Fairchild FDB86360 F085 N-channel power trenchâ® mosfet Datasheet

FDB86360_F085
N-Channel Power Trench® MOSFET
D
D
80V, 110A, 1.8mΩ
Features
„ Typ rDS(on) = 1.5mΩ at VGS = 10V, ID = 80A
G
„ Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A
„ UIS Capability
G
„ RoHS Compliant
TO-263
FDB SERIES
„ Qualified to AEC Q101
Applications
S
S
For current package drawing, please refer to the Fairchild
website at www.fairchildsemi.com/packaging
„ Automotive Engine Control
„ Powertrain Management
„ Solenoid and Motor Drivers
„ Integrated Starter/alternator
„ Primary Switch for 12V Systems
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
VGS
ID
EAS
PD
Parameter
Ratings
80
Units
V
±20
V
Gate to Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
TC = 25°C
110
Pulsed Drain Current
TC = 25°C
See Figure4
Single Pulse Avalanche Energy
(Note 2)
1167
A
mJ
Power Dissipation
333
W
Derate above 25oC
2.22
W/oC
TJ, TSTG Operating and Storage Temperature
RθJC
Thermal Resistance Junction to Case
RθJA
Maximum Thermal Resistance Junction to Ambient
-55 to + 175
oC
0.45
oC/W
43
oC/W
(Note 3)
Package Marking and Ordering Information
Device Marking
FDB86360
Device
FDB86360_F085
Package
D2-PAK(TO-263)
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 0.57mH, IAS = 64A, VDD = 80V during inductor charging and VDD = 0V during time in avalanche
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum rating
presented here is based on mounting on a 1 in2 pad of 2oz copper.
©2013 Fairchild Semiconductor Corporation
FDB86360_F085 Rev. C2
1
www.fairchildsemi.com
FDB86360_F085 N-Channel Power Trench® MOSFET
January 2014
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Drain to Source Leakage Current
IGSS
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
VDS = 80V,
VGS = 0V
80
-
-
V
-
-
1
μA
TJ = 25oC
TJ = 175oC(Note 4)
-
-
1
mA
-
-
±100
nA
2.0
3.0
4.5
V
-
1.5
1.8
mΩ
-
2.7
3.2
mΩ
VGS = ±20V
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250μA
ID = 80A,
VGS= 10V
TJ = 25oC
TJ = 175oC(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
f = 1MHz
Qg(ToT)
Total Gate Charge at 10V
VGS = 0 to 10V
Qg(th)
Threshold Gate Charge
VGS = 0 to 2V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller“ Charge
-
VDS = 25V, VGS = 0V,
f = 1MHz
VDD = 40V
ID = 80A
-
14600
-
pF
-
4700
-
pF
-
370
-
pF
-
3.2
-
Ω
-
207
253
nC
-
27
34
nC
-
78
-
nC
47
-
nC
Switching Characteristics
ton
Turn-On Time
-
-
388
ns
td(on)
Turn-On Delay Time
-
75
-
ns
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
toff
-
197
-
ns
-
86
-
ns
Fall Time
-
70
-
ns
Turn-Off Time
-
-
226
ns
V
VDD = 40V, ID = 80A,
VGS = 10V, RGEN = 6Ω
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
Trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD = 80A, VGS = 0V
-
-
1.25
ISD = 40A, VGS = 0V
-
-
1.2
V
IF = 80A, dISD/dt = 100A/μs,
VDD=64V
-
103
120
ns
-
212
260
nC
Notes:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
FDB86360_F085 Rev. C2
2
www.fairchildsemi.com
FDB86360_F085 N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
350
1.0
300
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
CURRENT LIMITED
BY PACKAGE
250
VGS = 10V
CURRENT LIMITED
BY SILICON
200
150
100
50
0
175
25
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
200
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 1. Normalized Power Dissipation vs Case
Temperature
NORMALIZED THERMAL
IMPEDANCE, ZθJC
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TC
SINGLE PULSE
0.01
-5
10
-4
10
-3
-2
-1
0
10
10
10
t, RECTANGULAR PULSE DURATION(s)
1
10
10
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
IDM, PEAK CURRENT (A)
VGS = 10V
1000
100
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
10
175 - TC
I = I2
150
SINGLE PULSE
1
-5
10
-4
10
-3
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
0
10
1
10
Figure 4. Peak Current Capability
FDB86360_F085 Rev. C2
3
www.fairchildsemi.com
FDB86360_F085 N-Channel Power Trench® MOSFET
Typical Characteristics
1000
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
1000
100
100us
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
1
1ms
10ms
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
0.1
1
100ms
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
100
TJ = -55oC
50
3
4
5
6
7
VGS, GATE TO SOURCE VOLTAGE (V)
200
100
0.01
0.1
1
10
100
1000 10000
VGS = 0 V
10
TJ = 175 oC
TJ = 25 oC
1
0.1
0.01
0.0
8
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
200
200
VGS
15V Top
10V
8V
7V
6V
5.5V Bottom
150
80μs PULSE WIDTH
Tj=25oC
100
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
STARTING TJ = 150oC
Figure 6. Unclamped Inductive Switching
Capability
TJ = 175oC
0
10
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
VDD = 5V
TJ = 25oC
STARTING TJ = 25oC
tAV, TIME IN AVALANCHE (ms)
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
150
100
1
0.001
200
Figure 5. Forward Bias Safe Operating Area
200
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
50
VGS
15V Top
10V
8V 5.5V
7V
6V
5.5V
5V Bottom
150
100
50
80μs PULSE WIDTH
Tj=175oC
5.5V
0
0.0
0
0.5
1.0
1.5
2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
FDB86360_F085 Rev. C2
0
5V
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
5
Figure 10. Saturation Characteristics
4
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FDB86360_F085 N-Channel Power Trench® MOSFET
Typical Characteristics
ID = 80A
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
40
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
30
20
TJ = 175oC
TJ = 25oC
10
0
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 11. Rdson vs Gate Voltage
0.8
ID = 80A
VGS = 10V
0.4
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
200
1.10
ID = 5mA
1.05
1.0
0.8
1.00
0.6
0.95
0.4
0.2
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
0.90
-80
200
Figure 13. Normalized Gate Threshold Voltage vs
Temperature
VGS, GATE TO SOURCE VOLTAGE(V)
Ciss
10000
Coss
1000
Crss
100
f = 1MHz
VGS = 0V
10
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 15. Capacitance vs Drain to Source
Voltage
FDB86360_F085 Rev. C2
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 14. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
100000
CAPACITANCE (pF)
1.2
Figure 12. Normalized Rdson vs Junction
Temperature
VGS = VDS
ID = 250μA
1.2
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1.6
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
NORMALIZED GATE
THRESHOLD VOLTAGE
1.4
2.0
10
ID = 80A
VDD = 32V
8
VDD = 40V
VDD = 48V
6
4
2
0
0
50
100
150
200
Qg, GATE CHARGE(nC)
250
Figure 16. Gate Charge vs Gate to Source
Voltage
5
www.fairchildsemi.com
FDB86360_F085 N-Channel Power Trench® MOSFET
Typical Characteristics
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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2.
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system whose failure to perform can be reasonably expected to cause
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
FDB86360_F085 Rev. C2
6
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FDB86360_F085 N-Channel Power Trench® MOSFET
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