TI CSD17577Q3A Csd17577q3a 30-v n-channel nexfet power mosfet Datasheet

Sample &
Buy
Product
Folder
Support &
Community
Tools &
Software
Technical
Documents
CSD17577Q3A
SLPS515 – AUGUST 2014
CSD17577Q3A 30-V N-Channel NexFET™ Power MOSFET
1 Features
•
•
•
•
•
•
•
1
Product Summary
Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free
RoHS Compliant
Halogen Free
SON 3.3 mm × 3.3 mm Package
TA = 25°C
TYPICAL VALUE
Drain-to-Source Voltage
30
V
Qg
Gate Charge Total (4.5 V)
12
nC
Qgd
Gate Charge Gate-to-Drain
RDS(on)
Drain-to-Source On-Resistance
VGS(th)
Threshold Voltage
•
Point of Load Synchronous Buck in Networking,
Telecom, and Computing Systems
Optimized for Control, and Sync FET Applications
3 Description
This 30 V, 4.0 mΩ, SON 3.3 mm × 3.3 mm
NexFET™ power MOSFET is designed to minimize
resistance in power conversion applications.
Top Icon
4
mΩ
1.4
V
Qty
Media
Package
Ship
13-Inch Reel
CSD17577Q3AT
250
7-Inch Reel
SON 3.3 × 3.3 mm
Plastic Package
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VALUE
UNIT
VDS
Drain-to-Source Voltage
30
V
VGS
Gate-to-Source Voltage
±20
V
Continuous Drain Current (Package limited)
35
Continuous Drain Current (Silicon limited),
TC = 25°C
83
D
ID
S
2
7
D
IDM
4
VGS = 10 V
2500
8
G
mΩ
Device
1
3
nC
5.3
CSD17577Q3A
S
S
2.5
VGS = 4.5 V
Ordering Information(1)
2 Applications
•
UNIT
VDS
6
D
5
D
Continuous Drain Current (1)
19
Pulsed Drain Current (2)
239
Power Dissipation(1)
2.8
Power Dissipation, TC = 25°C
53
TJ,
Tstg
Operating Junction and
Storage Temperature Range
–55 to 150
°C
EAS
Avalanche Energy, single pulse
ID = 28 A, L = 0.1 mH, RG = 25 Ω
39
mJ
PD
D
A
P0093-01
A
W
(1) Typical RθJA = 50°C/W on a 1-inch2 , 2-oz. Cu pad on a
0.06-inch thick FR4 PCB.
(2) Max RθJC = 3.0°C/W, pulse duration ≤100 μs, duty cycle ≤1%
.
.
RDS(on) vs VGS
Gate Charge
10
TC = 25°C, I D = 16A
TC = 125°C, I D = 16A
18
VGS - Gate-to-Source Voltage (V)
RDS(on) - On-State Resistance (mΩ)
20
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
VGS - Gate-to- Source Voltage (V)
18
20
G001
ID = 16A
VDS = 15V
9
8
7
6
5
4
3
2
1
0
0
3
6
9
12
15
18
21
Qg - Gate Charge (nC)
24
27
30
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD17577Q3A
SLPS515 – AUGUST 2014
www.ti.com
Table of Contents
1
2
3
4
5
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Specifications.........................................................
6.1 Trademarks ............................................................... 7
6.2 Electrostatic Discharge Caution ................................ 7
6.3 Glossary .................................................................... 7
1
1
1
2
3
7
7.1
7.2
7.3
7.4
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6
Mechanical, Packaging, and Orderable
Information ............................................................. 8
Device and Documentation Support.................... 7
Q3A Package Dimensions ........................................ 8
Q3A Recommended PCB Pattern ............................ 9
Q3A Recommended Stencil Pattern ......................... 9
Q3A Tape and Reel Information ............................. 10
4 Revision History
2
DATE
REVISION
NOTES
August 2014
*
Initial release.
