APTC60DHM45T1G VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Asymmetrical bridge Super Junction MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • • • • Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Pins 3/4 must be shorted together Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 49 38 130 ±20 45 250 15 3 1900 Unit V A August, 2009 ID Parameter Drain - Source Breakdown Voltage V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTC60DHM45T1G – Rev 0 Symbol VDSS APTC60DHM45T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 24.5A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V 2.1 40 3 Max 250 500 45 3.9 100 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 25V f = 1MHz Min Typ 7.2 8.5 nF 150 VGS = 10V VBus = 300V ID = 49A nC 34 51 21 Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 49A RG = 5Ω 30 ns 100 45 Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5Ω Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5Ω 675 µJ 520 1100 µJ 635 Diode ratings and characteristics IRM IF VF Min Maximum Reverse Leakage Current VR=600V Reverse Recovery Time Qrr Reverse Recovery Charge 25 500 30 IF = 30A 1.8 IF = 60A 2.2 IF = 30A VR = 400V di/dt =200A/µs www.microsemi.com Unit V Tj = 25°C Tj = 125°C Tc = 80°C IF = 30A trr Max 600 DC Forward Current Diode Forward Voltage Typ Tj = 125°C 1.5 Tj = 25°C 25 Tj = 125°C 160 Tj = 25°C 35 Tj = 125°C 480 µA A 2.2 V August, 2009 VRRM Test Conditions Maximum Peak Repetitive Reverse Voltage ns nC 2–7 APTC60DHM45T1G – Rev 0 Symbol Characteristic APTC60DHM45T1G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ CoolMOS Diode To heatsink M4 4000 -40 -40 -40 2.5 Max 0.5 1.2 Unit °C/W V 150 125 100 4.7 80 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ T T ⎝ 25 ⎠⎦ ⎣ See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTC60DHM45T1G – Rev 0 August, 2009 SP1 Package outline (dimensions in mm) APTC60DHM45T1G Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 140 360 VGS=15&10V 6.5V 280 ID, Drain Current (A) 6V 240 200 5.5V 160 120 5V 80 4.5V 40 4V 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 120 100 80 60 40 TJ=125°C 20 TJ=25°C 0 0 5 10 15 20 25 0 Normalized to VGS=10V @ 50A 1.25 1.2 VGS=10V 1.15 1.1 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 50 RDS(on) vs Drain Current 1.3 VGS=20V 1.05 1 0.95 ID, DC Drain Current (A) 0.9 40 30 20 10 0 0 20 40 60 80 100 120 140 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 August, 2009 RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) 4–7 APTC60DHM45T1G – Rev 0 ID, Drain Current (A) 320 1.1 1.0 0.9 0.8 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.0 1.5 1.0 0.5 0.0 25 TJ, Junction Temperature (°C) 1000 1.0 ID, Drain Current (A) 0.9 0.8 0.7 limited by RDSon 100 100 µs 0.6 1 ms Single pulse TJ=150°C TC=25°C 10 10 ms 1 25 50 75 100 125 150 1 Coss Ciss 1000 Crss 10 0 1000 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 100 100 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) 10000 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 12 ID=50A TJ=25°C 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC) August, 2009 VGS(TH), Threshold Voltage (Normalized) 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1.1 C, Capacitance (pF) VGS=10V ID= 50A 2.5 5–7 APTC60DHM45T1G – Rev 0 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60DHM45T1G APTC60DHM45T1G Delay Times vs Current 140 Rise and Fall times vs Current 70 td(off) 100 VDS=400V RG=5Ω TJ=125°C L=100µH 80 60 40 VDS=400V RG=5Ω TJ=125°C L=100µH 60 tr and tf (ns) td(on) 20 50 tf 40 30 tr 20 10 0 0 0 10 20 30 40 50 60 70 80 0 10 20 ID, Drain Current (A) 1.6 Switching Energy (mJ) Eon 1.2 Eoff 0.8 0.4 VDS=400V ID=50A TJ=125°C L=100µH 2 1.5 60 70 80 Eoff Eon 1 0.5 0 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80 0 ZVS ZCS 200 VDS=400V D=50% RG=5Ω TJ=125°C TC=75°C 150 100 hard switching 50 IDR, Reverse Drain Current (A) Operating Frequency vs Drain Current 250 0 5 10 20 30 40 50 Gate Resistance (Ohms) 300 Frequency (kHz) 50 10 15 20 25 30 35 40 45 50 ID, Drain Current (A) www.microsemi.com Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) August, 2009 Switching Energy (mJ) VDS=400V RG=5Ω TJ=125°C L=100µH 40 Switching Energy vs Gate Resistance 2.5 Switching Energy vs Current 2 30 ID, Drain Current (A) 6–7 APTC60DHM45T1G – Rev 0 td(on) and td(off) (ns) 120 APTC60DHM45T1G Typical diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.4 1.2 0.9 1 0.7 0.8 0.5 0.6 0.3 0.4 0.1 0.05 0.2 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 100 TJ=125°C 60 40 20 TJ=25°C 0 0.0 0.5 1.0 1.5 2.0 2.5 125 60 A 100 30 A 75 15 A 50 3.0 0 200 TJ=125°C VR=400V 60 A 1.0 30 A 15 A 0.5 0.0 0 200 400 600 800 1000 1200 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) QRR vs. Current Rate Charge 1.5 600 800 1000 1200 IRRM vs. Current Rate of Charge 30 TJ=125°C VR=400V 25 60 A 20 15 30 A 15 A 10 5 0 0 200 -diF/dt (A/µs) 400 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage Max. Average Forward Current vs. Case Temp. 50 200 175 Duty Cycle = 0.5 TJ=175°C 40 150 IF(AV) (A) C, Capacitance (pF) 400 -diF/dt (A/µs) VF, Anode to Cathode Voltage (V) 125 100 75 50 30 20 August, 2009 80 TJ=125°C VR=400V 150 10 25 0 0 1 10 100 1000 VR, Reverse Voltage (V) 25 50 75 100 125 150 175 Case Temperature (°C) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7–7 APTC60DHM45T1G – Rev 0 IF, Forward Current (A) Trr vs. Current Rate of Charge 175 120