MIXG240W1200TEH tentative X2PT IGBT Module VCES IC25 VCE(sat) = 1200 V = 370 A = 1.7 V 6-Pack + NTC iv e Part number MIXG240W1200TEH 28, 29, 30 54, 55, 56 T1 T3 D1 1 9 31 2 10 D3 5 6 18 D2 T4 D4 T6 13 21 14 22 nt 59, 60, 61 D5 42 43 44 at T2 32 36 37 38 D6 23, 24, 25 Features / Advantages: Applications: Package: E3-Pack • X2PT - 2nd generation Xtreme light Punch Through • Tvjm = 175°C • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged X2PT design results in: - short circuit rated for 10 μsec. - very low gate charge - low EMI - square RBSOA @ 2x Ic • Low VCE(sat) and low thermal resistance • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage • AC motor drives • Solar inverter • Medical equipment • Uninterruptible power supply • Air-conditioning systems • Welding equipment • Switched-mode and resonant-mode power supplies • Inductive heating, cookers • Pumps, Fans • Isolation Voltage: 4300 V~ • Industry standard outline • RoHS compliant • Base plate: Copper internally DCB isolated • Advanced power cycling te E72873 17 48 49 50 NTC T5 Option: • Phase Change Material printed on base plate Terms & Conditions of usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, test conditions and dimensions. © 2015 IXYS All rights reserved 20150909 1-5 MIXG240W1200TEH tentative Inverter IGBT Ratings Symbol Definitions VCES collector emitter voltage Conditions min. VGES VGEM max. DC gate voltage max. transient gate emitter voltage IC25 IC80 IC100 collector current Ptot total power dissipation VCE(sat) collector emitter saturation voltage IC = 200 A; VGE = 15 V TVJ = 25°C TVJ = 150°C VGE(th) gate emitter threshold voltage IC = 8 mA; VGE = VGE TVJ = 25°C ICES collector emitter leakage current VCE = VCES ; VGE = 0 V TVJ = 25°C TVJ = 150°C IGES gate emitter leakage current RG internal gate resistance Ciss Coss Crss input capacitance output capacitance reverse transfer (Miller) capacitance VCE = 100 V; VGS = 0 V; f = 1 MHz Qg Qgs Qgd total gate charge gate source charge gate drain (Miller) charge VCE = 600 V; VGE = 15 V; IC = 200 A td(on) tr td(off) tf Eon Eoff Erec(off) urn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse recovery losses at turn-off td(on) tr td(off) tf Eon Eoff Erec(off) turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse recovery losses at turn-off RBSOA ICM reverse bias safe operating area VGE = ±15 V; RG = 3.9 Ω VCEmax = 1200 V SCSOA tSC ISC short circuit safe operating area short circuit duration short circuit duration VCEmax = 1200 V VCE = 900 V; VGE = ±15 V non-repetitive RthJC RthJH thermal resistance junction to case thermal resistance junction to heatsink with heatsink compound; IXYS test setup TVJ = 25°C V V TC = 25°C TC = 80°C TC = 100°C 370 280 240 A A A TC = 25°C 1250 W 2 V V 7 V 0.2 mA mA 500 nA 1.7 2 5.5 e at Inductive switching VCE = 600 V; IC = 200 A VGE = ±15 V; RG = 3.9 Ω (external) nt te V +20 +30 iv VGE = ±20 V Inductive switching VCE = 600 V; IC = 200 A VGE = ±15 V; RG = 3.9 Ω (external) max. 1200 -20 -30 IXYS reserves the right to change limits, test conditions and dimensions. © 2015 IXYS All rights reserved typ. 2 2.0 Ω 10.6 nF pF pF 630 nC nC nC ns ns ns ns mJ mJ mJ TVJ = 25°C TVJ = 150°C 100 75 340 100 