AP11N50I-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
500V
RDS(ON)
0.68Ω
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
11A
S
Description
Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
G
D
TO-220CFM(I)
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage
+30
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
11
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
5.6
A
40
A
40
W
50
mJ
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
2
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
3.2
℃/W
65
℃/W
1
201401233
AP11N50I-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
3
Min.
Typ.
Max. Units
VGS=0V, ID=1mA
500
-
-
V
VGS=10V, ID=6A
-
-
0.68
Ω
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
9
-
S
IDSS
Drain-Source Leakage Current
VDS=400V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=6A
-
43
69
nC
Qgs
Gate-Source Charge
VDS=400V
-
8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
20
-
nC
td(on)
Turn-on Delay Time
VDD=250V
-
36
-
ns
tr
Rise Time
ID=6A
-
53
-
ns
td(off)
Turn-off Delay Time
RG=50Ω
-
230
-
ns
tf
Fall Time
VGS=10V
-
60
-
ns
Ciss
Input Capacitance
VGS=0V
-
1680 2600
pF
Coss
Output Capacitance
VDS=25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
15
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
3
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=6A, VGS=0V
-
-
1.5
V
trr
Reverse Recovery Time
IS=6A, VGS=0V
-
350
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
5
-
uC
Notes:
1.Pulse width limited by Max junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP11N50I-HF
12
20
o
12
8
5.0V
T C =150 C
10
ID , Drain Current (A)
10 V
7.0 V
6.0 V
16
ID , Drain Current (A)
10V
7.0 V
6.0 V
5.0V
o
T C =25 C
8
6
V G = 4.5V
4
4
V G = 4.5 V
2
0
0
0.0
4.0
8.0
12.0
16.0
20.0
24.0
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.8
1.2
I D =6A
V G =10V
2.4
Normalized RDS(ON)
Normalized BVDSS
1.1
1
2.0
1.6
1.2
0.9
0.8
0.4
0.8
-50
0
50
100
-50
150
o
0
50
100
150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Temperature
1.5
8
1.3
Normalized VGS(th)
10
T j =25 o C
T j =150 o C
IS(A)
6
4
1.1
0.9
0.7
2
0.5
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP11N50I-HF
10
I D =6A
V DS =400V
2400
8
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
3200
12
6
C iss
1600
4
800
2
0
0
0
10
20
30
40
50
1
60
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
C oss
C rss
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
100us
ID (A)
10
1ms
1
10ms
0.1
DC
T C =25 o C
Single Pulse
0.01
Normalized Thermal Response (Rthjc)
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
Single Pulse
0.01
1.00
10.00
100.00
1000.00
0.0001
0.001
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off)
tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4