N-Channel MOSFET 600V, 9A, 0.80Ω Ω General Description Features These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. D @ VGS = 10V @ VGS = 10V Applications G VDS = 600V ID = 9.0A RDS(ON) ≤ 0.80Ω Power Supply PFC High Current, High Speed Switching S Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V 9.0* A 5.7* A 32* A 48 0.38 W o W/ C 4.8 mJ dv/dt 4.5 V/ns EAS 480 mJ TJ, Tstg -55~150 Symbol Rating RθJA 62.5 RθJC 2.62 o TC=25 C Continuous Drain Current(※) Pulsed Drain Current ID o TC=100 C (1) IDM o TC=25 C Power Dissipation o Derate above 25 C (1) Repetitive Avalanche Energy Peak Diode Recovery dv/dt PD EAR (3) (4) Single Pulse Avalanche Energy Junction and Storage Temperature Range o C ※ Id limited by maximum junction temperature Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Jan. 2012 Version 1.0 (1) (1) 1 Unit o C/W MagnaChip Semiconductor Ltd. MDF9N60B N-channel MOSFET 600V MDF9N60B Part Number Temp. Range MDF9N60BTH o -55~150 C Package Packing RoHS Status TO-220F Tube Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 600 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 - 4.0 Drain Cut-Off Current IDSS VDS = 600V, VGS = 0V - - 1 µA Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 4.5A gfs VDS = 30V, ID = 4.5A Forward Transconductance V 0.65 0.80 Ω - 7.0 - S - 23.9 Dynamic Characteristics Total Gate Charge Qg (3) Gate-Source Charge Qgs - 5.1 Gate-Drain Charge Qgd - 8.3 Input Capacitance Ciss - 1226 Reverse Transfer Capacitance Crss - 6.2 VDS = 480V, ID = 9.0A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 134 Turn-On Delay Time td(on) - 21.5 - 33.4 - 100.3 tf - 41.6 IS - 9 Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 10V, VDS = 300V, ID = 9.0A, (3) RG = 25Ω nC pF ns Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge VSD IS = 9.0A, VGS = 0V trr IF = 9.0A, dl/dt = 100A/µs - - A 1.4 V - 360 ns - 3.9 µC (3) Qrr Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤9.0A, di/dt≤200A/us, VDD≤BVDSS, Rg =25Ω, Starting TJ=25°C 4. L=10.8mH, IAS=9.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C, Jan. 2012 Version 1.0 2 MagnaChip Semiconductor Ltd. MDF9N60B N-channel MOSFET 600V Ordering Information MDF9N60B N-channel MOSFET 600V 20 Vgs=5.0V =5.5V =6.0V =6.5V =7.0V =10.0V =15.0V 12 1.0 RDS(ON) [Ω ] ID,Drain Current [A] 16 8 VGS=10.0V 0.8 VGS=20V Notes 1. 250㎲ Pulse Test 2. TC=25℃ 4 0 0.6 0 5 10 15 4 8 VDS,Drain-Source Voltage [V] ID,Drain Current [A] 3.0 1.2 BVDSS, (Normalized) Drain-Source Breakdown Voltage ※ Notes : RDS(ON), (Normalized) Drain-Source On-Resistance 16 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1. VGS = 10 V 2. ID = 4.5A 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 ※ Notes : 1. VGS = 0 V 2. ID = 250㎂ 1.1 1.0 0.9 0.8 -50 200 0 o IDR Reverse Drain Current [A] ID(A) -55℃ 0.1 4 6 150℃ 25℃ 1 0.1 0.0 8 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain Voltage [V] VGS [V] Fig.5 Transfer Characteristics Jan. 2012 Version 1.0 200 ※ Notes : 1. VGS = 0 V 2.250µs Pulse test 10 1 2 150 Fig.4 Breakdown Voltage Variation vs. Temperature * Notes ; 1. Vds=30V 25℃ 100 TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature 150℃ 50 o TJ, Junction Temperature [ C] 10 12 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDF9N60B N-channel MOSFET 600V 2500 10 ※ Note : ID = 9.0A VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss 120V 300V 480V 2000 Capacitance [pF] 8 6 4 Ciss 1500 1000 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss 2 500 0 0 4 8 12 16 20 24 0 28 1 QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics 10 10 VDS, Drain-Source Voltage [V] Fig.8 Capacitance Characteristics 2 Operation in This Area is Limited by R DS(on) 10 µs D=0.5 0 10 100 µs 1 0.2 1 ms Zθ JC(t), Thermal Response ID, Drain Current [A] 10 10 ms DC 1s 10 10 100 ms 0 0.1 0.05 -1 10 0.02 0.01 -1 Single Pulse TJ=Max rated TC=25℃ 10 single pulse -2 -2 10 10 -1 10 0 10 1 10 2 -5 10 -4 -3 10 -2 10 -1 10 0 10 10 1 10 t1, Rectangular Pulse Duration [sec] VDS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area Fig.10 Transient Thermal Response Curve 16000 10 single Pulse RthJC = 2.62℃/W TC = 25℃ 14000 8 ID, Drain Current [A] 12000 10000 Power (W) ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC RΘ JC=2.62℃/W 8000 6000 6 4 4000 2 2000 0 1E-5 0 1E-4 1E-3 0.01 0.1 1 25 10 75 100 125 150 Fig.12 Maximum Drain Current vs. Case Temperature Fig.11 Single Pulse Maximum Power Dissipation Jan. 2012 Version 1.0 50 TC, Case Temperature [℃] Pulse Width (s) 4 MagnaChip Semiconductor Ltd. 3 Leads, TO-220F Dimensions are in millimeters unless otherwise specified Symbol A b b1 C D E e F G L L1 Q Q1 ￠R Jan. 2012 Version 1.0 Min 4.50 0.63 1.15 0.33 15.47 9.60 Nom Max 4.93 0.91 1.47 0.63 16.13 10.71 2.54 2.34 6.48 12.24 2.79 2.52 3.10 3.00 2.84 6.90 13.72 3.67 2.96 3.50 3.55 5 MagnaChip Semiconductor Ltd. MDF9N60B N-channel MOSFET 600V Physical Dimensions U.S.A Sunnyvale Office 787 N. 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Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Jan. 2012 Version 1.0 6 MagnaChip Semiconductor Ltd. MDF9N60B N-channel MOSFET 600V Worldwide Sales Support Locations