MOSFET SMD Type P-Channel MOSFET FDN304P (KDN304P) SOT-23-3 Unit: mm ■ Features 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 1 ● RDS(ON) ＜ 52mΩ (VGS =-4.5V) 0.55 +0.2 1.6 -0.1 +0.2 2.8 -0.1 ● VDS (V) =-20V ● ID =-2.4A (VGS =-4.5V) 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 ● RDS(ON) ＜ 70mΩ (VGS =-2.5V) 1.1 +0.2 -0.1 ● RDS(ON) ＜ 100mΩ (VGS =-1.8V) 0-0.1 D +0.1 0.68 -0.1 1.Gate 2.Source 3.Drain S G ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 ID -2.4 IDM -10 Continuous Drain Current (Note.1) Pulsed Drain Current Power Dissipation (Note.1) (Note.2) PD 0.5 0.46 Thermal Resistance.Junction- to-Ambient (Note.1) RthJA 250 Thermal Resistance.Junction- to-Case RthJC 75 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 Unit V A W ℃/W ℃ Note.1: 250°C/W when mounted on a 0.02 in 2 pad of 2 oz. copper. Note.2: 270°C/W when mounted on a minimum pad. www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET FDN304P (KDN304P) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Typ Max -20 Unit V Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=-16V, VGS=0V -1 μA Gate-Body leakage current IGSS VDS=0V, VGS=±8 V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -1.5 V Static Drain-Source On-Resistance RDS(On) (Note.1) -0.4 VGS=-4.5V, ID=-2.4A (Note.1) 52 VGS=-2.5V, ID=-2A (Note.1) 70 VGS=-1.8V, ID=-1.8A (Note.1) 100 ID(ON) VGS=-4.5V, VDS=-5V Forward Transconductance gFS VDS=-5V, ID=-1.25A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 106 Total Gate Charge Qg 12 Gate Source Charge Qgs On state drain current -10 12 S 1312 VGS=0V, VDS=-10V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-2.4A pF 240 20 nC 2 Qgd 2 Turn-On DelayTime td(on) 15 27 Turn-On Rise Time tr 15 27 Turn-Off DelayTime td(off) 40 64 25 40 VGS=-4.5V, VDS=-10V, ID=-1A,RG=6Ω tf Maximum Body-Diode Continuous Current Diode Forward Voltage IS VSD IS=-0.42A,VGS=0V Note.1: Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0% ■ Marking Marking 304 www.kexin.com.cn mΩ A Gate Drain Charge Turn-Off Fall Time 2 Min ns -0.42 A -1.2 V MOSFET SMD Type P-Channel MOSFET FDN304P (KDN304P) ■ Typical Characterisitics -ID, DRAIN CURRENT (A) 15 4 VGS = -4.5V -2.5V -3.0V 12 3.5 -2.0V 9 VGS = -1.5V 3 2.5 -1.8V -1.8V 2 6 -2.0V 1.5 -1.5V 3 -2.5V 1 -3.0V -4.5V 0.5 0 0 0.5 1 1.5 2 0 2.5 3 6 9 12 15 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.14 1.5 ID = -1.2 A ID = -2.4A VGS = -4.5V 1.4 0.12 1.3 0.1 1.2 1.1 0.08 o TA = 125 C 1 0.06 0.9 o TA = 25 C 0.04 0.8 0.7 -50 -25 0 25 50 75 100 125 150 o 0.02 1 2 TJ, JUNCTION TEMPERATURE ( C) 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 15 VDS = - 5V TA = o VGS = 0V 10 25 C 12 o -55 C 1 o TA = 125 C 9 o 0.1 6 25 C o -55 C 0.01 3 0.001 0.0001 0 0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET FDN304P (KDN304P) ■ Typical Characterisitics 5 2100 VDS = -5V ID = -2.4A -10V f = 1MHz VGS = 0 V 1800 4 -15V CISS 1500 3 1200 900 2 600 1 COSS 300 CRSS 0 0 0 2 4 6 8 10 12 0 14 5 10 15 Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 20 RDS(ON) 1ms 10 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) SINGLE PULSE R JA = 270°C/W TA = 25°C 15 10ms 100ms 1 10s DC VGS =-4.5V SINGLE PULSE 0.1 R JA 10 1s 5 o = 270 C/W o TA = 25 C 0.01 0 0.1 1 10 100 0.001 0.01 0.1 -VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. . 1 D = 0.5 R JA(t) = r(t) + R JA R JA = 270 °C/W 0.2 0.1 0.1 0.05 0.02 0.01 P(pk) t1 0.01 SINGLE PULSE t2 TJ - TA = P * R JA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. 4 www.kexin.com.cn 100 1000