DMP3007SFG Green 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI RDS(ON) Max ID Max TC = +25°C 6mΩ @ VGS = -10V -70A 13mΩ @ VGS = -4.5V -45A BVDSS -30V Features and Benefits Low RDS(ON) – Ensures on State Losses are Minimized Small Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies Just 33% of the Board Area Occupied By SO-8 Enabling Smaller End Product ESD Protected Gate Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it Mechanical Data ideal for high efficiency power management applications. Case: PowerDI3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed Over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.030 grams (Approximate) Applications Backlighting Power Management Functions DC-DC Converters D Pin 1 S S S G G D D ESD PROTECTED Gate Protection Diode D D Top View S Equivalent Circuit Bottom View Ordering Information (Note 4) Part Number DMP3007SFG-7 DMP3007SFG-13 Notes: Case PowerDI3333-8 PowerDI3333-8 Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YYWW ADVANCE INFORMATION Product Summary V08= Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 16 = 2016) WW = Week Code (01 to 53) V08 POWERDI is a registered trademark of Diodes Incorporated. DMP3007SFG Document number: DS39018 Rev. 2 - 2 1 of 7 www.diodes.com September 2016 © Diodes Incorporated DMP3007SFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol Value Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±25 V ID -70 -55 A Continuous Drain Current (Note 7) VGS = -10V Steady State TC = +25°C TC = +70°C Maximum Continuous Body Diode Forward Current (Note 6) IS -3.0 A IDM -120 A Avalanche Current (Notes 8) L = 1mH IAS -16 A Avalanche Energy (Notes 8) L = 1mH EAS 130 mJ Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit TA = +25°C PD 1.2 W Steady State RθJA 105 °C/W TA = +25°C PD 2.8 W Steady State RθJA 45 °C/W RθJC 3.0 °C/W TJ, TSTG -55 to +150 °C Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS -30 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS — — -1 μA VDS = -24V, VGS = 0V Gate-Source Leakage IGSS — — ±10 μA VGS = ±20V, VDS = 0V VGS(TH) -1.0 — -3.0 V VDS = VGS, ID = -250μA — 4.3 6 ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage RDS(ON) mΩ — 6.6 13 VSD — -0.7 -1.2 V VGS = -10V, ID = -11.5A VGS = -4.5V, ID = -8.5A VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 10) Ciss — 2826 — pF Output Capacitance Coss — 606 — pF Reverse Transfer Capacitance Crss — 305 — pF Gate Resistance Rg — 23 — Ω Total Gate Charge (VGS = -4.5V) Qg — 31.2 — nC Total Gate Charge (VGS = -10V) Qg — 64.2 — nC Gate-Source Charge Qgs — 10.6 — nC Input Capacitance Qgd — 11.6 — nC tD(ON) — 4.8 — ns Turn-On Rise Time tR — 4.3 — ns Turn-Off Delay Time tD(OFF) — 306 — ns tF — 125 — ns Reverse Recovery Time tRR — 19 — ns Reverse Recovery Charge QRR — 9.8 — nC Gate-Drain Charge Turn-On Delay Time Turn-Off Fall Time Notes: VDS = -15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VDS = -15V, ID = -11.5A VDD = -15V, VGS = -10V, Rg = 6Ω, ID = -11.5A IS = -11.5A, dI/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. DMP3007SFG Document number: DS39018 Rev. 2 - 2 2 of 7 www.diodes.com September 2016 © Diodes Incorporated DMP3007SFG 30 30.0 VGS = -3.