Diodes DMP4015SPS 40v p-channel enhancement mode mosfet Datasheet

DMP4015SPS
40V P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Green
Product Summary
NEW PRODUCT
V(BR)DSS
-40V
Features and Benefits
ID
RDS(on) max
TA = +25°C
11mΩ @ VGS = -10V
-17.0A
15mΩ @ VGS = -4.5V
-14.5A






100% Unclamped Inductive Switch (UIS) Test In Production
Low On-Resistance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
Mechanical Data
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.


Applications



DC-DC Converters
Power management functions
Analog Switch




Pin1
®
Case: POWERDI 5060-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – 100% matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (approximate)
D
S
D
S
D
S
D
G
D
G
S
Top View
Pin Configuration
Bottom View
Internal Schematic
Top View
Ordering Information (Note 4 & 5)
Part Number
DMP4015SPS-13
DMP4015SPSQ-13
Notes:
Compliance
Standard
Automotive
Case
®
POWERDI 5060-8
®
POWERDI 5060-8
Packaging
2,500 / Tape & Reel
2,500 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
Marking Information
D
D
D
D
Logo
P4015SP
Part no.
YY WW
Xth week: 01 ~ 53
Year: “09”
2009
“13” = 2013
S
S
S
G
POWERDI is a registered trademark of Diodes Incorporated
DMP4015SPS
Document number: DS35518 Rev. 9 - 2
1 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMP4015SPS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
NEW PRODUCT
Continuous Drain Current (Note 6) VGS = -10V
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Steady
State
t<10s
Continuous Drain Current (Note 7) VGS = -10V
Steady
State
t<10s
ID
Value
-40
±25
-8.5
-6.8
ID
-13.0
-10.5
A
ID
-11.0
-8.7
A
A
-17.0
-13.5
-100
-3.5
-22
242
ID
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current (Note 7)
Avalanche Current (Note 8)
Avalanche Energy (Note 8)
Units
V
V
IDM
IS
IAS
EAS
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
TA = +25°C
TA = +70°C
Steady state
t<10s
TA = +25°C
TA = +70°C
Steady state
t<10s
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
PD
RθJA
PD
RθJA
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
RθJC
TJ, TSTG
Value
1.3
0.8
96.4
40.6
2.1
1.4
55.0
24.0
4.15
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-40