22 21 TVJ = 150°C TVJ = 150°C ns ns ns ns mJ mJ mJ 400 A 10 µs A 0.12 K/W K/W 900 0.18 20150909 2-5 MIXG240W1200TEH tentative Inverter Diode Ratings Symbol Definitions VRRM max. repetitive reverse voltage IF25 IF80 IF100 Conditions min. forward current 1200 V TC = 25°C TC = 80°C TC = 100°C 275 205 175 A A A 2.2 V V * mA mA forward voltage IR reverse current * not applicable, see Ices at IGBT QRM IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V -diF /dt = 3000 A/µs IF = 200 A QRM IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V -diF /dt = 3000 A/µs IF = 200 A RthJC RthJH thermal resistance junction to case thermal resistance junction to heatsink with heatsink compound; IXYS test setup Package Symbol IRMS E3-Pack Definitions Tstg Top TVJ storage temperature operation temperature virtual junction temperature IF = 200 A TVJ = 25°C TVJ = 150°C 1.9 VR = VRRM TVJ = 25°C TVJ = 150°C * e iv TVJ = 150°C at dSpp dSpb creepage distance on surface dApp dApb striking distance through air VISOL isolation voltage t = 1 second t = 1 minute Rpin-chip resistance pin to chip V = VCEsat + 2·R·IC resp. V = VF + 2·R·IF CP coupling capacity per switch between shorted pins of switch and back side metallization te nt mounting torque XXX XX-XXXXX Logo UL Part number Date Code Location K/W K/W min. Ratings typ. max. 300 Unit A -40 -40 -40 125 150 175 °C °C °C 6 Nm g 6 12 mm mm terminal to terminal terminal to backside 6 12 mm mm 4300 3600 V V mΩ pF Part number M I X G 240 W 1200 T EH = Module = IGBT = XPT IGBT = Gen 2 / std = Current Rating [A] = 6-pack = Reverse Voltage [V] = Thermistor = E3-Pack Part Name Marking on Product Standard MIXG240W1200TEH MIXG240W1200TEH Box 5 with Phase Change Material MIXG240W1200TEH -PC MIXG240W1200TEH Blister 12 © 2015 IXYS All rights reserved 0.21 terminal to terminal terminal to backside Ordering IXYS reserves the right to change limits, test conditions and dimensions. µC A ns mJ 0.33 3 50 / 60 Hz, RMS; IISOL < 1 mA YYWWx 24 210 350 12 270 MD 2D Data Matrix µC A ns mJ TVJ = 25°C Conditions per terminal Weight max. TVJ = 25°C VF RMS current typ. Delivering Mode Base Qty Ordering Code 517094 20150909 3-5 MIXG240W1200TEH tentative Equivalent Circuits for Simulation V0 I *on die level R0 IGBT V0 max threshold voltage R0 max slope resistance * V0 max threshold voltage R0 max slope resistance * FW Diode V TVJ = 125°C mW TVJ = 175°C 1.2 1.2 V 6.4 5.0 mW Temperature Sensor NTC Definitions Conditions min. typ. R25 resistance TVJ = 25°C 4.75 5.0 B25/50 temperature coefficient 105 104 kW K at R [Ω] 103 0 25 50 75 100 T C [°C ] 125 150 nt 102 5.25 iv 3375 max. Unit e Symbol te Typ. NTC resistance vs. temperature IXYS reserves the right to change limits, test conditions and dimensions. © 2015 IXYS All rights reserved 20150909 4-5 MIXG240W1200TEH tentative E3-Pack 50 49 48 iv e Outlines 44 43 42 38 37 36 32 31 30 54 29 55 at 28 56 25 59 24 60 23 61 5 6 9 10 13 14 17 18 21 22 te nt 1 2 28, 29, 30 54, 55, 56 T1 T3 D1 1 T5 D3 9 D5 17 31 2 10 NTC T2 32 18 48 49 50 42 43 44 D2 T4 D4 T6 5 13 21 6 14 22 59, 60, 61 IXYS reserves the right to change limits, test conditions and dimensions. © 2015 IXYS All rights reserved 36 37 38 D6 23, 24, 25 20150909 5-5