LG DTA144TE/DTA144TUA/DTA144TCA DTA144TKA/DTA144TSA Digital Transistor(PNP) Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy PIN CONNENCTIONS AND MARKING DTA144TE SOT-523 DTA144TUA (1) Base (1)(1) Base Base (2) Emitter (2)(2) Emitter Emitter (3) Collector (3)(3) Collector Collector SOT-323 Addreviated symbol: 96 DTA144TKA (1) Base Addreviated symbol: 96 DTA144TCA DTA114ECA (1) Base (1) Base (2) Emitter (2) Emitter (3) Collector (3) Collector (2) Emitter (3) Collector SOT-23-3L SOT-23 Addreviated symbol: 96 Addreviated symbol: 96 DTA144TSA (1) Emitter (2) Collector (3) Base TO-92S Revision:20170301-P1 ht t p : // www.lgesem i .c o m mail:[email protected] LGDTA144TE/DTA144TUA/DTA144TCA DTA144TKA/DTA144TSA Digital Transistor(PNP) MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol LIMITS(DTA144T□) Parameter E UA KA Units CA SA VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -100 mA PC Collector Dissipation Tj Junction temperature TJ, Tstg Junction and Storage Temperature 150 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter unless 200 300 mW 150 ℃ -55~+150 ℃ otherwise conditions specified) Symbol Test MIN Collector-base breakdown voltage V(BR)CBO Ic=-50μA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.5 uA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.5 uA DC current gain hFE VCE=-5V,IC=-1mA 100 TYP 300 = IC=-5mA,IB -0.5mA VCE(sat) Collector-emitter saturation voltage Transition frequency fT Imput resistor R1 MAX 600 -0.3 VCE=-10V,IE=5mA, f=100MHz 250 32.9 47 UNIT V MHz 61.1 kΩ Typical Characteristics Revision:20170301-P2 ht t p : // www.lgesem i .c o m mail:[email protected]