DMP3035SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® V(BR)DSS Features and Benefits • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products -9.5 A • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product -8.5 A • • • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability RDS(ON) max ID max TA = 25°C 20mΩ @ VGS = -10V 29mΩ @ VGS = -5V -30V Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • • Case: POWERDI3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (approximate) • • Backlighting Power Management Functions DC-DC Converters • Drain Pin 1 S S S G Gate D D D Source D Top View Bottom View Internal Schematic Ordering Information (Note 4) Part Number DMP3035SFG-7 DMP3035SFG-13 Notes: Case POWERDI3333-8 POWERDI3333-8 Packaging 2000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information YYWW ADVANCE INFORMATION Product Summary P35 P35 = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 11 = 2011) WW = Week code (01 ~ 53) POWERDI is a registered trademark of Diodes Incorporated DMP3035SFG Document number: DS35440 Rev. 3 - 2 1 of 7 www.diodes.com May 2012 © Diodes Incorporated DMP3035SFG Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -10V TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C Steady State t<10s Continuous Drain Current (Note 6) VGS = -5V Steady State t<10s ID Value -30 ±25 -8.5 -6.7 ID -12.5 -10.0 A ID -7.0 -5.5 A Units V V A -10.0 -8.0 -70 -3.6 ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) IDM IS A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol PD Total Power Dissipation (Note 5) Steady state t<10s Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) RθJA PD Steady state t<10s Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range RθJA RθJC TJ, TSTG 100 Value 0.95 135 65 2.3 55 26 6.14 -55 to +150 Units W °C/W °C/W W °C/W °C/W °C/W °C 100 P(PK), PEAK TRANSIENT POIWER (W) PW = 10µs RDS(on) Limited -ID, DRAIN CURRENT (A) ADVANCE INFORMATION Maximum Ratings @TA = 25°C unless otherwise specified 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms PW = 1ms PW = 100µs 0.1 TJ(max) = 150°C TA = 25°C Single Pulse 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 SOA, Safe Operation Area 100 90 80 Single Pulse RθJA = 61°C/W RθJA(t) = r(t) * RθJA TJ - TA = P * RθJA(t) 70 60 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 2 Single Pulse Maximum Power Dissipation POWERDI is a registered trademark of Diodes Incorporated DMP3035SFG Document number: DS35440 Rev. 3 - 2 2 of 7 www.diodes.com May 2012 © Diodes Incorporated DMP3035SFG ADVANCE INFORMATION r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 54°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 3 Transient Thermal Resistance 10 100 1,000 Electrical Characteristics TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 - - -1.0 ±100 V μA nA VGS = 0V, ID = -250μA VDS = -30V, VGS = 0V VGS = ±25V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD -1.7 15 21 22 -0.74 -2.5 20 29 -1.0 V Static Drain-Source On-Resistance -1.0 - VDS = VGS, ID = -250μA VGS = -10V, ID = -8A VGS = -5V, ID = -5A VDS = -5V, ID = -10.0A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 1633 459 214 6.5 17 35.5 4.6 5.7 8.5 14 50 25.8 13 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge VGS = -4.5V Total Gate Charge VGS = -10V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = -15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -15V, VGS = -10V, ID = 8A VGEN = -10V, VDD = -15V, RGEN = 3Ω, ID = -15A 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated DMP3035SFG Document number: DS35440 Rev. 3 - 2 3 of 7 www.diodes.com May 2012 © Diodes Incorporated DMP3035SFG 30 30 VGS = 10V VGS = 4.5V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = 4.0V VGS = 3.5V 15 VGS = 3.0V 10 5 20 15 10 TA = 150°C TA = 125°C 5 VGS = 2.0V 0 0 0.5 1.0 1.5 -VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 4 Typical Output Characteristics 0 1.0 2.0 0.03 0.02 0.01 0 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.5 1.3 1.1 0.9 0.7 1.5 2.0 2.5 3.0 3.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 5 Typical Transfer Characteristics 4.0 0.05 VGS= -4.5V 0.04 TA = 150°C TA = 125°C 0.03 T A = 85°C TA = 25° C 0.02 T A = -55°C 0.01 0 0 30 1.7 0.5 -50 TA = 85°C TA = 25°C TA = -55°C VGS = 2.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω) RDS(ON),DRAIN-SOURCE ON-RESISTANCE(Ω) VDS = -5.0V 25 20 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) ADVANCE INFORMATION 25 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT (A) Fig. 7 Typical On-Resistance vs. Drain Current and Temperature 30 0.040 0.036 0.032 VGS = -5V ID = -5A 0.028 0.024 0.020 0.016 VGS = -10V ID = -10A 0.012 0.008 0.004 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 8 On-Resistance Variation with Temperature 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 9 On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated DMP3035SFG Document number: DS35440 Rev. 3 - 2 4 of 7 www.diodes.com May 2012 © Diodes Incorporated 30 2.5 25 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE(V) 3.0 2.0 1.5 1.0 0.5 20 15 10 5 0 -50 0 0.4 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 10 Gate Threshold Variation vs. Ambient Temperature 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 11 Diode Forward Voltage vs. Current 10,000 10,000 -IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) f = 1MHz Ciss 1,000 Coss TA = 150°C 1,000 TA = 125°C 100 T A = 85°C 10 Crss TA = 25°C 100 0 5 10 15 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Junction Capacitance 20 1 0 4 8 12 16 20 -VDS, DRAIN-SOURCE VOLTAGE(V) Fig. 13 Typical Drain-Source Leakage Current vs. Voltage 10 -VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION DMP3035SFG 8 6 4 2 0 0 5 10 15 20 25 30 35 Qg, TOTAL GATE CHARGE (nC) Fig. 14 Gate-Charge Characteristics 40 POWERDI is a registered trademark of Diodes Incorporated DMP3035SFG Document number: DS35440 Rev. 3 - 2 5 of 7 www.diodes.com May 2012 © Diodes Incorporated DMP3035SFG ADVANCE INFORMATION Package Outline Dimensions POWERDI3333-8 Dim Min Max Typ D 3.25 3.35 3.30 E 3.25 3.35 3.30 D2 2.22 2.32 2.27 E2 1.56 1.66 1.61 A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 0.203 − − b 0.27 0.37 0.32 b2 0.20 − − L 0.35 0.45 0.40 L1 0.39 − − e 0.65 − − Z 0.515 − − All Dimensions in mm A A3 A1 D D2 L (4x) 1 Pin 1 ID 4 b2 (4x) E E2 8 Z (4x) 5 e L1 (3x) b (8x) Suggested Pad Layout X G 8 Y2 5 G1 Y1 Y 1 4 Y3 X2 Dimensions C G G1 Y Y1 Y2 Y3 X X2 Value (in mm) 0.650 0.230 0.420 3.700 2.250 1.850 0.700 2.370 0.420 C POWERDI is a registered trademark of Diodes Incorporated DMP3035SFG Document number: DS35440 Rev. 3 - 2 6 of 7 www.diodes.com May 2012 © Diodes Incorporated DMP3035SFG ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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