SMD Type Transistors PNP Transistors BC807A (KC807A) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 1 High collector current. 0.55 For general AF applications. +0.1 1.3 -0.1 +0.1 2.4 -0.1 Features 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 High current gain. +0.05 0.1 -0.01 +0.1 0.97 -0.1 Low collector-emitter saturation voltage. ● Complementary NPN type available(BC817A) 1.Base 0-0.1 +0.1 0.38 -0.1 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base v oltage VCBO -50 V Collector-emitter v oltage VCEO -45 V Emitter-base voltage VEBO -5 V Collector current (DC) IC -500 mA Peak collector current ICM -1 A Base current IB -100 mA power dissipation PD 310 mW Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditions Min Typ Max Unit Collector-to-base breakdown voltage VCBO IC = -100 A, IE = 0 -50 V Collector-to-emitter breakdown voltage VCEO IC = -10 mA, IB = 0 -45 V Emitter-to-base breakdown voltage VEBO IE = -100 A, IC = 0 -5 Collector cutoff current ICBO Emitter cutoff current IEBO -100 VCB = -25 V, IE = 0 , TA = 150 -50 A VEB = -4 V, IC = 0 -100 nA BC807A-16 DC current gain * BC807A-25 IC = -100 mA, VCE = -1 V hFE V VCB = -25 V, IE = 0 BC807A-40 Collector saturation voltage * VCE(sat) IC = -500 mA, IB = -50 mA Base to emitter voltage * VBE(sat) IC = -500 mA, IB = -50 mA 100 160 250 160 250 400 250 350 nA 630 -0.7 -1.2 V V Collector-base capacitance CCb VCB = -10 V, f = 1 MHz Emitter-base capacitance Ceb VEB = -0.5 V, f = 1 MHz 60 pF IC = -50 mA, VCE = -5 V, f = 100 MHz 200 MHz Transition frequency * Pulsed: PW fT 350 us, duty cycle 10 pF 2% ■ Classification of hfe Type BC807A-16 BC807A-25 BC807A-40 Range 100-250 160-400 250-630 Marking 5A 5B 5C www.kexin.com.cn 1 Transistors SMD Type BC807A (KC807A) ■ Typical Characterisitics h FE - I C I C - VCE COMMON EMITTER VCE =-1V Ta=100 C Ta=25 C Ta=-25 C 50 30 -100 -300 -3 -400 -2 -200 0 -1000 I B =-1mA 0 0 -1 Ta=25 C Ta=-25 C -30 -300 -100 -1000 -300 C -30 -10 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) 2 www.kexin.com.cn -1000 COLLECTOR POWER DISSIPATION P C (mW) TRANSITION FREQUENCY f T (MHz) 30 -3 -0.6 -0.8 -1.0 P C - Ta COMMON EMITTER Ta=25 C VCE =-5V -1 -0.4 BASE-EMITTER VOLTAGE V BE (V) 100 10 C -3 -1 -0.2 -1000 fT - I C 300 -6 -100 COLLECTOR CURRENT I C (mA) 500 -5 COMMON EMITTER VCE =1V 100 Ta=100 C -0.1 -0.01 -10 -4 Ta= COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COMMON EMITTER I C /IB =25 -0.3 -0.03 -3 I C - V BE VCE(sat) - I C -1 -2 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT IC (mA) -3 -4 -25 -30 -5 Ta= 10 -10 -600 C 100 COMMON EMITTER Ta=25 C 25 300 -800 Ta= 500 COLLECTOR CURRENT IC (mA) DC CURRENT GAIN h FE 1000 500 400 300 200 100 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 175