Diodes DMN1260UFA-7B Low on-resistance Datasheet

DMN1260UFA
12V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V(BR)DSS
RDS(ON) max
ID MAX
TA = +25°C
12V
366mΩ @ VGS = 4.5V
520mΩ @ VGS = 2.5V
950mΩ @ VGS = 1.8V
1500mΩ @ VGS =1.5V
0.5A

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0.4mm Ultra Low Profile Package for Thin Application
0.48mm2 Package Footprint, 16 Times Smaller than SOT23
Low On-Resistance
Low Input Capacitance
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications



Mechanical Data




Load Switch
Power Management Functions
Portable Power Adaptors

Case: X2-DFN0806-3
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.00043 grams (Approximate)
D
X2-DFN0806-3
G
Gate Protection
Diode
Bottom View
Top View
Package Pin Configuration
S
Internal Schematic
Ordering Information (Note 4)
Part Number
DMN1260UFA-7B
Notes:
Case
X2-DFN0806-3
Packaging
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
X2-DFN0806-3
88 = Product Type Marking Code
88
Top View
Bar Denotes Gate
and Source Side
DMN1260UFA
Document number: DS37122 Rev. 3 - 2
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DMN1260UFA
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Symbol
Value
Drain-Source Voltage
Characteristic
VDSS
12
Gate-Source Voltage
VGSS
±8
Unit
V
Continuous Drain Current
(Note 5)
ID
0.5
A
Pulsed Drain Current
(Note 6)
IDM
1.5
A
Units
Thermal Characteristics
Symbol
Value
Total Power Dissipation
Characteristic
(Note 5)
PD
0.36
W
Thermal Resistance, Junction to Ambient
(Note 5)
RJA
353
°C/W
TJ, TSTG
-55 to 150
°C
Operating and Storage Temperature Range
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
12
—
—
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
—
—
1
μA
VDS = 10V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±10
μA
VGS = ±8V, VDS = 0V
VGS(th)
0.4
—
1.0
V
VDS = VGS, ID = 250μA
—
150
366
—
200
520
—
260
950
—
350
1500
VSD
—
—
1.2
V
Drain-Source Breakdown Voltage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
RDS(ON)
VGS = 4.5V, ID = 200mA
mΩ
VGS = 2.5V, ID = 100mA
VGS = 1.8V, ID = 50mA
VGS = 1.5V, ID = 10mA
VGS = 0V, IS = 0.2A
DYNAMIC CHARACTERISTICS (Note 8)
Ciss
—
60
—
pF
Output Capacitance
Coss
—
13.8
—
pF
Reverse Transfer Capacitance
Crss
—
12.1
—
pF
Total Gate Charge
Qg
—
0.96
—
nC
Gate-Source Charge
Qgs
—
0.09
—
nC
Gate-Drain Charge
Qgd
—
0.10
—
nC
Turn-On Delay Time
tD(on)
—
7.4
—
ns
Turn-On Rise Time
tr
—
18.8
—
ns
Turn-Off Delay Time
tD(off)
—
106.5
—
ns
tf
—
59.2
—
ns
Input Capacitance
Turn-Off Fall Time
Notes:
VDS = 10V, VGS = 0V,
f = 1MHz
VDS = 6V, VGS = 4.5V, ID = 0.2A
VDD = 6V, VGS = 4.5V,
ID = 0.2A, RG = 6Ω
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN1260UFA
Document number: DS37122 Rev. 3 - 2
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DMN1260UFA
2.0
VGS = 8.0V
VGS = 4.5V
VGS = 4.0V
1.8
VGS = 3.0V
1.6
VGS = 2.5V
1.4
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VDS = 5.0V
VGS = 2.0V
VGS = 1.5V
VGS = 1.8V
1.2
1.0
0.8
0.6
VGS = 1.2V
TA = 85°C
0.4
TA = 150°C
T A = 25°C
0.2
0.5
1
1.5
2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.3
VGS = 1.8V
0.25
VGS = 2.5V
0.2
VGS = 4.5V
0.15
0.1 0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
2
1.6
R DS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
VGS = 4.5V
ID = 200mA
VGS = 2.5V
ID = 100mA
1.4
VGS = 1.8V
ID = 50mA
1.2
0
3
VGS = 1.5V
ID = 10mA
1
0.8
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.0
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
T A = 125°C
VGS = 1.0V
0.6
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 5 On-Resistance Variation with Temperature
DMN1260UFA
Document number: DS37122 Rev. 3 - 2
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T A = -55°C
0.5
1
1.5
2
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
2.5
0.24
0.22
VGS = 4.5V
TA = 150°C
TA = 125°C
0.2
T A = 85°C
0.18
0.16
TA = 25°C
0.14
0.12
TA = -55°C
0.1
0.08
0.2
0.4
0.6 0.8
1
1.2 1.4 1.6 1.8
ID, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
2
0.5
VGS = 1.5V
ID = 10mA
0.4
VGS = 1.8V
ID = 50mA
0.3
VGS = 2.5V
ID = 100mA
0.2
VGS = 4.5 V
ID = 200mA
0.1
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
February 2015
© Diodes Incorporated
DMN1260UFA
2
1.8
0.9
1.6
0.8
IS, SOURCE CURRENT (A)
VGS(th), GATE THRESHOLD VOLTAGE (V)
1
0.7
ID = 1mA
0.6
ID = 250µA
0.5
0.4
0.3
1.2
1
TA = 85°C
TA = 150°C
0.8
0.6
TA = 25°C
TA = 125°C
0.4
TA = -55°C
0.2
0.2
-50
0
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE ( C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
1000
0
0.3
0.6
0.9
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
1.5
6
VGS GATE THRESHOLD VOLTAGE (V)
CT, JUNCTION CAPACITANCE (pF)
1.4
f = 1MHz
100
Ciss
Coss
5
4
VDS = 6V
ID = 0.2A
3
2
1
C rss
10
0
2
4
6
8
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
r(t), TRANSIENT THERMAL RESISTANCE
1
12
0
0
0.2
0.4
0.6
0.8
1
1.2
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
1.4
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1 D =
0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Rthja(t)=r(t) * Rthja
Rthja=333 C/W
Duty Cycle, D=t1 / t2
Single Pulse
0.001
0.000001
0.00001
DMN1260UFA
Document number: DS37122 Rev. 3 - 2
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 11 Transient Thermal Resistance
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10
100
1000
February 2015
© Diodes Incorporated
DMN1260UFA
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A3
A1
A
X2-DFN0806-3
Dim Min Max Typ
A
0.375 0.40 0.39
A1
0
0.05 0.02
A3
0.10
b
0.10 0.20 0.15
D
0.55 0.65 0.60
D1
0.35 0.45 0.40
E
0.75 0.85 0.80
E1
0.20 0.30 0.25
e
0.35
K
0.20
L
0.20 0.30 0.25
All Dimensions in mm
Seating Plane
D
e
L (2x)
b (2x)
K
E
E1
Pin#1
R0.075
D1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Dimensions
Y1
C
X
X1
X2
Y
Y1
Y2
Y2
X (2x)
Y (2x)
Value
(in mm)
0.350
0.200
0.450
0.550
0.375
0.475
1.000
C
X2
DMN1260UFA
Document number: DS37122 Rev. 3 - 2
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DMN1260UFA
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Copyright © 2015, Diodes Incorporated
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DMN1260UFA
Document number: DS37122 Rev. 3 - 2
6 of 6
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February 2015
© Diodes Incorporated