ZSELEC D1UBA60 0.8a surface mount glass passivated bridge rectifier Datasheet

Z ibo Seno Electronic Engineering Co., Ltd.
D1UBA05 – D1UBA100
0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Features
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G
Glass Passivated Die Construction
Low Forward Voltage Drop
High Current Capability
High Surge Current Capability
Designed for Surface Mount Application
Plastic Material – UL Flammability 94V-O
B
-
+
~
~
H
D
C
A
SOPA-4
Dim
Min
Max
4.90
5.10
A
4.30
4.60
B
0.15
0.25
C
—
0.15
D
6.00
6.40
E
0.30
0.70
G
0.90
1.10
H
J
—
1.50
3.90
4.10
K
L
1.22
1.42
All Dimensions in mm
L
Mechanical Data
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J
Case: SOPA-4, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Case
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version
K
Maximum Ratings and Electrical Characteristics
@TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
D1UB D1UB
A10
A05
D1UB D1UB D1UB D1UB
A20
A60
A60
A80
UA05
UA10
UA20
UA40
UA60
UA80
UA100
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
VR(RMS)
35
70
140
280
420
560
700
V
Symbol
Characteristic
Device marking code
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1) @TA = 40°C
Average Rectified Output Current (Note 2) @TA = 40°C
D1UB
A100
Unit
IO
0.8
A
IFSM
30
A
I2t
5.0
A2s
@IF = 0.4A
VFM
1.0
V
@TA = 25°C
@TA = 125°C
IRM
5.0
150
µA
Cj
13
pF
Typical Thermal Resistance per leg (Note 1)
RJA
RJL
62.5
20
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I2t Rating for Fusing (t < 8.3ms)
Forward Voltage per element
Peak Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance per leg (Note 3)
Note: 1. Mounted on glass epoxy PC board with 1.3mm2 solder pad.
2. Mounted on aluminum substrate PC board with 1.3mm2 solder pad.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
D1UB05 - D1UB100
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Z ibo Seno Electronic Engineering Co., Ltd.
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FORWARD RECTIFIED CURRENT (A)
D1UBA05 – D1UBA100
0.8
0.6
Al. Substrate PC Board
0.4
0.2
Resistive or Inductive Load
40
1.0
0.1
Tj = 25°C
Pulse Width = 300µs
0.01
0
0
10
80
120
0.2
160
0.6
0.8
1.0
1.2
1.4
1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per leg)
100
35
Tj = 25°C
f = 1.0MHz
30
Cj, JUNCTION CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Output Current Derating Curve
0.4
20
10
TA = 25°C
Single Half Sine-Wave
Pulse Width = 5.3ms
(JEDEC Method)
10
1
0
1.0
1
10
10
IR, INSTANTANEOUS REVERSE CURRENT (µA)
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Peak Forward Surge Current (per leg)
100
Tj = 125°C
10
1.0
Tj = 25°C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics (per element)
D1UB05 - D1UB100
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