oauc£i, Una. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BTW63 SERES FAST TURN-OFF THYRISTORS Glass passivated, asymmetrical, fast turn-off, forward blocking thyristors (ASCR) in TO-48 envelopes, suitable for operation in fast power inverters. For reverse-blocking operation use with a series diode, for reverse-conducting operation use with an anti-parallel diode. QUICK REFERENCE DATA BTW63-600R 800R 1000R VDRM ma*- 800 1000 Average on-state current 'T(AV) max. 25 A Repetitive peak on-state current ITRM max. 250 A tq tq < < Repetitive peak off-state voltage 600 Circuit-commutated turn-off time suffix K suffix N suffix P MECHANICAL DATA 4 6 8 fiS MS IK Dimensions in mm Fig.1 TO-48 14.0 Net mass: 14 g Diameter of clearance hole: max. 6.5 mm Accessories supplied on request Supplied with device: 1 nut, 1 lock washer. Torque on nut: min. 1.7 Nm (17 kg cm) max. 3.5 Nm (35 kg cm) Nut dimensions across the flats: 11.1 mm NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors BTW63 SERIES RATINGS Limiting values in accordance with the Absolute Maximum System (IEC134) Anode to cathode Transient off-state voltage Repetitive peak off-state voltage Continuous off-state voltage BTW63-600R VDSM VDRM VD max. max. max. 800 600 500 V 800R 1000 1000R 1000 1000 V 800 650 700 V V *v VRSM max. 15 V 'T(AV) max. max. 25 22 A A max. max. 40 A 'TRM 250 A 'TSM i2t max. 370 A max. 700 A's dlj/dt max. 1000 A/MS Gate to cathode Average power dissipation (averaged over any 20 ms period) PG (AV) max. 1 W Peak power dissipation; t = 10 us PGM max. 10 W Temperatures Storage temperature Operating junction temperature stg T, -40 to+125 max. 125 Transient reverse voltage (tp < 5 /ra) Average on-state current (averaged over any 20 ms ns period] period) up to Tmb = 75 °C 'T(AV) R.M.S. on-state current Repetitive peak on-state current; tp = 50 jis; 8 = 0.05 0.05 Non-repetitive peak on-state current TJ = 125 °C prior to surge; t » 10 ms; half sine-wave l j t for fusing; t = 10ms • Rate of rise of on-state current after triggering with IG - 1,25 A; Ij = 80 A THERMAL RESISTANCE From junction to mounting base From mounting base to heatsink with heatsink compound 'T(RMS) °C °C Rtn j.m^ 0.9 K/W Rth mo.n 0.2 K/W OPERATING NOTE The terminals should be neither bent nor twisted; they should be soldered into the circuit so that there is no strain on them. During soldering the heat conduction to the junction should be kept to a minimum. BTW63 SERIES CHARACTERISTICS Anode to cathode On-state voltage IT = 50 A; TJ = 25 °C 2.6 Off-stats current Holding current; TJ = 25 °C ID IH 6.0 400 mA mA VGT 2.0 V 'GT 250 mA Gate to cathode Voltage that will trigger all devices V D = 1 2 V ; T j = 25°C Current that will trigger all devices Switching characteristics (see Fig.5) Circuit commutated turn-off time dVo/dt= 500 V//is (linear to VDRMmax); R G K = 10 n; V G = 0; TJ = 125 °C; when switched from l-r = 100 A;tp = 150 /is -d! T /dt=50A//is suffix K suffix IM suffix P 6 9 12 -dlT/dt= 10 A/fis suffix K suffix N suffix P 4 6 8 Vdl-r/dt reapplied VDM Fig.2 Circuit-commutated turn-off time definition. •Measured under pulse conditions to avoid excessive dissipation. MS BTW63 SERIES M81-1282/3 /b a =1.1 / s i P (W) J 1.9 • j / 2.8 4.0 Ii / // /, V // ft 25 M ff// t f't 'I f / 1ft ft t ft 1 f i //' ^ / / "^ ^ >x \ s t s, ^ \fc < SW X. ^« Skq s^ ^ ^ 40 0 V \ ^ 1 •s, x »^ s *, •s^ •^ 50 •^ ^ S, ^ sS s •^ «^ -^ s 10X5 ^ ^ s **, Sa 1 ^ \ ^V ^ * !^ \ s s ^ s, ^ T(AV)' A > V V s 80 k \ ^ 20 k^ ^ \ s Tmb s\ b <* *s *«* ^ sV \^ 7 f \af( \W^ "\ i / D |S /^- f: s,s^^ s 'j I IJMF 0 V f ^ 3 > f t * s ^ / f /f '> / 2.2f ^ . t 50 V J 1.57 \ Sy S Vc ^ •^ V % ' ^V sv \_ 5 '•-j r r 125 ^ 100 12 Tamb(°C) ig.3 The right-hand part shows the interrelationship between the power (derived from the left-h art) and the maximum permissible temperatures. , 'TfRMS) = form factor = 'T(AV) 57.5 ?