Infineon C67047-A4687-A001 Fast switching diode chip in emcon-technology Datasheet

Preliminary
SIDC56D60E6
Fast switching diode chip in EMCON-Technology
FEATURES:
• 600V EMCON technology 70 µm chip
• soft , fast switching
• low reverse recovery charge
• small temperature coefficient
Chip Type
VR
IF
SIDC56D60E6
600V
150A
A
This chip is used for:
• EUPEC power modules and
discrete devices
C
Applications:
• SMPS, resonant applications,
drives
Die Size
Package
7.5 x 7.5 mm2
sawn on foil
Ordering Code
C67047-A4687A001
MECHANICAL PARAMETER:
Raster size
Area total / active
Anode pad size
7.5 x 7.5
56.25 / 46.65
mm
2
6.78 x 6.78
Thickness
70
µm
Wafer size
150
mm
Flat position
180
deg
Max. possible chips per wafer
248 pcs
Passivation frontside
Photoimide
Anode metallisation
3200 nm AlSiCu
Cathode metallisation
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, ≤500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 4223M, Edition 1, 8.01.2002
Preliminary
SIDC56D60E6
Maximum Ratings
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
600
IF
150
Continuous forward current limited by
Tjmax
Single pulse forward current
(depending on wire bond configuration)
Maximum repetitive forward current
limited by Tjmax
Operating junction and storage
temperature
Condition
I FSM
Value
tP = 10 ms sinusoidal
V
A
tbd
I FRM
Unit
450
Tj , Ts t g
-55...+150
°C
Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified
Parameter
Symbol
Reverse leakage current
IR
Cathode-Anode
breakdown Voltage
V Br
Forward voltage drop
VF
Conditions
V R =600V
Tj= 2 5 ° C
I R= 4 m A
Tj= 2 5 ° C
I F =150A
Tj= 2 5 ° C
Value
min.
Typ.
max.
27
600
Unit
µA
V
1.25
V
Dynamic Electrical Characteristics, at Tj = 25 °C, unless otherwise specified, tested at component
Parameter
Reverse recovery time
Symbol
t rr1
t rr2
Conditions
I F= 1 5 0 A
di/dt=5600A/ µs
V R =300V
Value
min.
Typ.
Tj = 2 5 ° C
ns
Tj = 1 2 5 ° C
I F= 1 5 0 A
Tj = 2 5 ° C
190.2
IRRM2
di/dt=5600A/ µs
VR = 3 0 0 V
Tj = 1 2 5 ° C
228.5
Qrr1
I F= 1 5 0 A
Tj= 2 5 ° C
9.97
Qrr2
di/dt=5600A/ µs
VR = 3 0 0 V
Tj= 1 2 5 ° C
16.5
Peak rate of fall of reverse di r r 1 /dt
recovery current
di r r 2 /dt
I F= 1 5 0 A
T j = 25 ° C
tbd
Softness
S1
I F= 1 5 0 A
S2
di/dt=5600A/ µs
VR = 3 0 0 V
Reverse recovery charge
di/dt=5600A/ µs
VR = 3 0 0 V
A
µC
Tj= 1 2 5 ° C
Tj= 2 5 ° C
Tj= 1 2 5 ° C
Edited by INFINEON Technologies AI PS DD HV3, L 4223M, Edition 1, 8.01.2002
Unit
tbd
IRRM1
Peak recovery current
max.
A / µs
tbd
1
Preliminary
SIDC56D60E6
CHIP DRAWING:
Edited by INFINEON Technologies AI PS DD HV3, L 4223M, Edition 1, 8.01.2002
Preliminary
SIDC56D60E6
FURTHER ELECTRICAL CHARACTERISTICS :
This chip data sheet refers to the
device data sheet
INFINEON TECHNOLOGIES /
EUPEC
tbd
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Strasse 53
D-81541 München
© Infineon Technologies AG 2000
All Rights Reserved.
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characteristics.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Edited by INFINEON Technologies AI PS DD HV3, L 4223M, Edition 1, 8.01.2002
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