PD - 97687A
AUTOMOTIVE GRADE
AUIRFR3504
Features
l
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HEXFET® Power MOSFET
Advanced Planar Technology
Low On-Resistance
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed
up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified*
V(BR)DSS
D
G
S
40V
RDS(on) typ.
max
ID (Silicon Limited)
7.8mΩ
9.2mΩ
87A
ID (Package Limited)
56A
j
D
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
S
G
D-Pak
AUIRFR3504
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T A) is 25°C, unless otherwise specified.
Max.
Parameter
Units
j
61j
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
87
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
A
56
c
350
PD @TC = 25°C Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
VGS
140
0.92
± 20
W
W/°C
V
mJ
IDM
Pulsed Drain Current
d
EAS
Single Pulse Avalanche Energy (Thermally Limited)
240
EAS (tested )
Single Pulse Avalanche Energy Tested Value
480
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
c
i
See Fig. 12a, 12b, 15, 16
c
A
mJ
-55 to + 175
°C
300
Thermal Resistance
Typ.
Max.
–––
1.09
Junction-to-Ambient (PCB Mount)
–––
50
Junction-to-Ambient
–––
110
RθJC
Junction-to-Case
RθJA
RθJA
l
Parameter
k
Units
°C/W
HEXFET®
is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/30/11
AUIRFR3504
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Min. Typ. Max. Units
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
40
–––
–––
2.0
40
–––
–––
–––
–––
–––
0.041
7.8
–––
–––
–––
–––
–––
–––
–––
–––
9.2
4.0
–––
20
250
200
-200
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 30A **
V VDS = VGS, ID = 250μA
S VDS = 10V, ID = 30A **
μA VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
f
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
–––
–––
–––
–––
–––
–––
–––
–––
48
12
13
11
53
36
22
4.5
71
18
20
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
2150
580
46
2830
510
870
–––
–––
–––
–––
–––
–––
S
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
nC
ns
nH
g
pF
ID = 30A **
VDS = 32V
VGS = 10V
VDD = 20V
ID = 30A **
RG = 6.8Ω
VGS = 10V
Between lead,
f
f
D
G
Diode Characteristics
Parameter
Min. Typ. Max. Units
j
Conditions
IS
Continuous Source Current
–––
–––
87
ISM
(Body Diode)
Pulsed Source Current
–––
–––
350
showing the
integral reverse
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
1.3
80
130
S
p-n junction diode.
TJ = 25°C, IS = 30A**, VGS = 0V
TJ = 25°C, IF = 30A**, VDD = 20V
di/dt = 100A/μs
c
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C,
L = 0.52mH, RG = 25Ω, IAS = 30A, VGS =10V.
Part not recommended for use above this
value.
ISD ≤ 30A, di/dt ≤ 170A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
2
MOSFET symbol
A
–––
–––
–––
–––
53
86
V
ns
nC
D
G
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 56A.
When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
Rθ is measured at TJ of approximately 90°C.
** All AC and DC test conditions based on former package
limited current of 30A.
