Spec. No. : C302S346.13 Revised Date : 2012.02.10 Page No. : 1/7 CYStech Electronics Corp. Small Signal Schottky (double) diodes BAR40S3/BAR40AS3 BAR40CS3/BAR40SS3 Description Planar silicon Schottky barrier diodes encapsulated in a SOT-323 small plastic SMD package. Single diodes and double diodes with different pinning are available. Features •Very small conduction losses •Low forward voltage drop •Small plastic SMD package •Pb-free package Applications •Ultra high-speed switching •Voltage clamping •Protection circuits •Blocking diodes Pinning Outline Pin 1 2 3 BAR40 A NC K Description BAR40A BAR40C K1 A1 K2 A2 A1,A2 K1,K2 3 3 3 1 SOT-323 BAR40S A1 K2 K1,A1 1 2 1 2 2 N.C. (1) BAR40 (2)BAR40A 3 2 1 Marking: 3 (3)BAR40C 1 2 (4)BAR40S Type BAR40 S3 BAR40AS3 BAR40CS3 BAR40SS3 Marking Code B4 B7 5C B8 Diode configuration and symbol BAR40S3/BAR40AS3/BAR40CS3/BAR40SS3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C302S346.13 Revised Date : 2012.02.10 Page No. : 2/7 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature Tstg.................................................................................................... -65~+150 °C Junction Temperature Tj .......................................................................................................-55~ +125°C • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) Ptot (Note) ......................................................................... 200 mW • Maximum Voltages and Currents (Ta=25°C) Repetitive Peak Reverse Voltage VRRM............................................................................................... 40 V Continuous Forward Current IF ................................................................................................... 200 mA Repetitive Peak Forward Current(tp≤1s,duty cycle≤0.5)………………………………………… 300mA Non-repetitive Peak Forward Current (tp<10ms, sinusoidal) IFSM ............................................... 600 mA Note: for double diodes, Ptot is the total power dissipation of both diodes. Characteristics (Ta=25°C) Characteristic Symbol Reverse Breakdown Voltage Forward Voltage (Note 1) VBR Condition IR=100μA Min. Max. Unit 40 - V VF(1) IF=1mA - 320 mV VF(2) IF=40mA - 500 mV VF(3) IF=100mA VR=30V, Tj=25℃ - 550 mV - 200 nA - 10 pF - 5 ns Reverse Leakage Current (Note 2) IR Diode Capacitance CD Reverse Recovery Time trr VR=1V, f=1MHz IF=IR=10mA RL=100Ω measured at IR=1mA Notes: 1.pulse test, tp=380μs,duty cycle<2%. 2.pulse test, tp=5ms,duty cycle<2%. BAR40S3/BAR40AS3/BAR40CS3/BAR40SS3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C302S346.13 Revised Date : 2012.02.10 Page No. : 3/7 Characteristic Curves Forward Current & Forward Voltage Diode Capacitance & Reverse-Biased Voltage 100 250 Diode Capacitance-Cd (pF) Forward Current-IF (mA) 200 150 100 10 50 0 1 0 200 400 600 Forward Voltage-VF (mV) BAR40S3/BAR40AS3/BAR40CS3/BAR40SS3 800 1000 0.1 1 10 100 Reverse Biased Voltage-VR (V) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C302S346.13 Revised Date : 2012.02.10 Page No. : 4/7 Reel Dimension Carrier Tape Dimension BAR40S3/BAR40AS3/BAR40CS3/BAR40SS3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C302S346.13 Revised Date : 2012.02.10 Page No. : 5/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BAR40S3/BAR40AS3/BAR40CS3/BAR40SS3 CYStek Product Specification Spec. No. : C302S346.13 Revised Date : 2012.02.10 Page No. : 6/7 CYStech Electronics Corp. SOT-323 Dimension Marking: 3 A Q A1 1 L4_ XX C Lp 2 detail Z bp e1 W B Diagram: e E D A Z θ He 0 v A 2 mm 1 scale 3-Lead SOT-323 Plastic Surface Mounted Package. CYStek Package Code: S3 • BAR40 S3 : Single Diode (Marking Code B4) • BAR40CS3 : Common Cathode. (Marking Code 5C) • BAR40AS3 : Common Anode. (Marking Code B7) • BAR40SS3 : Series Connected. (Marking Code B8) *: Typical Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0118 0.0157 0.0039 0.0098 0.0709 0.0866 0.0453 0.0531 0.0512 - DIM A A1 bp C D E e Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.30 0.40 0.10 0.25 1.80 2.20 1.15 1.35 1.3 - DIM e1 He Lp Q v w θ Inches Min. Max. 0.0256 0.0787 0.0886 0.0059 0.0177 0.0051 0.0091 0.0079 0.0079 - Millimeters Min. Max. 0.65 2.00 2.25 0.15 0.45 0.13 0.23 0.2 0.2 10° 0° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BAR40S3/BAR40AS3/BAR40CS3/BAR40SS3 CYStek Product Specification