Diodes DMN33D8LDW Dual n-channel enhancement mode mosfet Datasheet

DMN33D8LDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
NEW PRODUCT
NEW PRODUCT
ADVANCE
INFORMATION
V(BR)DSS
Features and Benefits
ID max
TA = +25°C
RDS(ON) max
3Ω @ VGS = 4.5V
5Ω @ VGS = 4.0V
7Ω @ VGS = 2.5V
30V
250 mA
200 mA
100 mA
Description
•
Low On-Resistance
•
Low Input Capacitance
•
Fast Switching Speed
•
ESD Protected Gate to 2kV
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 standards for High Reliability
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
Mechanical Data
ideal for high efficiency power management applications.
•
•
Case: SOT363
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Applications
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Motor Control
•
Terminal Connections Indicator: See diagram
•
Power Management Functions
•
•
DC-DC Converters
Terminals: Finish ⎯ Matte Tin annealed over Alloy42 leadframe.
Solderable per MIL-STD-202, Method 208 e3
•
Backlighting
•
Weight: 0.006 grams (approximate)
SOT363
D1
G2
S2
Q1
ESD PROTECTED
Q2
S1
Top View
G1
D2
Top View
Internal Schematic
Ordering Information (Note 4)
Part Number
DMN33D8LDW-7
DMN33D8LDW-13
Notes:
Case
SOT363
SOT363
Packaging
3K/Tape & Reel
10K/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html
Marking Information
N33 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Chengdu A/T Site
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Shanghai A/T Site
2012
Z
Feb
2
DMN33D8LDW
Document number: DS36754 Rev. 3 - 2
Mar
3
2013
A
Apr
4
May
5
2014
B
Jun
6
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2015
C
Jul
7
Aug
8
2016
D
Sep
9
Oct
O
2017
E
Nov
N
Dec
D
August 2014
© Diodes Incorporated
DMN33D8LDW
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
NEW PRODUCT
NEW PRODUCT
ADVANCE
INFORMATION
Drain-Source Voltage
Symbol
VDSS
Value
30
Units
V
Gate-Source Voltage
VGSS
±20
V
ID
250
200
mA
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle=1%)
IS
0.5
A
IDM
0.8
A
Value
0.35
0.22
360
126
-55 to 150
Units
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Symbol
TA = +25°C
TA = +70°C
Steady State
PD
RθJA
RθJC
TJ, TSTG
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
@TC = +25°C
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
30
—
—
—
—
—
—
1
±10
V
μA
μA
VGS = 0V, ID = 1mA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
—
—
—
—
—
—
—
—
1.5
2.4
3.0
5.0
7.0
20
1.2
V
|Yfs|
VSD
0.8
—
—
—
—
—
10
—
mS
V
VDS = 3V, ID = 100μA
VGS = 10V, ID = 250mA
VGS = 4.5V, ID = 250mA
VGS = 4.0V, ID = 10mA
VGS = 2.5V, ID = 5mA
VGS = 1.8V, ID = 5mA
VDS = 3V, ID = 10mA
VGS = 0V, IS = 115mA
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
—
—
—
—
—
—
—
—
—
—
—
—
48
11
8
57
0.55
1.23
0.14
0.14
2.9
2.6
18.2
13.6
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
RDS(ON)
Ω
Test Condition
VDS = 5V, VGS = 0V,
f = 1.0MHz
f=1MHz , Vgs=0V, Vds=0V
VGS = 10V, VDS = 10V,
ID = 250mA
VDD = 30V, VGS = 10V,
RG = 25Ω, ID = 200mA
5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMN33D8LDW
Document number: DS36754 Rev. 3 - 2
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© Diodes Incorporated
DMN33D8LDW
1
1.0
VDS = 5.0V
0.9
VGS = 10V
0.8
VGS = 4.5V
VGS = 2.5V
0.6
VGS = 3.5V
0.5
0.4
0.3
VGS = 2.0V
0.4
TA = 150°C
T A = 85°C
0.2
VGS = 1.8V
0.0
0
0.5
1
1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0
0
5
VGS = 2.5V
1
VGS = 4.0V
VGS = 4.5V
VGS = 10V
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
VGS = 10 V
ID = 500mA
1.5
VGS = 4.5V
ID = 250mA
1
0.5
0
-50
Document number: DS36754 Rev. 3 - 2
4
0.50
TA = 125°C
TA = 150°C
0.40
TA = 85°C
TA = 25°C
0.30
TA = -55°C
0.20
0.10
0.00
0
0.2
0.4
0.6
0.8
ID, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
1
0.5
0.4
VGS = 4.5V
ID = 250mA
0.3
VGS = 10V
ID = 500mA
0.2
0.1
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
DMN33D8LDW
T A = -55°C
1
2
3
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
VGS = 4.5V
0.8
2
TA = 25°C
0.60
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
10
0.01
0.6
TA = 125°C
0.1
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
0.7
0.2
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
NEW PRODUCT
ADVANCE
INFORMATION
0.8
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0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
August 2014
© Diodes Incorporated
1
1.8
0.9
1.6
0.8
1.4
IS, SOURCE CURRENT (A)
VGS(th), GATE THRESHOLD VOLTAGE (V)
2
ID = 1mA
1.2
ID = 250µA
1
0.8
0.6
0.4
0.2
0.7
TA = 150°C
0.6
TA = 25°C
0.5
TA = 125°C
0.4
T A = -55°C
0.3
T A = 85°C
0.2
0.1
0
-50
0
1000
10
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
f = 1MHz
VGS GATE THRESHOLD VOLTAGE (V)
CT, JUNCTION CAPACITANCE (pF)
100
Ciss
10
Coss
Crss
1
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
NEW PRODUCT
ADVANCE
INFORMATION
DMN33D8LDW
30
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
8
6
VDS = 10V
ID = 250mA
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
1.4
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RθJA(t) = r(t) * RθJA
RθJA = 415°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
0.0001
DMN33D8LDW
Document number: DS36754 Rev. 3 - 2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 11 Transient Thermal Resistance
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10
100
1000
August 2014
© Diodes Incorporated
DMN33D8LDW
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
NEW PRODUCT
NEW PRODUCT
ADVANCE
INFORMATION
A
SOT363
Dim Min Max Typ
A 0.10 0.30 0.25
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D
0.65 Typ
F 0.40 0.45 0.425
H 1.80 2.20 2.15
J
0
0.10 0.05
K 0.90 1.00 1.00
L 0.25 0.40 0.30
M 0.10 0.22 0.11
0°
8°
α
All Dimensions in mm
B C
H
K
M
J
D
L
F
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C2
Z
C2
Dimensions Value (in mm)
Z
2.5
G
1.3
X
0.42
Y
0.6
C1
1.9
C2
0.65
C1
G
Y
X
DMN33D8LDW
Document number: DS36754 Rev. 3 - 2
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DMN33D8LDW
NEW PRODUCT
NEW PRODUCT
ADVANCE
INFORMATION
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2014, Diodes Incorporated
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DMN33D8LDW
Document number: DS36754 Rev. 3 - 2
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