BTA10 Discrete Triacs(Isolated) T2 T2 G T2 T1 BTA10-200 BTA10-400 BTA10-600 BTA10-800 BTA10-1000 BTA10-1200 Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R G T1 VDRM/RRM VDSM/RSM V V 200 300 400 500 600 700 800 900 1000 1100 1200 1300 ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I²t dI/dt PG(AV) Tstg Tj Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 V Unit Parameter RMS on-state current (full sine wave) TO-220AB Tc = 105°C 10 A Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 60 Hz F = 50 Hz t = 16.7 ms t = 20 ms 100 105 A 55 A²s I²t Value for fusing Critical rate of rise of on-state current _ 100 ns I G = 2 x I GT , tr < tp = 10 ms VDSM/V RSM Non repetitive surge peak off-state voltage IGM Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Peak gate current F = 120 Hz Tj = 125°C 50 A/µs tp = 10 ms Tj = 25°C VDRM/VRRM V tp = 20 µs Tj = 125°C 4 A Tj = 125°C 1 W - 40 to + 150 - 40 to + 125 °C Average gate p ower diss ipation + 100 Storage junction temperature range Operating junction temperature range ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) SNUBBERLESS and LOGIC LEVEL(3 Quadrants) ■ Symbol IGT VGT Test Conditions VD = 12 V VGD VD = VDRM IH IT = 500 mA IL dV/dt (dI/dt)c P1 Quadrant RL = 33 Ω RL = 3.3 kΩ Tj = 125°C BTA Unit CW BW 35 50 mA I - II - III MAX. I - II - III MAX. 1.3 V I - II - III MIN. 0.2 V I - III IG = 1.2 IGT MAX. 35 50 mA MAX. 50 70 mA 60 80 II VD = 67 % VDRM gate open Tj = 125°C MIN. 500 1000 V/µs Without snubber MIN. 5.5 9.0 A/ms Tj = 125°C ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com BTA10 Discrete Triacs(Isolated) ■ STANDARD (4 Quadrants) Symbol Test Conditions IGT VD = 12 V VGT VGD VD = VDRM IH IT = 500 mA IL IG = 1.2 IGT Quadrant RL = 33 Ω RL = 3.3 Ω Value Unit I - II - III IV MAX. 50 100 mA ALL MAX. 1.3 V ALL MIN. 0.2 V MAX. 50 mA MAX. 50 Tj = 125°C I - III - IV II dV/dt (dV/dt)c mA 100 VD = 67 % VDRM gate open Tj = 125°C MIN. 400 V/µs (dI/dt)c =4.4 A/ms MIN. 10 V/µs Tj = 125°C STATIC CHARACTERISTICS Symbol Test Conditions tp = 380 µs Value Unit 1.55 V VTM ITM = 10 A Vto Threshold voltage Tj = 125°C MAX. 0.85 V Rd Dynamic resistance Tj = 125°C MAX. 40 mΩ IDRM VDRM = VRRM Tj = 25°C 5 µA 1 mA Tj = 25°C IRRM Tj = 125°C MAX. MAX. THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 1.5 °C/W Rth(j-a) Junction to ambient 60 °C/W PRODUCT SELECTOR Voltage (xxx) Part Number 200 V ~~ 100 V BTA10 X X Sensitivity Type Package 50 mA Standard TO-220AB Weight Base quantity Packing mode 2.3 g 250 Bulk OTHER INFORMATION Part Number BTA10 P2 Marking BTA10 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com BTA10 Discrete Triacs(Isolated) F ig. 1: Maximum power dis s ipation vers us R MS on-s ta te current (full cycle). F ig.2: R MS on-state current vers us cas e temperature (full cycle). P (W) 13 12 11 10 9 8 7 6 5 4 3 2 1 0 IT (R MS ) (A ) IT (R MS ) (A ) 0 1 2 3 4 5 6 7 8 9 10 F ig. 3 : R elative variation of thermal impeda nce versus pulse duration. 1E +0 12 11 10 9 8 7 6 5 4 3 2 1 0 B TB B TA T c (°C ) 0 25 F ig. 4 : values ). 50 On-s tate 75 100 cha racteris tics 125 (maximum IT M (A ) K =[Zth/R th] 100 1E -1 T j max T j max. V to = 0.85 V R d = 40 W m Zth(j-c ) 10 Zth(j-a) T j=25°C tp (s ) 1E -2 1E -3 1E -2 1E -1 V T M (V ) 1E +0 1E +1 1E +2 5E +2 F ig. 5 : S urge peak on-state current vers us number of cycles . 1 0.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 F ig. 6 : Non-repetitive s urge pea k on-s tate current for a s inus oidal puls e with width tp < 10ms, and corres ponding value of I²t. IT S M (A ),I²t (A ²s ) IT S M (A ) 110 100 90 80 70 60 50 40 30 20 10 0 1.0 1000 T j initial=25°C t=20ms dI/dt limitation: 50A /µs One cycle Non repetitive T j initial=25°C IT S M 100 I²t R epetitive T c=95°C tp (ms ) Number of ycles c 1 10 100 1000 10 0.01 0.10 1.00 10.00 www.sirectifier.com P3 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] BTA10 Discrete Triacs(Isolated) F ig. 7 : R ela tive variation of gate trigger current, holding current and latching current vers us junction temperature (typical values). 2.5 IG T,IH,IL [T j] / IG T ,IH,IL [T j=25°C ] 2.0 C 1.6 IG T 1.4 1.5 B 1.2 IH & IL B W/C W 1.0 0.8 0.5 0.6 T j(°C ) 0.0 -40 (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c 1.8 2.0 1.0 F ig.8 : R ela tive variation of critica l rate of decreas e of main current versus (dV /dt)c (typical values). -20 0 20 40 60 80 100 120 140 0.4 0.1 (dV /dt)c (V /µs ) 1.0 10.0 100.0 F ig. 9 : R elative varia tion of critical rate of decreas e of main current vers us junction temperature. (dI/dt)c [T j] / (dI/dt)c [T j s pec ified] 6 5 4 3 2 1 0 T j (°C ) 0 25 50 75 100 125 www.sirectifier.com P4 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]