DMNH4011SK3 Green 40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits NEW PRODUCT ADVANCED INFORMATION BVDSS 40V RDS(ON) Max ID TC = +25°C 10mΩ @ VGS = 10V 50A Rated to +175C – ideal for high ambient temperature environments Low On-Resistance Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. DC-DC Converters Power Management Functions Analog Switch Case: TO252 (DPAK) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) D D TO252 G D G S Top View Pin Out Top View S Internal Schematic Ordering Information (Note 4) Part Number DMNH4011SK3-13 Notes: Case TO252 Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information H4011S YYWW DMNH4011SK3 Document number: DS37403 Rev. 2 - 2 =Manufacturer’s Marking H4011S = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 14 = 2014) WW = Week Code (01 to 53) 1 of 6 www.diodes.com July 2015 © Diodes Incorporated DMNH4011SK3 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT ADVANCED INFORMATION TC = +25°C TC = +100°C Steady State Continuous Drain Current (Note 6) ID Maximum Body Diode Forward Current (Note 6) Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%) IS IDM Value 40 ±20 50 27 120 120 Unit V V Value 2.6 47 50 3 -55 to +175 Unit W °C/W W °C/W °C A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: Symbol PD RJA PD RJC TJ, TSTG Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 40 1 ±100 V µA nA VGS = 0V, ID = 250µA VDS = 40V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) VSD 2 0.9 4 10 1.2 V mΩ V VDS = VGS, ID = 250µA VGS = 10V, ID = 50A VGS = 0V, IS = 20A Ciss Coss Crss RG Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR 1,405 247 108 2.2 25.5 4.6 6.9 4.6 3.7 16 5.1 22.1 13.4 pF VDS = 20V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 20V, VGS = 10V , ID = 50A ns VDD = 20V, VGS = 10V, ID = 50A, RG = 3.5Ω ns nC IF = 50A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Device mounted on infinite heat sink and measured by thermal couple attached on bottom heat sink of package. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMNH4011SK3 Document number: DS37403 Rev. 2 - 2 2 of 6 www.diodes.com July 2015 © Diodes Incorporated DMNH4011SK3 50.0 30 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS=5V VGS=5.0V 40.0 VGS=6.0V VGS=4.0V VGS=10.0V 30.0 20.0 VGS=3.5V 10.0 20 15 175℃ 10 85℃ 150℃ 25℃ 5 125℃ VGS=3.0V -55℃ 0.0 0 0 0.5 1 1.5 2 2.5 3 1.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (MΩ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (MΩ) 9.50 9.00 VGS=10.0V 8.00 7.50 7.00 6.50 6.00 5 10 15 20 25 30 35 40 45 50 150℃ 125℃ 175℃ 0.016 0.014 85℃ 0.012 0.01 25℃ 0.008 -55℃ 0.006 0.004 0.002 0 0 5 10 15 20 25 30 35 40 45 50 Document number: DS37403 Rev. 2 - 2 4 4.5 ID=50A 17 14 ID=20A 11 8 5 2 4 6 8 10 12 14 16 18 20 2.2 2 1.8 1.6 1.4 VGS=10V, ID=50A 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMNH4011SK3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.02 VGS=10V 3 20 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0.018 2.5 Figure 2. Typical Transfer Characteristic 10.00 8.50 2 VGS, GATE-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT ADVANCED INFORMATION VGS=4.5V 3 of 6 www.diodes.com July 2015 © Diodes Incorporated 0.02 0.018 0.016 0.014 VGS=10V, ID=50A 0.012 0.01 0.008 0.006 0.004 0.002 0 -50 -25 0 25 50 75 100 125 150 175 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 3 2.8 2.6 2.4 2.2 2 ID=250µA 1.6 1.4 1.2 1 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs Temperature 50 CT, JUNCTION CAPACITANCE (pF) 10000 43 IS, SOURCE CURRENT (A) ID=1mA 1.8 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 36 VGS=0V, TA=175℃ 29 22 VGS=0V, TA=85℃ VGS=0V, TA=150℃ VGS=0V, TA=25℃ 15 VGS=0V, TA=125℃ 8 VGS=0V, TA=-55℃ f=1MHz Ciss 1000 1 Coss 100 Crss 10 0 0.3 0.6 0.9 1.2 1.5 0 5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 10 15 20 25 30 35 40 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 1000 10 RDS(ON) Limited ID, DRAIN CURRENT (A) 8 6 VGS (V) NEW PRODUCT ADVANCED INFORMATION DMNH4011SK3 4 VDS=20V, ID=50A 2 0 PW =10µs 100 PW =1s PW =100ms 10 PW =10ms PW =1ms 1 0.1 TJ(Max)=175°C TC=25°C Single Pulse DUT on infinite heatsink VGS=10V PW =100µs PW =1µs 0.01 0 3 6 9 12 15 18 21 24 27 DMNH4011SK3 Document number: DS37403 Rev. 2 - 2 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area Qg (nC) Figure 11. Gate Charge 4 of 6 www.diodes.com July 2015 © Diodes Incorporated DMNH4011SK3 NEW PRODUCT ADVANCED INFORMATION r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.9 D=0.3 D=0.7 0.1 D=0.5 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJC(t)=r(t) * RθJC RθJC=3.03°C/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. E A b3 7°±1° c L3 D A2 L4 e H b(3x) b2(2x) Gauge Plane E1 0.508 D1 Seating Plane a L A1 2.74REF DMNH4011SK3 Document number: DS37403 Rev. 2 - 2 5 of 6 www.diodes.com TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° All Dimensions in mm July 2015 © Diodes Incorporated DMNH4011SK3 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. NEW PRODUCT ADVANCED INFORMATION X1 Y1 Dimensions C X X1 Y Y1 Y2 Y2 C Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 Y X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com DMNH4011SK3 Document number: DS37403 Rev. 2 - 2 6 of 6 www.diodes.com July 2015 © Diodes Incorporated