FDB86360_F085 N-Channel Power Trench® MOSFET D D 80V, 110A, 1.8mΩ Features Typ rDS(on) = 1.5mΩ at VGS = 10V, ID = 80A G Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A UIS Capability G RoHS Compliant TO-263 FDB SERIES Qualified to AEC Q101 Applications S S For current package drawing, please refer to the Fairchild website at www.fairchildsemi.com/packaging Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Parameter Ratings 80 Units V ±20 V Gate to Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 110 Pulsed Drain Current TC = 25°C See Figure4 Single Pulse Avalanche Energy (Note 2) 1167 A mJ Power Dissipation 333 W Derate above 25oC 2.22 W/oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance Junction to Case RθJA Maximum Thermal Resistance Junction to Ambient -55 to + 175 oC 0.45 oC/W 43 oC/W (Note 3) Package Marking and Ordering Information Device Marking FDB86360 Device FDB86360_F085 Package D2-PAK(TO-263) Reel Size 330mm Tape Width 24mm Quantity 800 units Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 0.57mH, IAS = 64A, VDD = 80V during inductor charging and VDD = 0V during time in avalanche 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. ©2013 Fairchild Semiconductor Corporation FDB86360_F085 Rev. C2 1 www.fairchildsemi.com FDB86360_F085 N-Channel Power Trench® MOSFET January 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Drain to Source Leakage Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 80V, VGS = 0V 80 - - V - - 1 μA TJ = 25oC TJ = 175oC(Note 4) - - 1 mA - - ±100 nA 2.0 3.0 4.5 V - 1.5 1.8 mΩ - 2.7 3.2 mΩ VGS = ±20V On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 80A, VGS= 10V TJ = 25oC TJ = 175oC(Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge at 10V VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge - VDS = 25V, VGS = 0V, f = 1MHz VDD = 40V ID = 80A - 14600 - pF - 4700 - pF - 370 - pF - 3.2 - Ω - 207 253 nC - 27 34 nC - 78 - nC 47 - nC Switching Characteristics ton Turn-On Time - - 388 ns td(on) Turn-On Delay Time - 75 - ns tr Rise Time td(off) Turn-Off Delay Time tf toff - 197 - ns - 86 - ns Fall Time - 70 - ns Turn-Off Time - - 226 ns V VDD = 40V, ID = 80A, VGS = 10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage Trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 80A, VGS = 0V - - 1.25 ISD = 40A, VGS = 0V - - 1.2 V IF = 80A, dISD/dt = 100A/μs, VDD=64V - 103 120 ns - 212 260 nC Notes: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. FDB86360_F085 Rev. C2 2 www.fairchildsemi.com FDB86360_F085 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 350 1.0 300 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) CURRENT LIMITED BY PACKAGE 250 VGS = 10V CURRENT LIMITED BY SILICON 200 150 100 50 0 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs Case Temperature Figure 1. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 DUTY CYCLE - DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 IDM, PEAK CURRENT (A) VGS = 10V 1000 100 TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 10 175 - TC I = I2 150 SINGLE PULSE 1 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDB86360_F085 Rev. C2 3 www.fairchildsemi.com FDB86360_F085 N-Channel Power Trench® MOSFET Typical Characteristics 1000 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 100us 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 1ms 10ms SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 1 100ms 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 TJ = -55oC 50 3 4 5 6 7 VGS, GATE TO SOURCE VOLTAGE (V) 200 100 0.01 0.1 1 10 100 1000 10000 VGS = 0 V 10 TJ = 175 oC TJ = 25 oC 1 0.1 0.01 0.0 8 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics 200 200 VGS 15V Top 10V 8V 7V 6V 5.5V Bottom 150 80μs PULSE WIDTH Tj=25oC 100 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) STARTING TJ = 150oC Figure 6. Unclamped Inductive Switching Capability TJ = 175oC 0 10 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 VDD = 5V TJ = 25oC STARTING TJ = 25oC tAV, TIME IN AVALANCHE (ms) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 150 100 1 0.001 200 Figure 5. Forward Bias Safe Operating Area 200 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 50 VGS 15V Top 10V 8V 5.5V 7V 6V 5.5V 5V Bottom 150 100 50 80μs PULSE WIDTH Tj=175oC 5.5V 0 0.0 0 0.5 1.0 1.5 2.0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 9. Saturation Characteristics FDB86360_F085 Rev. C2 0 5V 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 10. Saturation Characteristics 4 www.fairchildsemi.com FDB86360_F085 N-Channel Power Trench® MOSFET Typical Characteristics ID = 80A NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 40 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 30 20 TJ = 175oC TJ = 25oC 10 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. Rdson vs Gate Voltage 0.8 ID = 80A VGS = 10V 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 1.10 ID = 5mA 1.05 1.0 0.8 1.00 0.6 0.95 0.4 0.2 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.90 -80 200 Figure 13. Normalized Gate Threshold Voltage vs Temperature VGS, GATE TO SOURCE VOLTAGE(V) Ciss 10000 Coss 1000 Crss 100 f = 1MHz VGS = 0V 10 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 15. Capacitance vs Drain to Source Voltage FDB86360_F085 Rev. C2 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 100000 CAPACITANCE (pF) 1.2 Figure 12. Normalized Rdson vs Junction Temperature VGS = VDS ID = 250μA 1.2 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.6 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.4 2.0 10 ID = 80A VDD = 32V 8 VDD = 40V VDD = 48V 6 4 2 0 0 50 100 150 200 Qg, GATE CHARGE(nC) 250 Figure 16. Gate Charge vs Gate to Source Voltage 5 www.fairchildsemi.com FDB86360_F085 N-Channel Power Trench® MOSFET Typical Characteristics tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 FDB86360_F085 Rev. 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