Diodes DMN2046U-7 Low on-resistance Datasheet

DMN2046U
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
Features and Benefits
ID max
TA = +25°C
RDS(ON) max
72mΩ @ VGS = 4.5V
3.4A
110mΩ @ VGS = 2.5V
2.7A
20V

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage



ESD protected gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it

Case: SOT23
ideal for high-efficiency power management applications.


Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Battery Charging


Moisture Sensitivity: Level 1 per J-STD-020
Power Management Functions


DC-DC Converters
Terminals: Finish  Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208

Portable Power Adaptors

Terminals Connections: See Diagram Below

Weight: 0.008 grams (Approximate)
D
SOT23
D
G
S
G
ESD PROTECTED
Gate Protection
Diode
Top View
Pin Configuration
Top View
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN2046U-7
Case
SOT23
Packaging
3,000/Tape & Reel
DMN2046U-13
SOT23
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT23
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
2015
C
Feb
2
DMN2046U
Document number: DS37649 Rev. 2 - 2
Mar
3
YM
46U
46U = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
2016
D
Apr
4
2017
E
May
5
Jun
6
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2018
F
Jul
7
2019
G
Aug
8
Sep
9
2020
H
Oct
O
2021
I
Nov
N
Dec
D
February 2015
© Diodes Incorporated
DMN2046U
Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Units
V
V
IDM
Value
20
±12
3.4
2.7
18
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
0.76
166
1.26
100
-55 to +150
Unit
W
°C/W
W
°C/W
°C
TA = +25°C
Steady
State
TA = +70°C
Pulsed Drain Current (Pulse width ≤10µS, Duty Cycle ≤1%)
Continuous Drain Current (Note 6) VGS = 10V
ID
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Electrical Characteristics
@TA = +25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
-
-
1.0
±10
V
μA
μA
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±10V, VDS = 0V
VGS(th)
0.4
-
V
Static Drain-Source On-Resistance
RDS (ON)
-
-
mΩ
VSD
-
-
1.4
72
110
1.2
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 3.6A
VGS = 2.5V, ID = 3.1A
VGS = 0V, IS = 0.94A
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
-
292
36
32
63
3.8
0.5
0.8
6.7
25.1
69.1
34.1
18.2
3.6
-
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
V
Test Condition
VDS = 10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 4.5V, VDS = 10V, ID =
5.1A
VDD = 10V, VGS = 4.5V,
RL = 2.4Ω, RG = 6Ω
IF = 4.1A, di/dt = 100A/μs
IF = 4.1A, di/dt = 100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN2046U
Document number: DS37649 Rev. 2 - 2
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February 2015
© Diodes Incorporated
DMN2046U
20
10
VGS = 3.5V
VGS = 3.0V
18
14
VGS = 4.5V
12
VGS = 10V
8
ID, DRAIN CURRENT (A)
ID , DRAIN CURRENT (A)
16
VDS = 5.0V
VGS = 2.5V
VGS = 4.0V
VGS = 2.0V
10
8
6
VGS = 1.5V
4
6
TA = 150°C
4
TA = 125°C
T A = 85°C
2
T A = 25°C
2
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V DS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
2
0.1
0.09
0.08
0.07
VGS = 2.5V
0.06
0.05
0.04
0
0
VGS = 4.5V
0.03
0.02
0.01
3 4 5 6 7 8 9 10 11 12 13 14 15
ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
0
0
1 2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
T A = -55°C
VGS = 1.2V
0.08
0.07
0.06
0.05
ID = 3.9A
0.04
I D = 3.3A
0.03
0.02
0.01
0
0
2
4
6
8
10
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
12
2
VGS = 4.5V
0.08
0.07
T A = 150°C
0.06
TA = 125°C
0.05
T A = 85°C
0.04
T A = 25°C
0.03
TA = -55°C
0.02
0.01
0
0
2.5
0.09
0.1
0.09
0.5
1
1.5
2
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.1
2
4
6
8
R DS(ON), DRAIN-SOURCE
O N-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
0
10
Document number: DS37649 Rev. 2 - 2
VGS = 2.5V
I D = 5A
VGS = 4.5V
ID = 5A
1.2
0.8
0.4
-50
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
ID, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
DMN2046U
1.6
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DMN2046U
1.2
VGS(TH ), GATE THRESHOLD VOLTAGE (V)
R DS(o n), DRAIN-SOURCE ON-RESISTANCE ()
0.1
0.09
VGS = 2.5V
0.08
I D = 5A
0.07
0.06
0.05
VGS = 4.5V
I D = 5A
0.04
0.03
0.02
0.01
1
0.8
I D = 1mA
0.6
I D = 250µA
0.4
0.2
0
-50
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
1000
10
8
CT, JUNCTION CAPACITANCE (pF)
IS, SOURCE CURRENT (A)
f = 1MHz
T A= 150°C
T A= 125°C
6
4
T A= 85°C
T A= 25°C
2
T A= -55°C
0
0
0.3
0.6
0.9
1.2
V SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
100
Coss
C rss
10
0
1.5
4
6
8 10 12 14 16 18
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
20
R DS(on)
Limited
4
ID, DRAIN CURRENT (A)
3.5
VDS = 10V
3
I D = 5.1A
2.5
2
1.5
1
10
DC
1
PW = 10s
PW = 1s
PW = 100ms
0.1 TJ(m ax) = 150°C
PW = 10ms
TA = 25°C
V GS = 10V
Single Pulse
0.01 DUT on 1 * MRP Board
0.5
0
0
2
100
4.5
V GS GATE THRESHOLD VOLTAGE (V)
Ciss
0.5
1
1.5
2
2.5
3
3.5
Qg , TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMN2046U
Document number: DS37649 Rev. 2 - 2
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0.1
PW = 1ms
PW = 100µs
1
10
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
February 2015
© Diodes Incorporated
DMN2046U
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1 D =
0.1
D = 0.05
D = 0.02
0.01
D = 0.01
Rthja(t) = r(t) * R thja
D = 0.005
Rthja = 66°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
100
1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
All 7°
H
K1
GAUGE PLANE
0.25
J
K
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
8°
All Dimensions in mm
a
M
A
L
C
L1
B
D
F
G
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
X
DMN2046U
Document number: DS37649 Rev. 2 - 2
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
E
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DMN2046U
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Document number: DS37649 Rev. 2 - 2
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