ACE5022AE Dual N-Channel Enhancement Mode MOSFET Description The ACE5022AE is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss and resistance to transients are needed. Features N-Channel 20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-563 (SC-89-6L) package design Application Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Symbol VDSS VGSS TA=25℃ TA=80℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range ID IDM IS TA=25℃ TA=70℃ PD TJ TSTG Max 20 ±12 0.65 0.45 1.0 0.3 0.35 0.19 -55/150 -55/150 Unit V V A A A W O O C C VER 1.1 1 ACE5022AE Dual N-Channel Enhancement Mode MOSFET Packaging Type SOT-563 Pin Description Pin Symbol Description 1 S1 Source 1 2 G1 Gate 1 3 D2 Drain 2 4 S2 Source 2 5 G2 Gate 2 6 D1 Drain1 Ordering information ACE5022AE XX + H Halogen - free Pb - free KG: SOT-563 VER 1.1 2 ACE5022AE Dual N-Channel Enhancement Mode MOSFET Electrical Characteristics TA=25℃, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V, ID=-250uA 20 VGS(th) VDS=VGS, ID=-250uA 0.35 Gate Leakage Current IGSS VDS=0V,VGS=±12V 30 Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 VDS=20V, VGS=0V TJ=55℃ 5 On-State Drain Current ID(ON) Drain-Source On-Resistance Forward Trans conductance Diode Forward Voltage VDS≧4.5V, VGS=5V V 1.0 0.7 uA A VGS=4.5V, ID=0.65A 0.26 0.38 VGS=2.5V, ID=0.55A 0.32 0.45 VGS=1.8V, ID=0.45A 0.42 0.80 Gfs VDS=10V,ID=0.4A 1.0 VSD IS=0.15A, VGS=0V 0.8 1.2 1.2 1.5 RDS(ON) nA Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.3 td(on) 5 10 8 15 10 18 1.2 2.8 Turn-On Time Turn-Off Time tr td(off) tf VDS=10V, VGS=4.5V, ID=0.6A VDD=10V, RL=10Ω, ID=0.5A,VGEN=4.5V, RG=6Ω 0.2 nC VER 1.1 nS 3 ACE5022AE Dual N-Channel Enhancement Mode MOSFET Typical Performance Characteristics Output Characteristics Transfer Characteristics VDS-Drain-to-Source Voltage (V) VGS-Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance ID-Drain Current (A) Gate Charge Qg-Total Gate Charge (nC) VDS-Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature TJ-Junction Temperature (℃) VER 1.1 4 ACE5022AE Dual N-Channel Enhancement Mode MOSFET Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD-Source-to-Drain Voltage (V) VGS-Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power TJ-Temperature(℃) Time (sec) Normalized Thermal Transient Impedance, Junction-to Foot Square Wave Pulse Duration (sec) VER 1.1 5 ACE5022AE Dual N-Channel Enhancement Mode MOSFET Packing Information SOT-563 VER 1.1 6 ACE5022AE Dual N-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 7