Diodes DMP32D4SFB 30v p-channel enhancement mode mosfet Datasheet

DMP32D4SFB
30V P-CHANNEL ENHANCEMENT MODE MOSFET
ADVANCE
NEW PRODUCT
INFORMATION
Product Summary
V(BR)DSS
RDS(on) Max
-30V
2.4 @ VGS = -10V
4 @ VGS = -4.5V
16 @ VGS = -2.5V
Features
ID Max
@ TA = +25C
-400mA
-300mA
-50mA

Low On-Resistance

Ultra-Small Surfaced Mount Package

ESD Protected Gate

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data


Case: X1-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Applications

Load Switch

Portable Applications

Power Management Functions

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram

Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208 e4

Weight: 0.001 grams (approximate)
Drain
X1-DFN1006-3
Gate
S
D
G
ESD PROTECTED
Bottom View
Top View
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 4)
Product
DMP32D4SFB-7B
Notes:
Marking
XP
Reel size (inches)
7
Quantity per reel
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
XP
XP = Product Type Marking Code
Top View
Bar Denotes Gate and Source Side
DMP32D4SFB
Document number: DS36161 Rev. 2 - 2
1 of 6
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March 2013
© Diodes Incorporated
DMP32D4SFB
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
ADVANCE
NEW PRODUCT
INFORMATION
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
VGS = -10V
Continuous Drain Current (Note 6)
VGS = -10V
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Value
-30
±20
-400
-300
ID
mA
-500
-400
-1
-800
ID
Pulsed Drain Current (Note 5)
Maximum Body Diode continuous Current
Unit
V
V
IDM
IS
mA
A
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Value
0.5
1.2
273
105
-55 to 150
PD
RJA
Operating and Storage Temperature Range
TJ, TSTG
Units
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-30
-
-
-1
±10
V
µA
µA
VGS = 0V, ID = -1mA
VDS = -30V, VGS = 0V
VGS = ±16V, VDS = 0V
VGS(th)
-1.3
-
V
Static Drain-Source On-Resistance
RDS (ON)
-
-
|Yfs|
VSD
-
6
0.8
-2.3
2.4
4
16
1.2
VDS = VGS, ID = -250μA
VGS = -10V, ID = -200mA
VGS = -4.5V, ID = -200mA
VGS = -2.5V, ID = -10mA
VDS = -10V, ID = -400mA
VGS = 0V, IS = -300mA
Ciss
Coss
Crss
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
51
11
9
0.6
1.3
0.2
0.2
3.6
8.5
31.3
20.2
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Ω
S
V
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDS = -15V, VGS = 0V,
f = 1.0MHz
VGS = -4.5V
VGS = -10V
VDS = -10V,
ID = -200mA
VDS = -15V, ID = -500mA
VGS = -10V, RG = 1Ω
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMP32D4SFB
Document number: DS36161 Rev. 2 - 2
2 of 6
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March 2013
© Diodes Incorporated
DMP32D4SFB
1.0
1.0
VGS = -10V
0.8
VGS = -4.0V
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
VGS = -4.5V
VGS = -3.0V
0.6
0.4
0.2
0
0
1
2
3
4
-VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.9
0.8
0.7
0.6
VGS = -4.5V
0.4
VGS = -10V
0.3
0.2
0.1
0
0
0.2
0.4
0.6
0.8
-ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.0
1.4
0.4
T A = 150 C
T A = 125 C
TA = 85C
T A = 25C
TA = -55C
1
2
3
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
4
1.5
ID = -0.2A
1.2
0.9
0.6
0.3
0
0
2
4
6
8 10 12 14 16 18 20
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
1.6
1.2
VGS = -10V
ID = -300mA
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
VGS = -4.5V
1.0
TA = 150C
0.8
T A = 125C
TA = 85C
0.6
T A = 25C
0.4
TA = -55C
0.2
0
0.6
0
5
1.0
0.5
VDS = -5.0V
0.2
VGS = -2.5V
VGS = -2.0V
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
ADVANCE
NEW PRODUCT
INFORMATION
0.8
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
-ID, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
DMP32D4SFB
Document number: DS36161 Rev. 2 - 2
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1.4
1.2
VGS = -4.5V
ID = -200mA
1.0
0.8
0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
March 2013
© Diodes Incorporated
2.2
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(on), DRAIN-SOURCE ON-RESISTANCE ()
1.2
0.9
VGS = -4.5V
ID = -200mA
0.6
VGS = -10V
ID = -300mA
0.3
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
2.0
1.8
1.4
1.2
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
CT, JUNCTION CAPACITANCE (pF)
-IS, SOURCE CURRENT (A)
-ID = 250µA
100
0.8
0.6
T A= 150 C
0.4
TA= 125C
T A= 85C
TA= 25C
0.2
TA= -55 C
0
-ID = 1mA
1.6
1.0
0
0.3
0.6
0.9
1.2
1.5
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
Ciss
Coss
10
Crss
f = 1MHz
1
0
5
10
15
20
25
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
30
10
-VGS, GATE-SOURCE VOLTAGE (V)
ADVANCE
NEW PRODUCT
INFORMATION
DMP32D4SFB
8
VDS = -10V
ID = -200mA
6
4
2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
DMP32D4SFB
Document number: DS36161 Rev. 2 - 2
1.4
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DMP32D4SFB
Package Outline Dimensions
ADVANCE
NEW PRODUCT
INFORMATION
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
X1-DFN1006-3
Dim Min
Max Typ
A
0.47
0.53 0.50
A1
0
0.05 0.03
b1
0.10
0.20 0.15
b2
0.45
0.55 0.50
D
0.95 1.075 1.00
E
0.55 0.675 0.60
e
0.35


L1
0.20
0.30 0.25
L2
0.20
0.30 0.25
L3
0.40


All Dimensions in mm
A
A1
D
b1
E
e
b2
L2
L3
L1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
X1
X
G2
G1
Y
Dimensions
Z
G1
G2
X
X1
Y
C
Value (in mm)
1.1
0.3
0.2
0.7
0.25
0.4
0.7
Z
DMP32D4SFB
Document number: DS36161 Rev. 2 - 2
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March 2013
© Diodes Incorporated
DMP32D4SFB
IMPORTANT NOTICE
ADVANCE
NEW PRODUCT
INFORMATION
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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Copyright © 2013, Diodes Incorporated
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DMP32D4SFB
Document number: DS36161 Rev. 2 - 2
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