ESH2B-M3, ESH2C-M3, ESH2D-M3 www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES • Glass passivated pellet chip junction • Ideal for automated placement • Ultrafast recovery times for high efficiency • Low forward voltage, low power loss • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DO-214AA (SMB) TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converter and inverter for both consumer. PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 100 V, 150 V, 200 V trr 25 ns VF 0.93 V TJ max. 175 °C Package DO-214AA (SMB) Diode variations Single die MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test per Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code ESH2B ESH2C ESH2D UNIT EHB EHC EHD 100 150 200 V Maximum repetitive peak reverse voltage VRRM Maximum RMS voltage VRMS 70 105 140 V Maximum DC blocking voltage VDC 100 150 200 V Maximum average forward rectified current (fig. 1) IF(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 60 A TJ, TSTG -55 to +175 °C Operating junction and storage temperature range Revision: 19-Feb-15 Document Number: 89482 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ESH2B-M3, ESH2C-M3, ESH2D-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage SYMBOL VALUE UNIT VF (1) 0.93 V IF = 2 A TA = 25 °C Maximum DC reverse current at rated DC blocking voltage IR TA = 125 °C Maximum reverse recovery time IF = 0.5 A, IR = 1 A, Irr = 0.25 A Typical reverse recovery time IF = 2 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM TJ = 100 °C Typical stored charge IF = 2 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM TJ = 100 °C Typical junction capacitance 4.0 V, 1 MHz trr TJ = 25 °C trr TJ = 25 °C Qrr CJ 2.0 µA 50 25 ns 35 ns 55 20 nC 35 30 pF Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL ESH2C 65 RJL (1) 20 RJA Typical thermal resistance ESH2B (1) ESH2D UNIT °C/W Note Units mounted on PCB with 8.0 mm x 8.0 mm land areas (1) ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE ESH2D-M3/52T 0.096 52T 750 7" diameter plastic tape and reel ESH2D-M3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel PREFERRED P/N Revision: 19-Feb-15 Document Number: 89482 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ESH2B-M3, ESH2C-M3, ESH2D-M3 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1000 Instantaneous Reverse Leakage Current (µA) Average Forward Rectified Current (A) 2.5 2.0 1.5 1.0 0.5 0 TJ = 150 °C 10 TJ = 125 °C 1 TJ = 25 °C 0.1 0.01 0 25 50 75 100 125 150 175 20 40 60 80 Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 100 Junction Capacitance (pF) 50 40 30 20 10 1 10 10 1 0.1 0 100 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance 100 Transient Thermal Impedance (°C/W) 100 Instantaneous Forward Current (A) 100 Lead Temperature (°C) 60 Peak Forward Surge Current (A) TJ = 175 °C 100 TJ = 175 °C 10 TJ = 150 °C TJ = 125 °C 1 TJ = 25 °C 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 19-Feb-15 Document Number: 89482 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ESH2B-M3, ESH2C-M3, ESH2D-M3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Revision: 19-Feb-15 Document Number: 89482 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 1 Document Number: 91000