Submit Documentation Feedback
Copyright © 2014, Texas Instruments Incorporated
Product Folder Links: CSD17577Q3A
CSD17577Q3A
www.ti.com
SLPS515 – AUGUST 2014
5 Specifications
5.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-Source Voltage
VGS = 0 V, ID = 250 μA
IDSS
Drain-to-Source Leakage Current
VGS = 0 V, VDS = 24 V
1
μA
IGSS
Gate-to-Source Leakage Current
VDS = 0 V, VGS = 20 V
100
nA
VGS(th)
Gate-to-Source Threshold Voltage
VDS = VGS, ID = 250 μA
RDS(on)
Drain-to-Source On-Resistance
gƒs
Transconductance
30
1.1
V
1.4
1.8
V
VGS = 4.5 V, ID = 10 A
5.3
6.4
mΩ
VGS = 10 V, ID = 16 A
4
4.8
mΩ
VDS = 15 V, ID = 16 A
76
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
1780
2310
pF
208
270
pF
Crss
RG
Reverse Transfer Capacitance
79
103
pF
Series Gate Resistance
1.4
2.8
Ω
Qg
Gate Charge Total (4.5 V)
13
17
nC
Qg
Gate Charge Total (10 V)
27
35
nC
Qgd
Gate Charge Gate-to-Drain
Qgs
Gate Charge Gate-to-Source
Qg(th)
Gate Charge at Vth
Qoss
Output Charge
td(on)
Turn On Delay Time
tr
Rise Time
td(off)
Turn Off Delay Time
tƒ
Fall Time
VGS = 0 V, VDS = 15 V, ƒ = 1 MHz
VDS = 15 V, ID = 16 A
VDS = 15 V, VGS = 0 V
VDS = 15 V, VGS = 10 V,
IDS = 16 A, RG = 0 Ω
2.8
nC
5.1
nC
2.5
nC
6
nC
4
ns
31
ns
20
ns
4
ns
DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
ISD = 16 A, VGS = 0 V
0.8
VDS= 15 V, IF = 16 A,
di/dt = 300 A/μs
8.2
1
nC
V
8.6
ns
5.2 Thermal Information
(TA = 25°C unless otherwise stated)
THERMAL METRIC
MIN
TYP
MAX
RθJC
Junction-to-Case Thermal Resistance (1)
3.0
RθJA
Junction-to-Ambient Thermal Resistance (1) (2)
55
(1)
(2)
UNIT
°C/W
RθJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inches × 1.5-inches
(3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board
design.
Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
Submit Documentation Feedback
Copyright © 2014, Texas Instruments Incorporated
Product Folder Links: CSD17577Q3A
3
CSD17577Q3A
SLPS515 – AUGUST 2014
GATE
www.ti.com
GATE
Source
Source
Max RθJA = 55°C/W
when mounted on
1 inch2 (6.45 cm2) of
2-oz. (0.071-mm thick)
Cu.
Max RθJA = 190°C/W
when mounted on a
minimum pad area of
2-oz. (0.071-mm thick)
Cu.
DRAIN
DRAIN
M0161-02
M0161-01
5.3 Typical MOSFET Characteristics
(TA = 25°C unless otherwise stated)
Figure 1. Transient Thermal Impedance
4
Submit Documentation Feedback
Copyright © 2014, Texas Instruments Incorporated
Product Folder Links: CSD17577Q3A
CSD17577Q3A
www.ti.com
SLPS515 – AUGUST 2014
Typical MOSFET Characteristics (continued)
100
100
90
90
IDS - Drain-to-Source Current (A)
IDS - Drain-to-Source Current (A)
(TA = 25°C unless otherwise stated)
80
70
60
50
40
30
VGS =10V
VGS =6V
VGS =4.5V
20
10
0
0
0.1
0.2
0.3
0.4
0.5
0.6
VDS - Drain-to-Source Voltage (V)
0.7
80
70
60
50
40
30
10
0
0.8
TC = 125°C
TC = 25°C
TC = −55°C
20
0
0.5
1
1.5
2
2.5
3
VGS - Gate-to-Source Voltage (V)
G001
3.5
4
G001
VDS = 5 V
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
10000
9
8
C − Capacitance (pF)
VGS - Gate-to-Source Voltage (V)
10
7
6
5
4
3
1000
100
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
2
1
0
0
3
6
9
12
15
18
21
Qg - Gate Charge (nC)
ID = 16 A
24
27
10
30
0
3
6
G001
27
30
G001
VDS = 15 V
Figure 4. Gate Charge
Figure 5. Capacitance
2
20
RDS(on) - On-State Resistance (mΩ)
VGS(th) - Threshold Voltage (V)
9
12
15
18
21
24
VDS - Drain-to-Source Voltage (V)
1.8
1.6
1.4
1.2
1
0.8
0.6
−75 −50 −25
0
25
50
75 100 125 150 175
TC - Case Temperature (ºC)
G001
TC = 25°C, I D = 16A
TC = 125°C, I D = 16A
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
VGS - Gate-to- Source Voltage (V)
18
20
G001
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Resistance vs Gate-to-Source Voltage
Submit Documentation Feedback
Copyright © 2014, Texas Instruments Incorporated
Product Folder Links: CSD17577Q3A
5
CSD17577Q3A
SLPS515 – AUGUST 2014
www.ti.com
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
1.6
100
VGS = 4.5V
VGS = 10V
ISD − Source-to-Drain Current (A)
Normalized On-State Resistance
1.8
1.4
1.2
1
0.8
0.6
−75 −50 −25
0
25
50
75 100 125 150 175
TC - Case Temperature (ºC)
G001
TC = 25°C
TC = 125°C
10
1
0.1
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
VSD − Source-to-Drain Voltage (V)
1
G001
ID = 16 A
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
100
100
10
1
0.1
0.1
10us
100us
1ms
TC = 25ºC
TC = 125ºC
IAV - Peak Avalanche Current (A)
IDS - Drain-to-Source Current (A)
1000
10ms
DC
1
10
VDS - Drain-to-Source Voltage (V)
100
10
0.01
0.1
TAV - Time in Avalanche (mS)
G001
1
G001
Single Pulse,
Max RθJC = 3.0°C/W
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
IDS - Drain- to- Source Current (A)
40
35
30
25
20
15
10
5
0
−50
−25
0
25
50
75
100 125
TC - Case Temperature (ºC)
150
175
G001
Figure 12. Maximum Drain Current vs Temperature
6
Submit Documentation Feedback
Copyright © 2014, Texas Instruments Incorporated
Product Folder Links: CSD17577Q3A
CSD17577Q3A
www.ti.com
SLPS515 – AUGUST 2014
6 Device and Documentation Support
6.1 Trademarks
NexFET is a trademark of Texas Instruments.
