, Line,
J.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
DARLINGTON COPLEMENTARY
SILICON POWER TRANSISTORS
NPN
BDX53
PNP
BDX54
BDX53A BDX54A
BDX53B BDX54B
BDX53C BDXS4C
...designed for general-purpose amplifier and low speed switching
applications
FEATURES:
* Collector-Emitter Sustaining VottageVCR»u«i" "*5 V (Mln) - BDXS3.BDXS4
= 60 V (Mln) - BDX53A.BDX54A
= 80 V (Mln) - BDX53B.BOX54B
= 100 V(Min) - BDX53C.BDX54C
* Monolithic Construction with Built-in Base-Emitter Shunt Resistor
8 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
45-100 VOLTS
60 WATTS
MAXIMUM RATINGS
Symbol BDXS3 BDXS3A BDXS3B BDXS3C
BDX64 BDX84A BDX54B BDXS4C
Characteristic
Unit
Collector-Emitter Voltage
Veto
45
60
80
100
V
Collector-Base Voltage
Vcao
45
60
80
100
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current - Continuous
Peak
'c
'CM
8.0
12
A
Base Current
IB
0.2
A
Total Power Dissipation
eTc=25°C
Derate above 25°C
PD
60
0.48
W
W/°C
Operating and Storage Junction TJ-TSTO
Temperature Range
TO-220
°C
-65 to +150
THERMAL CHARACTERISTICS
Ch airflctttriSuc
Thermal Resistance Junction to Case
Symbol
Rejc
Max
2.08
Unit
PIN 1.1
2- COLLECTOR
°C/W
4.COLLECTOR(CASB)
DIM
FIGURE-1 POWER DERATING
80
70
60
50
40
30
* 10
25
50
75
100
125
190
A
B
C
0
E
F
G
H
1
J
K
L
M
O
MILLIMETERS
MIN
MAX
14.68
9.78
5.01
13.06
3.57
2.42
1.12
0.72
4.22
1.14
2.20
0.33
2.48
3.70
15.31
1042
6.52
14.62
4.07
3.66
1.36
0.96
4.86
1.38
297
0.55
258
3.90
Tc ,
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
BDX53,A,B,C NPN I BDX54,A,B,C PNP
ELECTRICAL CHARACTERISTICS ( Tc » 25°C unless otherwise
CharMtteristfc
noted )
Symbol
Mln
VCEOOU*)
46
60
80
100
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Vortafle(1)
( lc= 100 mA, l_- 0 )
Collector Cutoff Current
( VC1- 22 V, I.- 0 )
{ Vci= 30 V, I.- 0 )
( VC1= 40 V, l,» 0 )
( Vel= 50 V, l»= 0 )
BDX53, BDXS4
BDX53A, BDX54A
BDX53B, BDX54B
BDX53C, BDX54C
BDXS3, BDX54
BDX53A, BDX54A
BDX53B, BDX54B
BDX53C, BDX54C
mA
'ceo
Collector-Base Cutoff Current
(VCB- Rated V,,., I^O)
'ceo
Emitter-Base Cutoff Current
(VH»5.0V.IC=0)
IEBO
V
0.5
0.5
0.5
0.5
uA
200
mA
2.0
ON CHARACTERISTICS (1)
hFE
DC Current Gain
(IC-3.0A,VOI-3,OV)
750
Collector-Emitter Saturation Voltag
(IC«3.0A, I,- 12mA)
V
VcE,-q
Base-Emitter Saturation Voltage
(IC=3.0A, IB= 12mA)
2.0
V
VBE(«M)
Diode Forward-Voltage
(IF=3.0A)
2.5
V
VF
2.5
(1) Pulse Test Pulse Width =300 us, Duty Cycle £ 2.0%
INTERNAL SCHEMATIC DIAGRAM
BDX54 Series PNP
L