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = -4.5V 20.0 VGS = -10.0V 15.0 VGS =-3.0V 10.0 VGS = -2.7V 5.0 20 15 TJ=125℃ 10 TJ=85℃ TJ=25℃ TJ=150℃ 5 VGS = -2.5V TJ=-55℃ 0 0.0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0 2 10.00 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 5 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mW) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mW) 0 9.00 8.00 VGS = -4.5V 7.00 6.00 5.00 4.00 VGS = -10V 3.00 2.00 1.00 0.00 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) 25 ID = -11.5A 20 15 10 5 ID = -8.5A 0 0 30 5 10 15 20 25 VGS, GATE-SOURCE VOLTAGE (V) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage Figure 4. Typical Transfer Characteristic 2 8 VGS = -10V 1.8 7 150℃ RDS(ON), DRAIN-SOURCE ONRESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) ADVANCE INFORMATION VDS = -5V VGS=-4.0V 25.0 6 125℃ 5 85℃ 4 25℃ 3 -55℃ 2 1 VGS = -10V, ID = -11.5A 1.6 1.4 1.2 1 VGS = -4.5V, ID = -8.5A 0.8 0.6 0.4 0 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated. DMP3007SFG Document number: DS39018 Rev. 2 - 2 3 of 7 www.diodes.com September 2016 © Diodes Incorporated 3 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 12 10 VGS = -4.5V, ID = -8.5A 8 6 4 VGS = -10V, ID = -11.5A 2 0 -50 -25 0 25 50 75 100 125 2.5 ID = -1mA 2 1.5 ID = -250μA 1 0.5 0 150 -50 TJ, JUNCTION TEMPERATURE (℃) 30 150 10000 f=1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V 25 Is, SOURCE CURRENT (A) -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature Figure 7. On-Resistance Variation with Temperature 20 15 10 TJ = TJ = 85oC 125oC TJ = 25oC TJ = 150oC 5 Ciss 1000 Coss Crss TJ = -55oC 0 100 0 0.3 0.6 0.9 1.2 0 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 2 4 6 8 10 VDS, DRAIN-SOURCE VOLTAGE (V) 12 Figure 10. Typical Junction Capacitance 1000 10 RDS(ON) Limited 9 PW =100µs ID, DRAIN CURRENT (A) 8 7 VGS (V) ADVANCE INFORMATION DMP3007SFG 6 5 4 3 VDS = -15V, ID = -11.5A 2 100 10 1 0.1 1 0 0.01 0 10 20 30 40 Qg (nC) 50 60 70 Figure 11. Gate Charge PW =1ms PW =10ms PW =100ms PW =1s TJ(Max) = 150℃ TC = 25℃ Single Pulse PW =10s DUT on 1*MRP Board DC VGS= -10V 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 POWERDI is a registered trademark of Diodes Incorporated. DMP3007SFG Document number: DS39018 Rev. 2 - 2 4 of 7 www.diodes.com September 2016 © Diodes Incorporated DMP3007SFG r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 1 D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t) = r(t) * RθJA RθJA = 98℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) 100 1000 Figure 13. Transient Thermal Resistance POWERDI is a registered trademark of Diodes Incorporated. DMP3007SFG Document number: DS39018 Rev. 2 - 2 5 of 7 www.diodes.com September 2016 © Diodes Incorporated DMP3007SFG Package Outline Dimensions ADVANCE INFORMATION Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 A3 A1 A Seating Plane D L(4x) D2 1 Pin #1 ID E4 b2(4x) E E3 E2 L1(3x) 8 z(4x) b PowerDI3333-8 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.15 0.25 0.20 D 3.25 3.35 3.30 D2 2.22 2.32 2.27 E 3.25 3.35 3.30 E2 1.56 1.66 1.61 E3 0.79 0.89 0.84 E4 1.60 1.70 1.65 e 0.65 L 0.35 0.45 0.40 L1 0.39 z 0.515 All Dimensions in mm e Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 X3 X2 8 Y2 X1 Y1 Y3 Y Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 1 X C POWERDI is a registered trademark of Diodes Incorporated. DMP3007SFG Document number: DS39018 Rev. 2 - 2 6 of 7 www.diodes.com September 2016 © Diodes Incorporated DMP3007SFG ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated. DMP3007SFG Document number: DS39018 Rev. 2 - 2 7 of 7 www.diodes.com September 2016 © Diodes Incorporated