 Hz Resistive or Inductive load 2.0 1.5 1.0 Tj = 25°C Pulse Width = 300µs 2% duty cycle 1.0 0.1 0.01 0 40 60 100 80 120 140 0.4 0.8 0.6 1.0 1.4 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typ Forward Characteristics (per element) 60 100 Tj = 25°c f = 1.0 Mhz Vsig = 50 mV p-p Single half-sine-Wave (JEDEC M ethod) 50 CJ, CAPACITANCE (pF) IFSM , PEAK FORWARD SURGE CURRENT (A) TA, AMBIENT TEMPERATURE (°C) Fig. 1 Output Current Derating Curve 40 30 20 10 10 0 1 1 10 1 100 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typ Junction Capacitance (per element) NUM BER OF CYCLES AT 60 Hz Fig. 3 M ax Non-Repetitive Peak Forward Surge Current IR, INSTANTANEOUS REVERSE CURRENT (µA) 100 Tj = 125°C 10 1.0 Tj = 25°C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typ Reverse Characteristics (per element) DB251S - DB257S 2 of 2 www.senocn.com Alldatasheet