DMP4010SK3Q Green P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(ON) Max -40V 9.9m @ VGS = -10V 14m @ VGS = -4.5V Features and Benefits ID TC = +25°C -50A -45A NEW PRODUCT Description 100% Unclamped Inductive Switch (UIS) Test in Production Low On-Resistance Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Applications DC-DC Converters Power Management Functions Backlighting Case: TO252 Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.33 grams (Approximate) TO252 D D G D G S Top View Pin-Out Top View S Equivalent Circuit Ordering Information (Note 5) Notes: Part Number Case Packaging DMP4010SK3Q-13 TO252 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information = Manufacturer’s Marking . P4010S = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 15 = 2015) WW = Week (01 to 53) P4010S YYWW DMP4010SK3Q Document number: DS38124 Rev. 1 - 2 1 of 7 www.diodes.com October 2015 © Diodes Incorporated DMP4010SK3Q Maximum Ratings (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT Continuous Drain Current (Note 7), VGS = -10V TC = +25°C TC = +70°C TA = +25°C TA = +70°C Steady State Steady State Value -40 ±25 -50 -40 ID A -15 -12 -100 -5.5 -22 260 ID Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Maximum Body Diode Forward Current (Note 7) Avalanche Current, L = 1mH (Note 8) Avalanche Energy, L = 1mH (Note 8) Unit V V IDM IS IAS EAS A A A A mJ Thermal Characteristics (@ TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Case Operating and Storage Temperature Range Symbol PD RθJA PD RθJA RθJC TJ, TSTG Steady State Steady State Value 1.7 73 3.3 38 1.0 -55 to +150 Unit W °C/W W °C/W °C Electrical Characteristics (@ TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -40 — — — — — — -1 ±100 V µA nA VGS = 0V, ID = -250µA VDS = -40V, VGS = 0V VGS = ±25V, VDS = 0V VGS(TH) RDS(ON) VSD -2 7.5 10.5 -0.7 -2.5 9.9 14 -1 V Static Drain-Source On-Resistance -1.5 — — — VDS = VGS, ID = -250µA VGS = -10V, ID = -9.8A VGS = -4.5V, ID = -9.8A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — — 4234 1036 526 7.8 42.7 91 14.2 13.5 13.2 10 303 138 26 20 — — — — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = -20V, VGS = 0V f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = -20V, ID = -9.8A ns VGS = -10V, VDD = -20V, RG = 6Ω, ID = -1A ns nC IF = -9.8A, di/dt = -100A/µs IF = -9.8A, di/dt = -100A/µs 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. DMP4010SK3Q Document number: DS38124 Rev. 1 - 2 2 of 7 www.diodes.com October 2015 © Diodes Incorporated DMP4010SK3Q 30.0 20 VGS = -10.0V VGS = -5.0V VGS =-4.5V VGS =-4.0V ID, DRAIN CURRENT (A) 20.0 VDS= -5.0V VGS =-3.5V 15.0 VGS=-3.0V 10.0 5.0 16 12 TA =150℃ 8 TA =85℃ TA =125℃ TA = 25℃ 4 TA = -55℃ VGS=-2.5V 0 0.0 0.4 0.8 1.2 1.6 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0.012 VGS = -4.5V 0.008 VGS = -10V 0.006 0.004 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) 0.03 0.025 0.02 0.015 0.01 ID = -9.8A 0.005 0 30 0 Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.018 TA =150℃ VGS=-4.5V 0.016 TA =125℃ TA =85℃ 0.014 0.012 TA =25℃ 0.01 0.008 TA =-55℃ 0.006 0 5 10 15 20 25 30 ID, DRAIN CURRENT(A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMP4010SK3Q Document number: DS38124 Rev. 1 - 2 4 Figure 2.Typical Transfer Characteristic 0.014 0.010 1 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT ID, DRAIN CURRENT (A) 25.0 3 of 7 www.diodes.com 5 10 15 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4.Typical Transfer Characteristic 25 1.8 VGS=-10V, ID = -9.8A 1.6 1.4 1.2 VGS=-4.5V, ID = -9.8A 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6.On-Resistance Variation with Temperature October 2015 © Diodes Incorporated DMP4010SK3Q VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 2.2 0.018 0.016 2 ID = -1mA 1.8 0.014 VGS=-4.5V, ID = -9.8A 0.012 ID = -250μA 1.6 0.01 1.4 0.008 VGS=-10V, ID = -9.8A 1.2 0.006 0.004 1 -50 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7.On-Resistance Variation with Temperature 30 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure.8 Gate Threshold Variation vs. Junction Temperature 10000 f=1MHz IS, SOURCE CURRENT (A) CT, JUNCTION CAPACITANCE (pF) Ciss 25 VGS = 0V 20 15 TA = 85oC TA = 125oC TA = 25oC TA = 150oC 10 TA = -55oC 5 Coss 1000 Crss 100 0 VSD, SOURCE-DRAIN VOLTAGE (V) 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 . Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance 0 0.3 0.6 0.9 1.2 0 1.5 10 30 1000 8 PW =1µs PW =10µs RDS(ON) Limited 100 VDS = -20V, ID = -9.8A ID, DRAIN CURRENT (A) VGS (V) NEW PRODUCT 0.02 6 4 2 PW =1ms 1 0.1 0 PW =100µs 10 PW =10ms TJ(Max) = 150℃ TA= 25℃ Single Pulse DUT on Infinite Heatsink VGS= -10V PW =100ms DC 0.01 0 20 40 60 80 100 120 0.1 Qg (nC) Figure 11.Gate Charge DMP4010SK3Q Document number: DS38124 Rev. 1 - 2 4 of 7 www.diodes.com 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 October 2015 © Diodes Incorporated DMP4010SK3Q r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D=0.9 D=0.5 D=0.7 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 RθJA(t) = r(t) * RθJA RθJA= 2.72℃/W Duty Cycle, D = t1 / t2 D=0.005 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMP4010SK3Q Document number: DS38124 Rev. 1 - 2 5 of 7 www.diodes.com October 2015 © Diodes Incorporated DMP4010SK3Q Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. TO252 (DPAK) E A b3 7° ± 1° c NEW PRODUCT L3 D A2 L4 e H b(3x) b2(2x) Gauge Plane 0.508 D1 E1 Seating Plane a L TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° All Dimensions in mm A1 2.74REF Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. TO252 (DPAK) X1 Dimensions C X X1 Y Y1 Y2 Y1 Y2 C Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 Y X DMP4010SK3Q Document number: DS38124 Rev. 1 - 2 6 of 7 www.diodes.com October 2015 © Diodes Incorporated DMP4010SK3Q IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com DMP4010SK3Q Document number: DS38124 Rev. 1 - 2 7 of 7 www.diodes.com October 2015 © Diodes Incorporated