DMP26M7UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET ® POWERDI RDS(ON) Max ID Max TC = +25°C 6.7mΩ @ VGS = -4.5V -40A 9.0mΩ @ VGS = -2.5V -40A V(BR)DSS -20V Features Low RDS(ON) – ensures on state losses are minimized Small form factor thermally efficient package enables higher density end products Occupies just 33% of the board area occupied by SO-8 enabling smaller end product ESD HBM Protected up to 1KV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Case: POWERDI3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) Applications Load Switch Power Management Functions POWERDI3333-8 D Pin 1 S S S G G D D D S D Top View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number DMP26M7UFG-7 DMP26M7UFG-13 Notes: Case POWERDI3333-8 POWERDI3333-8 Packaging 2000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. YYWW Marking Information YYWW ADVANCE INFORMATION INFORMATION ADVANCE NEW PRODUCT Product Summary S42 S47 S42 or S47= Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 14 = 2014) WW = Week Code (01 to 53) POWERDI is a registered trademark of Diodes Incorporated DMP26M7UFG Document number: DS37944 Rev. 1 - 2 1 of 6 www.diodes.com April 2015 © Diodes Incorporated DMP26M7UFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION INFORMATION ADVANCE NEW PRODUCT Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -4.5V Steady State TA = +25°C TA = +70°C TC = +25°C Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 5) Avalanche Current (Note 7) L=0.1mH Avalanche Energy (Note 7) L=0.1mH Symbol VDSS VGSS Value -20 ±10 Unit V V ID -18.0 -14.5 -40 A IDM IS IAS EAS -80 -2.2 -23 28 A A A mJ Value 2.3 41 56 124 6.8 -55 to +150 Unit Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C TC = +25°C (Note 5) (Note 6) Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient PD RθJA Thermal Resistance, Junction to Case Operating and Storage Temperature Range RθJC TJ, TSTG W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 — — — — — — -1 ±100 V µA nA VGS = 0V, ID = -250µA VDS = -16V, VGS = 0V VGS = 8V, VDS = 0V VGS(TH) RDS(ON) VSD — 4.2 5.4 7 -0.7 -1.0 6.7 9.0 — -1.2 V Static Drain-Source On-Resistance -0.4 — — — — VDS = VGS, ID = -250µA VGS = -4.5V, ID = -15A VGS = -2.5V, ID = -10A VGS = -1.8V, ID = -1A VGS = 0V, IS = -10A Ciss Coss Crss RG Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — — 5940 835 728 3.0 75 156 8.8 22 10.7 23 121 109 60 47 — — — — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = -10V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDD = -10V, ID = -20A ns VGS = -4.5V, VDD = -10V, RG = 1Ω, ID = -10A ns nC IF = -10A, di/dt = 100A/µs IF = -10A, di/dt = 100A/µs 5. RθJA is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. RθJC is guaranteed by design while RθJA is determined by the user’s board design. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7 .UIS in production with L =0.1mH, TJ = +25°C 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated DMP26M7UFG Document number: DS37944 Rev. 1 - 2 2 of 6 www.diodes.com April 2015 © Diodes Incorporated DMP26M7UFG 30.0 30 VGS=-1.8V 25 VGS=-2.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS=-1.5V 20.0 VGS=-10V 15.0 10.0 VGS=-1.2V 5.0 20 15 10 TA=125℃ 5 0 0.0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0.012 0.01 VGS=-1.8V 0.008 VGS=-2.5V 0.006 0.004 0 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 VGS=-4.5V 0.002 0 TA=125℃ TA=150℃ 0.006 TA=85℃ TA=25℃ 0.004 TA=-55℃ 0.002 0 0 3 0.02 ID=-15A 0.015 0.01 0.005 ID=-10A 0 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.008 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.025 6 11 16 21 26 31 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage VGS=-4.5V TA=-55℃ 0.03 1 0.01 TA=85℃ TA=25℃ TA=150℃ RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ADVANCE INFORMATION INFORMATION ADVANCE NEW PRODUCT VDS=-5.0V VGS=-2.0V 25.0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature 2 3 4 5 6 7 8 9 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 10 2 VGS=-4.5V, ID=-15.0A 1.5 1 VGS=-2.5V, ID=-10.0A 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated DMP26M7UFG Document number: DS37944 Rev. 1 - 2 3 of 6 www.diodes.com April 2015 © Diodes Incorporated 0.015 0.012 0.009 1.2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VGS=-2.5V, ID=-10.0A 0.006 VGS=-4.5V, ID=-15.0A 0.003 0 1 0.8 ID=-1mA 0.6 0.2 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 30 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature CT, JUNCTION CAPACITANCE (pF) 100000 25 IS, SOURCE CURRENT (A) ID=-250μA 0.4 -50 VGS=0V, TA=125℃ 20 VGS=0V, TA=150℃ 15 VGS=0V, TA=85℃ 10 VGS=0V, TA=25℃ 5 VGS=0V, TA=-55℃ f=1MHz Ciss 10000 Coss 1000 Crss 100 0 10 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 10 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 20 1000 RDS(ON) Limited 9 7 6 5 VDS=-10V, ID=-20A 4 3 2 10 PW =10ms 1 0.1 1 0.01 0 0 20 40 60 80 100 Qg (nC) Figure 11. Gate Charge 120 140 160 PW =100μs PW =1ms 100 ID, DRAIN CURRENT (A) 8 VGS (V) ADVANCE INFORMATION INFORMATION ADVANCE NEW PRODUCT DMP26M7UFG PW =100ms TJ(MAX)=150℃ TA=25℃ Single Pulse DUT on 1*MRP board VGS=-4.5V 0.01 PW =1s PW =10s DC 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 POWERDI is a registered trademark of Diodes Incorporated DMP26M7UFG Document number: DS37944 Rev. 1 - 2 4 of 6 www.diodes.com April 2015 © Diodes Incorporated DMP26M7UFG ADVANCE INFORMATION INFORMATION ADVANCE NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.5 D=0.9 D=0.3 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t)=r(t) * RθJA RθJA=122℃/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. POWERDI3333-8 Dim Min Max Typ D 3.25 3.35 3.30 E 3.25 3.35 3.30 D2 2.22 2.32 2.27 E2 1.56 1.66 1.61 A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.20 L 0.35 0.45 0.40 L1 0.39 e 0.65 Z 0.515 All Dimensions in mm A A3 A1 D D2 L (4x) Pin 1 ID 1 4 b2 (4x) E E2 8 Z (4x) 5 e L1 (3x) b (8x) POWERDI is a registered trademark of Diodes Incorporated DMP26M7UFG Document number: DS37944 Rev. 1 - 2 5 of 6 www.diodes.com April 2015 © Diodes Incorporated DMP26M7UFG Suggested Pad Layout ADVANCE INFORMATION INFORMATION ADVANCE NEW PRODUCT Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X Dimensions C G G1 Y Y1 Y2 Y3 X X2 G 8 Y2 5 G1 Y1 Y 1 4 Y3 X2 Value (in mm) 0.650 0.230 0.420 3.700 2.250 1.850 0.700 2.370 0.420 C IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated DMP26M7UFG Document number: DS37944 Rev. 1 - 2 6 of 6 www.diodes.com April 2015 © Diodes Incorporated