-1
100
µA
VGS(th)
Static Drain-Source On-Resistance
RDS (ON)
|Yfs|
VSD
-1.5




-2.0
7
9
26
-0.7
-2.5
11
15

-1.0
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf











4234
1036
526
7.77
47.5
14.2
13.5
13.2
10.0
302.7
137.9











Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
V
nA
V
mΩ
S
V
Test Condition
VGS = 0V, ID = -250μA
VDS = -40V, VGS = 0V
VGS = 25V, VDS = 0V
VDS = VGS, ID = -250A
VGS = -10V, ID = -9.8A
VGS = -4.5V, ID = -9.8A
VDS = -20V, ID = -9.8A
VGS = 0V, IS = -1A
pF
VDS = -20V, VGS = 0V
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = -20V, VGS = -5V
ID = -9.8A
ns
VGS = -10V, VDD = -20V, RG = 6Ω,
ID = -1A, RL = 20Ω
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
8. UIS in production with L = 0.1mH, TJ = +25°C
9 .Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.
POWERDI is a registered trademark of Diodes Incorporated
DMP4015SPS
Document number: DS35518 Rev. 9 - 2
2 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMP4015SPS
30
30
-VGS=4.0V
20
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
25
-VGS=3.5V
-VGS=4.5V
15
-VGS=10V
10
-VGS=3.0V
5
0
0
0.5
1
1.5
-VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
15
10
0.015
0.01
0.005
0
0
0
2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE()
RDS(ON),DRAIN-SOURCE ON-RESISTANCE()
20
5
0.02
0
5
10
15
20
25
-ID, DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
1.4
1.2
1
0.8
0.6
-50
0.5 1 1.5 2 2.5 3 3.5 4 4.5
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
0.02
5
T A = 150 C
-VGS= 4.5V
TA = 125C
0.015
TA = 85C
0.01
TA = 25C
TA = -55 C
0.005
0
0
5
10
15
20
25
30
-ID, DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
1.6
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Normalized)
NEW PRODUCT
25
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 5 On-Resistance Variation with Temperature
0.02
-VGS = 4.5V
-I D = 5.0A
0.016
0.012
0.008
VGS = 10V
ID = 10A
0.004
0
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 6 On-Resistance Variation with Temperature
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DMP4015SPS
Document number: DS35518 Rev. 9 - 2
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© Diodes Incorporated
30
2
25
-IS, SOURCE CURRENT (A)
-VGS(TH), GATE THRESHOLD VOLTAGE (V)
2.4
1.6
1.2
0.8
20
15
10
5
0.4
0
-50
0
0
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-25
1000
0.2
0.4
0.6
0.8
1
1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
-IDSS, LEAKAGE CURRENT (nA)
CT, JUNCTION CAPACITANCE (pF)
T A =150°C
CISS
COSS
100
CRSS
1000
5
10
15
20
25
TA =125°C
TA =85°C
100
10
TA =25°C
1
0.1
10
0
1.4
10000
f = 1MHz
5
10
15
20
25
30
-VDS, DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
30
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
10
0
90
600
8
6
4
2
80
500
70
EAS
400
60
50
300
40
IAS
200
30
20
100
IAS, AVALANCHE CURRENT (A)
EAS, AVALANCHE ENERGY (mJ)
Starting Temperature (TJ ) = 25°C
VGS, GATE-SOURCE VOLTAGE (V)
NEW PRODUCT
DMP4015SPS
10
0
0
20
40
60
80
100
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
120
0
0.1
0.2
0.3
0.4 0.5 0.6 0.7 0.8 0.9 1.0
INDUCTOR (mH)
Fig. 12 Single-Pulse Avalanche Tested
0
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DMP4015SPS
Document number: DS35518 Rev. 9 - 2
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November 2013
© Diodes Incorporated
DMP4015SPS
NEW PRODUCT
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
RJA(t) = r(t) * RJA
RJA = 97°C/W
D = 0.05
D = 0.02
0.01
P(pk)
D = 0.01
t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t 1/t2
D = 0.005
DUT mounted on FR-4 PCB with
minimum recommended pad layout
D = Single Pulse
0.001
0.001
t1
0.01
0.1
1
10
t1, PULSE DURATION TIME (s)
Fig. 13 Transient Thermal Response
100
1,000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
D
Detail A
D1
O (4X)
c
A1
E1 E
e
O (4X)
1
b (8X)
e/2
1
L
b2 (4X)
D3
A
K
D2
E3 E2
M
M1
Detail A
G
b3 (4X)
POWERDI5060-8
Dim Min
Max
Typ
A
0.90 1.10 1.00
A1
0.00 0.05
–
b
0.33 0.51 0.41
b2 0.200 0.350 0.273
b3
0.40 0.80 0.60
c
0.230 0.330 0.277
D
5.15 BSC
D1
4.70 5.10 4.90
D2
3.70 4.10 3.90
D3
3.90 4.30 4.10
E
6.15 BSC
E1
5.60 6.00 5.80
E2
3.28 3.68 3.48
E3
3.99 4.39 4.19
e
1.27 BSC
G
0.51 0.71 0.61
K
0.51
–
–
L
0.51 0.71 0.61
L1 0.050 0.20 0.175
M
3.235 4.035 3.635
M1
1.00 1.40 1.21
Θ
10º
12º
11º
Θ1
6º
8º
7º
All Dimensions in mm
L1
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DMP4015SPS
Document number: DS35518 Rev. 9 - 2
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November 2013
© Diodes Incorporated
DMP4015SPS
Suggested Pad Layout
4
X
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
2
Y
3
X
2
X
1
X
4
Y
7
Y
1
G
C
6
Y
x
4
Y
G
X
NEW PRODUCT
1
Y
3
Y
5
Y
Dimensions
C
G
G1
X
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
︵ ︶
Value (in mm)
1.270
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
POWERDI is a registered trademark of Diodes Incorporated
DMP4015SPS
Document number: DS35518 Rev. 9 - 2
6 of 6
www.diodes.com
November 2013
© Diodes Incorporated