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AUIRFR3504
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device
Model
RoHS Compliant
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
D-Pak
MSL1
Class M4 (+/- 500V)†††
AEC-Q101-002
Class H1C (+/- 1500V)†††
AEC-Q101-001
Class C5 (+/- 2000V)†††
AEC-Q101-005
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRFR3504
1000
1000
ID, Drain-to-Source Current (A)
100
10
BOTTOM
1
4.0V
0.1
0.01
TOP
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
20μs PULSE WIDTH
Tj = 25°C
0.001
0.1
1
10
100
100
BOTTOM
10
4.0V
1
20μs PULSE WIDTH
Tj = 175°C
0.1
1000
0.1
1
VDS, Drain-to-Source Voltage (V)
100
1000
Fig 2. Typical Output Characteristics
1000.00
80
G fs , Forward Transconductance (S)
ID, Drain-to-Source Current (Α)
10
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
T J = 175°C
100.00
10.00
TJ = 25°C
1.00
VDS = 25V
20μs PULSE WIDTH
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
70
T J = 25°C
60
50
TJ = 175°C
40
30
20
VDS = 25V
10
0.10
4
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
16.0
20μs PULSE WIDTH
0
0
20
40
60
80
100
120
ID,Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
Vs. Drain Current
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AUIRFR3504
100000
VGS , Gate-to-Source Voltage (V)
Ciss
1000
Coss
100
Crss
I D = 30A
8
6
4
2
10
0
1
10
0
100
1000
ID, Drain-to-Source Current (A)
1000
100
°C
TJ = 25
°C
1
V GS = 0 V
0.1
0.5
1.0
1.5
2.0
2.5
V SD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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30
40
50
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
10
0.0
20
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
TJ = 175
10
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
I SD , Reverse Drain Current (A)
VDS = 32V
VDS = 20V
VDS = 8V
10
Coss = Cds + Cgd
10000
C, Capacitance(pF)
12
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
100μsec
10
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
1
3.0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRFR3504
90
2.5
80
Limited By Package
2.0
60
50
40
30
20
10
0
25
50
75
100
125
150
175
(Normalized)
RDS(on) , Drain-to-Source On Resistance
70
ID, Drain Current (A)
I D = 87A
1.5
1.0
0.5
V GS = 10V
0.0
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
( ° C)
TJ , Junction Temperature
T C , Case Temperature (°C)
Fig 10. Normalized On-Resistance
Vs. Temperature
Fig 9. Maximum Drain Current Vs.
Case Temperature
(Z thJC )
10
1
Thermal Response
D = 0.50
0.20
P DM
0.10
0.1
0.05
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
0.01
t1 / t 2
J = P DM x Z thJC
+TC
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRFR3504
15V
500
D.U.T
+
V
- DD
IAS
VGS
20V
EAS , Single Pulse Avalanche Energy (mJ)
400
RG
A
0.01Ω
tp
ID
12A
21A
BOTTOM
30A
DRIVER
L
VDS
TOP
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
300
200
100
0
25
50
75
100
Starting Tj, Junction Temperature
125
150
175
( ° C)
I AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
4.0
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2μF
.3μF
D.U.T.
+
V
- DS
VGS(th) Gate threshold Voltage (V)
VG
3.5
3.0
ID = 250μA
2.5
2.0
1.5
-75 -50 -25
VGS
0
25
50
75 100 125 150 175 200
T J , Temperature ( °C )
3mA
IG
ID
Current Sampling Resistors
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRFR3504
10000
Duty Cycle = Single Pulse
Avalanche Current (A)
1000
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Δ Tj = 25°C due to
avalanche losses
0.01
0.05
10
0.10
1
0.1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
EAR , Avalanche Energy (mJ)
250
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 30A
200
150
100
50
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT jmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
Vs. Temperature
8
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AUIRFR3504
D.U.T
Driver Gate Drive
+
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
V DD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
*
ISD
VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
V GS
RG
RD
D.U.T.
+
-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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9
AUIRFR3504
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
Part Number
AUFR3504
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFR3504
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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11
AUIRFR3504
Ordering Information
12
Base part
number
Package Type
AUIRFR3504
Dpak
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
75
2000
3000
3000
AUIRFR3504
AUIRFR3504TR
AUIRFR3504TRL
AUIRFR3504TRR
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AUIRFR3504
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its
subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible
or liable for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for
that product or service voids all express and any implied warranties for the associated IR product or service
and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application
in which the failure of the IR product could create a situation where personal injury or death may occur. Should
Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall
indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of
Defense, are designed and manufactured to meet DLA military specifications required by certain military,
aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by
DLA as military-grade, in applications requiring military grade products, is solely at the Buyers own risk and
that they are solely responsible for compliance with all legal and regulatory requirements in connection with
such use.
IR products are neither designed nor intended for use in automotive applications or environments unless
the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part
number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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13