DMN2046U N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits ID max TA = +25°C RDS(ON) max 72mΩ @ VGS = 4.5V 3.4A 110mΩ @ VGS = 2.5V 2.7A 20V Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD protected gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it Case: SOT23 ideal for high-efficiency power management applications. Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Battery Charging Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions DC-DC Converters Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Portable Power Adaptors Terminals Connections: See Diagram Below Weight: 0.008 grams (Approximate) D SOT23 D G S G ESD PROTECTED Gate Protection Diode Top View Pin Configuration Top View S Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMN2046U-7 Case SOT23 Packaging 3,000/Tape & Reel DMN2046U-13 SOT23 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT23 Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb 2 DMN2046U Document number: DS37649 Rev. 2 - 2 Mar 3 YM 46U 46U = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: B = 2014) M = Month (ex: 9 = September) 2016 D Apr 4 2017 E May 5 Jun 6 1 of 6 www.diodes.com 2018 F Jul 7 2019 G Aug 8 Sep 9 2020 H Oct O 2021 I Nov N Dec D February 2015 © Diodes Incorporated DMN2046U Maximum Ratings (@TA = +25°C unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Units V V IDM Value 20 ±12 3.4 2.7 18 Symbol PD RθJA PD RθJA TJ, TSTG Value 0.76 166 1.26 100 -55 to +150 Unit W °C/W W °C/W °C TA = +25°C Steady State TA = +70°C Pulsed Drain Current (Pulse width ≤10µS, Duty Cycle ≤1%) Continuous Drain Current (Note 6) VGS = 10V ID A A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Electrical Characteristics @TA = +25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - 1.0 ±10 V μA μA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±10V, VDS = 0V VGS(th) 0.4 - V Static Drain-Source On-Resistance RDS (ON) - - mΩ VSD - - 1.4 72 110 1.2 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 3.6A VGS = 2.5V, ID = 3.1A VGS = 0V, IS = 0.94A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr - 292 36 32 63 3.8 0.5 0.8 6.7 25.1 69.1 34.1 18.2 3.6 - pF pF pF Ω nC nC nC ns ns ns ns ns nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: V Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 10V, ID = 5.1A VDD = 10V, VGS = 4.5V, RL = 2.4Ω, RG = 6Ω IF = 4.1A, di/dt = 100A/μs IF = 4.1A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN2046U Document number: DS37649 Rev. 2 - 2 2 of 6 www.diodes.com February 2015 © Diodes Incorporated DMN2046U 20 10 VGS = 3.5V VGS = 3.0V 18 14 VGS = 4.5V 12 VGS = 10V 8 ID, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 16 VDS = 5.0V VGS = 2.5V VGS = 4.0V VGS = 2.0V 10 8 6 VGS = 1.5V 4 6 TA = 150°C 4 TA = 125°C T A = 85°C 2 T A = 25°C 2 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 V DS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 2 0.1 0.09 0.08 0.07 VGS = 2.5V 0.06 0.05 0.04 0 0 VGS = 4.5V 0.03 0.02 0.01 3 4 5 6 7 8 9 10 11 12 13 14 15 ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 0 0 1 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) T A = -55°C VGS = 1.2V 0.08 0.07 0.06 0.05 ID = 3.9A 0.04 I D = 3.3A 0.03 0.02 0.01 0 0 2 4 6 8 10 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 12 2 VGS = 4.5V 0.08 0.07 T A = 150°C 0.06 TA = 125°C 0.05 T A = 85°C 0.04 T A = 25°C 0.03 TA = -55°C 0.02 0.01 0 0 2.5 0.09 0.1 0.09 0.5 1 1.5 2 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 0.1 2 4 6 8 R DS(ON), DRAIN-SOURCE O N-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 0 10 Document number: DS37649 Rev. 2 - 2 VGS = 2.5V I D = 5A VGS = 4.5V ID = 5A 1.2 0.8 0.4 -50 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature ID, DRAIN SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMN2046U 1.6 3 of 6 www.diodes.com -25 February 2015 © Diodes Incorporated DMN2046U 1.2 VGS(TH ), GATE THRESHOLD VOLTAGE (V) R DS(o n), DRAIN-SOURCE ON-RESISTANCE () 0.1 0.09 VGS = 2.5V 0.08 I D = 5A 0.07 0.06 0.05 VGS = 4.5V I D = 5A 0.04 0.03 0.02 0.01 1 0.8 I D = 1mA 0.6 I D = 250µA 0.4 0.2 0 -50 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 1000 10 8 CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) f = 1MHz T A= 150°C T A= 125°C 6 4 T A= 85°C T A= 25°C 2 T A= -55°C 0 0 0.3 0.6 0.9 1.2 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 100 Coss C rss 10 0 1.5 4 6 8 10 12 14 16 18 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 20 R DS(on) Limited 4 ID, DRAIN CURRENT (A) 3.5 VDS = 10V 3 I D = 5.1A 2.5 2 1.5 1 10 DC 1 PW = 10s PW = 1s PW = 100ms 0.1 TJ(m ax) = 150°C PW = 10ms TA = 25°C V GS = 10V Single Pulse 0.01 DUT on 1 * MRP Board 0.5 0 0 2 100 4.5 V GS GATE THRESHOLD VOLTAGE (V) Ciss 0.5 1 1.5 2 2.5 3 3.5 Qg , TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMN2046U Document number: DS37649 Rev. 2 - 2 4 4 of 6 www.diodes.com 0.1 PW = 1ms PW = 100µs 1 10 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 February 2015 © Diodes Incorporated DMN2046U r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 Rthja(t) = r(t) * R thja D = 0.005 Rthja = 66°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. All 7° H K1 GAUGE PLANE 0.25 J K SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8° All Dimensions in mm a M A L C L1 B D F G Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X DMN2046U Document number: DS37649 Rev. 2 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com February 2015 © Diodes Incorporated DMN2046U IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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