6.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
6.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
Submit Documentation Feedback
Copyright © 2014, Texas Instruments Incorporated
Product Folder Links: CSD17577Q3A
7
CSD17577Q3A
SLPS515 – AUGUST 2014
www.ti.com
7 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
7.1 Q3A Package Dimensions
8
Submit Documentation Feedback
Copyright © 2014, Texas Instruments Incorporated
Product Folder Links: CSD17577Q3A
CSD17577Q3A
www.ti.com
SLPS515 – AUGUST 2014
7.2 Q3A Recommended PCB Pattern
For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through
PCB Layout Techniques.
7.3 Q3A Recommended Stencil Pattern
Submit Documentation Feedback
Copyright © 2014, Texas Instruments Incorporated
Product Folder Links: CSD17577Q3A
9
CSD17577Q3A
SLPS515 – AUGUST 2014
www.ti.com
1.75 ±0.10
7.4 Q3A Tape and Reel Information
4.00 ±0.10 (See Note 1)
Ø 1.50
+0.10
–0.00
1.30
3.60
5.50 ±0.05
12.00
+0.30
–0.10
8.00 ±0.10
2.00 ±0.05
3.60
M0144-01
Notes: 1. 10-sprocket hole-pitch cumulative tolerance ±0.2
2. Camber not to exceed 1 mm in 100 mm, noncumulative over 250 mm
3. Material: black static-dissipative polystyrene
4. All dimensions are in mm, unless otherwise specified.
5. Thickness: 0.30 ±0.05 mm
6. MSL1 260°C (IR and convection) PbF-reflow compatible
10
Submit Documentation Feedback
Copyright © 2014, Texas Instruments Incorporated
Product Folder Links: CSD17577Q3A
PACKAGE OPTION ADDENDUM
www.ti.com
11-Sep-2014
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
CSD17577Q3A
ACTIVE
VSONP
DNH
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
17577
CSD17577Q3AT
ACTIVE
VSONP
DNH
8
250
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
17577
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
11-Sep-2014
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
28-Aug-2014
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
CSD17577Q3A
VSONP
DNH
8
2500
330.0
12.4
CSD17577Q3AT
VSONP
DNH
8
250
180.0
12.4
Pack Materials-Page 1
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
3.6
3.6
1.2
8.0
12.0
Q1
3.6
3.6
1.2
8.0
12.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
28-Aug-2014
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
CSD17577Q3A
VSONP
DNH
8
2500
340.0
340.0
38.0
CSD17577Q3AT
VSONP
DNH
8
250
190.0
190.0
30.0
Pack Materials-Page 2
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other
changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest
issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and
complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale
supplied at the time of order acknowledgment.
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily
performed.
TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and
applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide
adequate design and operating safeguards.
TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or
other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information
published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or
endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the
third party, or a license from TI under the patents or other intellectual property of TI.
Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service
voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice.
TI is not responsible or liable for any such statements.
Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements
concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support
that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which
anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause
harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use
of any TI components in safety-critical applications.
In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to
help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and
requirements. Nonetheless, such components are subject to these terms.
No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties
have executed a special agreement specifically governing such use.
Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use in
military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components
which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and
regulatory requirements in connection with such use.
TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of
non-designated products, TI will not be responsible for any failure to meet ISO/TS16949.
Products
Applications
Audio
www.ti.com/audio
Automotive and Transportation
www.ti.com/automotive
Amplifiers
amplifier.ti.com
Communications and Telecom
www.ti.com/communications
Data Converters
dataconverter.ti.com
Computers and Peripherals
www.ti.com/computers
DLP® Products
www.dlp.com
Consumer Electronics
www.ti.com/consumer-apps
DSP
dsp.ti.com
Energy and Lighting
www.ti.com/energy
Clocks and Timers
www.ti.com/clocks
Industrial
www.ti.com/industrial
Interface
interface.ti.com
Medical
www.ti.com/medical
Logic
logic.ti.com
Security
www.ti.com/security
Power Mgmt
power.ti.com
Space, Avionics and Defense
www.ti.com/space-avionics-defense
Microcontrollers
microcontroller.ti.com
Video and Imaging
www.ti.com/video
RFID
www.ti-rfid.com
OMAP Applications Processors
www.ti.com/omap
TI E2E Community
e2e.ti.com
Wireless Connectivity
www.ti.com/wirelessconnectivity
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2014, Texas Instruments Incorporated
Similar pages