DMNH4005SPSQ 40V N-CHANNEL 175°C MOSFET POWERDI Green Product Summary Features BVDSS RDS(ON) 40V 4.0mΩ @ VGS = 10V ID TC = +25°C 80A PPAP Capable (Note 4) Description and Applications This MOSFET has been designed to meet the stringent requirements of Automotive applications. It is qualified to AECQ101, supported by a PPAP and is ideal for use in: Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application Low RDS(ON) – Minimises Power Losses Low Qg – Minimises Switching Losses <1.1mm Package Profile – Ideal for Thin Applications Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Engine Management Systems Body Control Electronics DC-DC Converters Mechanical Data Case: PowerDI5060-8 Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminals: Finish – Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) D PowerDI5060-8 Pin1 G S Top View D S D S D G D Top View Pin Configuration Internal Schematic Bottom View S Ordering Information (Note 5) Part Number DMNH4005SPSQ-13 Notes: Case PowerDI5060-8 Packaging 2,500 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information D D D D = Manufacturer’s Marking H4005SS = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 16 = 2016) WW = Week Code (01 to 53) H4005SS YY WW S S S G POWERDI is a registered trademark of Diodes Incorporated. DMNH4005SPSQ Document number: DS38860 Rev. 1 - 2 1 of 7 www.diodes.com September 2016 © Diodes Incorporated DMNH4005SPSQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7) VGS = 10V Steady State TC = +25°C TC = +100°C Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current (Note 8) L=1mH Avalanche Energy (Note 8) L=1mH Value 40 20 80 60 90 80 30 445 ID IDM IS IAS EAS Unit V V A A A A mJ Thermal Characteristics Characteristic Symbol PD Total Power Dissipation (Note 6) Steady State t<10s Thermal Resistance, Junction to Ambient (Note 6) RθJA Total Power Dissipation (Note 7) PD Steady State t<10s Thermal Resistance, Junction to Ambient (Note 7) RθJA Thermal Resistance, Junction to Case Operating and Storage Temperature Range Electrical Characteristics Unit W °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: RθJC TJ, TSTG Value 1.6 98 54 2.8 53 29 0.9 -55 to +175 Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 40 — — — — — — 1 ±100 V µA nA VGS = 0V, ID = 250µA VDS = 32V, VGS = 0V VGS = 16V, VDS = 0V VGS(TH) RDS(ON) VSD 1 — — — 3.2 — 3 4.0 1.2 V m V VDS = VGS, ID = 250µA VGS = 10V, ID = 20A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — — 2847 743 243 2.0 48 23 9.5 11.5 6.6 12.1 18.3 4.9 29 24 — — — — — — — — — — — — — — pF VDS = 20V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz nC VDD = 20V, ID = 20A ns VDD = 20V, VGS = 10V, Rg = 1, ID = 20A ns nC IF = 15A, di/dt = 100A/µs 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. DMNH4005SPSQ Document number: DS38860 Rev. 1 - 2 2 of 7 www.diodes.com September 2016 © Diodes Incorporated DMNH4005SPSQ 50.0 30 VDS=5V ID, DRAIN CURRENT (A) 40.0 ID, DRAIN CURRENT (A) 25 VGS=10.0V VGS=5.0V 30.0 VGS=4.5V VGS=4.0V 20.0 VGS=3.5V 10.0 20 15 10 175℃ 85℃ 0.004 0.0035 0.003 VGS=10.0V 0.0025 0.002 0.0015 0.001 0 5 10 15 20 25 1 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 30 35 40 45 0.04 0.03 0.02 ID=20A 0.01 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () VGS=10V 175℃ 150℃ 0.004 125℃ 85℃ 25℃ 0.002 -55℃ 6 0.05 50 0.008 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.06 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0.006 -55℃ 0 0.0 0.5 25℃ 125℃ VGS=3.0V 0 150℃ 5 4 8 12 16 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 20 2 1.8 1.6 1.4 1.2 1 VGS=10V, ID=20A 0.8 0.6 0 1 6 11 16 21 26 31 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature POWERDI is a registered trademark of Diodes Incorporated. DMNH4005SPSQ Document number: DS38860 Rev. 1 - 2 3 of 7 www.diodes.com September 2016 © Diodes Incorporated 0.01 4 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () DMNH4005SPSQ 0.008 0.006 0.004 VGS=10V, ID=20A 0.002 3.5 3 2.5 ID=1mA 2 ID=250µA 1.5 1 0.5 0 0 -50 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 100000 30 175℃ VGS=0V IDSS, LEAKAGE CURRENT (nA) 25 IS, SOURCE CURRENT (A) -25 20 15 TJ=175℃ TJ=150℃ 10 TJ=125℃ TJ=85℃ 5 TJ=25℃ 10000 150℃ 1000 125℃ 100 85℃ 10 1 25℃ TJ=-55℃ 0 0.1 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 1.5 0 5 10 15 20 25 30 35 40 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Drain-Source Leakge Current vs Voltage 10 10000 8 Ciss 6 VGS (V) CT, JUNCTION CAPACITANCE (pF) f=1MHz 1000 Coss 4 VDS=20V, ID=20A 2 Crss 0 100 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. Typical Junction Capacitance 40 0 10 20 30 Qg (nC) Figure 12. Gate Charge 40 50 POWERDI is a registered trademark of Diodes Incorporated. DMNH4005SPSQ Document number: DS38860 Rev. 1 - 2 4 of 7 www.diodes.com September 2016 © Diodes Incorporated DMNH4005SPSQ 1000 ID, DRAIN CURRENT (A) RDS(ON) Limited PW =10µs 100 PW =1s PW =100ms PW =10ms PW =1ms PW =100µs PW =1µs TJ(Max)=175℃ TC=25℃ VGS=10V Single Pulse DUT on Infinite Heatsink 10 1 0.1 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 13. SOA, Safe Operation Area 100 r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.9 D=0.7 D=0.5 0.1 D=0.3 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJC (t)=r(t) * RθJC RθJC=0.93℃/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 14. Transient Thermal Resistance POWERDI is a registered trademark of Diodes Incorporated. DMNH4005SPSQ Document number: DS38860 Rev. 1 - 2 5 of 7 www.diodes.com September 2016 © Diodes Incorporated DMNH4005SPSQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 D Detail A D1 PowerDI5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 Θ 10º 12º 11º Θ1 6º 8º 7º All Dimensions in mm 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 M b3 (4X) M1 Detail A L1 G Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X G Y(4x) Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 POWERDI is a registered trademark of Diodes Incorporated. DMNH4005SPSQ Document number: DS38860 Rev. 1 - 2 6 of 7 www.diodes.com September 2016 © Diodes Incorporated DMNH4005SPSQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. 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Copyright © 2016, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated. DMNH4005SPSQ Document number: DS38860 Rev. 1 - 2 7 of 7 www.diodes.com September 2016 © Diodes Incorporated