DMN2008LFU DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Features RDS(ON) Max 5.4mΩ @ VGS = 4.5V 6.2mΩ @ VGS = 4.0V 6.4mΩ @ VGS = 3.7V 7.5mΩ @ VGS = 3.1V 9.6mΩ @ VGS = 2.5V 20V ID TA = +25°C 14.5A 13.5A 13.0A 12.0A 10.5A Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) , yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Power Management Functions Battery Pack Load Switch Case: U-DFN2030-6 (Type B) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Terminal Connections: See Diagram Below Weight: 0.012 grams (Approximate) D1 U-DFN2030-6 (Type B) D2 G1 ESD PROTECTED G2 Gate Protection Diode Top View Pin-Out Bottom View Gate Protection Diode S1 S2 Equivalent Circuit Ordering Information (Note 4) Part Number DMN2008LFU-7 DMN2008LFU-13 Notes: Case U-DFN2030-6 (Type B) U-DFN2030-6 (Type B) Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http:// www.diodes.com/products/packages.html. YYWW Marking Information N28 DMN2008LFU Document number: DS38625 Rev. 3 - 2 N28 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 16 for 2016) WW = Week Code (01 to 53) 1 of 7 www.diodes.com June 2016 © Diodes Incorporated DMN2008LFU Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25°C TA = +70°C Maximum Continuous Body Diode Forward Current (Note 6) Unit V V ID Value 20 ±12 14.5 11.5 A IS 2.2 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 75 A Avalanche Current (Note 7) L = 0.1mH IAS 26 A Avalanche Energy (Note 7) L = 0.1mH EAS 34 mJ Symbol PD RΘJA PD RΘJA RΘJC TJ, TSTG Value 1.0 123 1.7 73 12 -55 to +150 Units W °C/W W Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case Operating and Storage Temperature Range Electrical Characteristics TA = +25°C Steady State TA = +25°C Steady State °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 — — — — — — 1.0 ±10 V μA μA VGS = 0V, ID = 250μA VDS = 16V, VGS = 0V VGS = ±9.6V, VDS = 0V VGS(TH) 0.5 RDS(ON) — mΩ VSD — 1.5 5.4 6.2 6.4 7.5 9.6 1.2 V Static Drain-Source On-Resistance — 4.7 4.8 4.9 5.1 5.7 0.7 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 5.5A VGS = 4.0V, ID = 5.5A VGS = 3.7V, ID = 5.5A VGS = 3.1V, ID = 5.5A VGS = 2.5V, ID = 5.5A VGS = 0V, IS = 11A CISS COSS CRSS RG QG QG QGS QGD tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — — 1,418 323 106 465 18.7 42.3 3.2 4.4 277 653 1,989 1,208 492 908 — — — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: V Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 16V, ID = 11A, VDD = 16V, ID = 5.5A, VGS = 4.5V, RG = 6Ω IF =11 A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN2008LFU Document number: DS38625 Rev. 3 - 2 2 of 7 www.diodes.com June 2016 © Diodes Incorporated DMN2008LFU 30.0 5 25.0 VGS = 2.5V 20.0 VGS = 3.7V VDS = 10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS=2.0V VGS = 3.1V VGS = 4.0V 15.0 VGS = 4.5V VGS =1.5V 10.0 4 3 2 TJ=125℃ TJ=85℃ 1 TJ=25℃ TJ=150℃ 5.0 VGS = 1.3V TJ=-55℃ 0 0.0 0 0.5 1 1.5 2 2.5 0 3 7 6.5 6 VGS = 3.1V VGS = 3.7V 5.5 VGS = 4.0V 5 VGS = 4.5V 4.5 4 0 2 4 6 8 10 12 14 16 18 20 VGS = 4.5V TJ = 150℃ 8 TJ = 125℃ TJ = 85℃ TJ = 25℃ 4 TJ = -55℃ 2 5 10 18 16 14 12 10 8 6 4 ID = 5.5A 2 0 0 15 Document number: DS38625 Rev. 3 - 2 2 4 6 8 10 12 VGS, GATE-SOURCE VOLTAGE (V) 20 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMN2008LFU 2 Figure 4. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) 10 0 1.5 20 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 6 1 Figure 2. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic VGS = 2.5V 0.5 VGS, GATE-SOURCE VOLTAGE (V) 3 of 7 www.diodes.com 2 VGS = 4.5V, ID = 5.5A 1.5 1 VGS = 2.5V, ID = 5.5A 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature June 2016 © Diodes Incorporated 0.016 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-ESISTANCE (W) DMN2008LFU 0.014 0.012 0.01 VGS = 2.5V, ID = 5.5A 0.008 0.006 0.004 VGS = 4.5V, ID = 5.5A 0.002 0 -50 -25 0 25 50 75 100 125 1.2 1 ID = 1mA 0.8 ID = 250μA 0.6 0.4 0.2 0 -50 150 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature Figure 8. Gate Threshold Variation vs. Junction Temperature 20 CT, JUNCTION CAPACITANCE (pF) 10000 VGS = 0V Is, SOURCE CURRENT (A) -25 15 10 TJ= 85oC TJ = 125oC TJ= 25oC 5 TJ = 150oC TJ = -55oC f=1MHz 1000 Ciss Coss 100 Crss 10 0 0 0.3 0.6 0.9 1.2 0 1.5 5 VSD, SOURCE-DRAIN VOLTAGe (V) Figure 9. Diode Forward Voltage vs. Current 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 10 100 RDS(ON) Limited 9 PW =100µs Id, Drain Current (A) 8 Vgs (V) 7 6 5 4 3 VDS = 16V, ID = 11A 1 0 5 10 15 20 25 30 35 40 Qg - (nC) Figure 11. Gate Charge DMN2008LFU Document number: DS38625 Rev. 3 - 2 1 0.1 2 0 10 PW =1ms PW =10ms PW =100ms PW =1s TJ(Max) = 150℃ TC = 25℃ PW =10s Single Pulse DC DUT on 1*MRP Board VGS= 4.5V 0.01 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 4 of 7 www.diodes.com June 2016 © Diodes Incorporated DMN2008LFU r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 D=Single Pulse 0.001 0.00001 0.0001 RθJA(t) = r(t) * RθJA RθJA = 121℃/W Duty Cycle, D = t1 / t2 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMN2008LFU Document number: DS38625 Rev. 3 - 2 5 of 7 www.diodes.com June 2016 © Diodes Incorporated DMN2008LFU Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2030-6 (Type B) A3 A Seating Plane A1 D e D2 E E2 Pin#1 ID U-DFN2030-6 (Type B) Dim Min Max Typ A 0.55 0.65 0.60 A1 0.00 0.05 0.02 A3 – – 0.15 b 0.20 0.30 0.25 D 1.95 2.05 2.00 D2 1.40 1.60 1.50 E 2.95 3.05 3.00 E2 1.65 1.75 1.70 e – – 0.50 L 0.28 0.38 0.33 z – – 0.375 All Dimensions in mm L z(4x) b Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2030-6 (Type B) X3 Dimensions X2 Y2 Y1 G X X1 X2 X3 Y Y1 Y2 Value (in mm) 0.220 0.350 0.850 1.600 1.350 0.530 1.800 3.300 G X1 DMN2008LFU Document number: DS38625 Rev. 3 - 2 X Y 6 of 7 www.diodes.com June 2016 © Diodes Incorporated DMN2008LFU IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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