MSTC110 Thyristor/Diode Modules VRRM / VDRM 800 to 1600V ITAV 110Amp Applications Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Circuit MSTC 1 2 3 Features 6 7 5 4 International standard package High Surge Capability Glass passivated chip Simple Mounting Heat transfer through aluminum oxide DCB ceramic isolated metal baseplate Module Type TYPE VRRM VRSM MSTC110-08 MSTC110-12 MSTC110-16 800V 1200V 1600V 900V 1300V 1700V Maximum Ratings Symbol Conditions Values Units ITAV Sine 180 ;Tc=85℃ o 110 A ITSM TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 2250 1900 A it TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 25000 18000 A2s Visol a.c.50HZ;r.m.s.;1min 3000 V -40 to 130 ℃ 2 Tvj Tstg -40 to 125 ℃ Mt To terminals(M5) 3±15% Nm Ms To heatsink(M6) 5±15% Nm di/dt TVJ= TVJM , 2/3VDRM ,IG =500mA Tr<0.5us,tp>6us 150 A/us dv/dt TJ= TVJM ,2/3VDRM, linear voltage rise 1000 V/us a Maximum allowable acceleration 50 m/s Weight Module(Approximately) 100 g 2 Thermal Characteristics Symbol Conditions Values Units Rth(j-c) Cont.;per thyristor / per module 0.28/0.14 ℃/W Rth(c-s) per thyristor / per module 0.2/0.1 ℃/W Document Number: MSTC110 Sep.06,2013 www.smsemi.com 1 MSTC110 Electrical Characteristics Symbol Conditions VTM T=25℃ ITM =300A IRRM/IDRM Min. Values Typ. Max. Units 1.72 V TVJ =TVJM ,VR=VRRM ,VD=VDRM 20 mA V rT For power-loss calculations only (TVJ =125℃) TVJ =TVJM 0.9 2 mΩ VGT TVJ =25℃ , VD =6V 3 V IGT TVJ =25℃ , VD =6V 150 mA VGD TVJ =125℃ , VD =2/3VDRM 0.25 V IGD TVJ =125℃ , VD =2/3VDRM 6 mA IL TVJ =25℃ , RG = 33 Ω 300 600 mA IH TVJ =25℃ , VD =6V 150 250 tgd TVJ =25℃, IG=1A, diG/dt=1A/us 1 mA us tq TVJ =TVJM 100 us VTO Document Number: MSTC110 Sep.06,2013 www.smsemi.com 2 MSTC110 Performance Curves 200 200 W rec.120 A sin.180 DC 150 DC 160 rec.60 120 rec.30 sin.180 100 rec.120 80 rec.60 50 rec.30 40 PTAV ITAVM 0 0 ITAV 50 100 A 150 0 0 Fig1. Power dissipation 50 100 2500 Zth(j-S) ℃/ W Zth(j-C) 0.25 0.001 t 0.01 0.1 1 10 S 100 50HZ A 1250 0 Fig3. Transient thermal impedance 10 100 ms 1000 Fig4. Max Non-Repetitive Forward Surge Current 300 A ℃ 130 Fig2.Forward Current Derating Curve 0.50 0 Tc 150 ℃ Typ. 125℃ 200 max. 100 25℃ IT 0 0 VTM 0.5 1.0 1.5 V 2.0 Fig5. Forward Characteristics Document Number: MSTC110 Sep.06,2013 www.smsemi.com 3 MSTC110 100 1/2·MSCT110 V 20V;20Ω 15 10 10 50 W (8 VGT 0W (0 m .5 m s) 0W (0 .1 m s) s) ∧ 1 VG Tvj IGT VGD125℃ 0.1 1.1 0.001 PG(tp) -40℃ 25℃ 125℃ IGD125℃ IG 0.01 0.1 1 10 A 100 Fig6. Gate trigger Characteristics Package Outline Information CASE: T1 × Dimensions in mm Document Number: MSTC110 Sep.06,2013 www.smsemi.com 4