AMMP-6522 7 to 20 GHz GaAs MMIC LNA/IRM Receiver in SMT Package Data Sheet Description Features Avago’s AMMP-6522 is an easy-to-use broadband integrated receiver in a surface mount package. The MMIC includes a 3-stage LNA to provide gain amplification and a gate-pumped image-reject mixer for frequency translation. The overall receiver performs Single Side Band down-conversion in the 7 to 20 GHz RF signal range. The LO and RF are matched to 50 Ω. The IF output is provided in 2-port format where an external 90-degree hybrid can be utilized for full image rejection. The LNA requires a 4 V, 75 mA power supply, where the mixer bias is a simple -1 V, 0.1 mA. The MMIC is fabricated using PHEMT technology. The surface mount package allows elimination of “chip & wire” assembly for lower cost. This MMIC is a cost effective alternative to multichip solution that have higher loss and complex assembly. •5x5 mm Surface Mount Package •Integrated Low Noise Amplifier •Integrated Image Reject Mixer •50 Ω Input and Output Match •Single Supply Bias Pin Package Diagram • Microwave radio systems • Satellite VSAT, DBS Up/Down Link • LMDS & Pt-Pt mmW Long Haul • Broadband Wireless Access (including 802.16 and 802.20 WiMax) • WLL and MMDS loops RF IF1 NC IF2 1 2 3 8 4 LO Specifications Vd = 4.0 V (75 mA), Vg = -1.0 V (0.1 mA) • RF frequency: 7 to 20 GHz •IF frequency: DC to 3.5 GHz •Conversion Gain (RF/IF): 13 dB •Input Intercept Point: -4 dBm •Image Suppression: 15 dB •Total Noise Figure: 2.4 dB Application Functional Block Diagram 1 7 6 5 Vd NC Vg 2 3 8 4 7 6 5 PIN 1 2 3 4 5 6 7 8 FUNCTION IF1 NC IF2 LO Vg NC Vd RF TOP VIEW PACKAGE BASE: GND Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) :40V ESD Human Body Model (Class 1A) :150V Refer to Avago Technologies Application Note A004R: Electrostatic Discharge, Damage and Control. Note: MSL Rating = Level 2A Electrical Specifications 1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C. 2. Pre-assembly into package performance verified 100% on-wafer per AMMC-6522 published specifications. 3. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies. 4. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Гopt) matching. 5. NF is measure on-wafer. Additional bond wires (-0.2nH) at Input could improve NF at some frequencies. Table 1. RF Electrical Characteristics TA=25°C, Vd=4.0V, Vg=-1V, Zo=50 Ω, LO=+15dBm, IF=2GHz [1] RF=8GHz, LO=10GHz Parameter Min Noise Figure into 50 Ω, NF Typ Max 2.6 3.3 RF=18GHz, LO=20GHz Min Typ Max Unit 3 3.3 dB Conversion Gain, CG 12 13 12 14 dB Input Third Order Intercept, IIP3 -8 -6 -5 -0.4 dBm Image Rejection, Sup 15 29 15 30 dB Comment Note: 1. All tested parameters are guaranteed with the following measurement accuracy: RF=8GHz: ±0.6dB for Conversion Gain, ±10dB for IRR, ±0.5dB for NF, ±0.8dBm for IIP3 RF=18GHz: ±1.8dB for Conversion Gain, ±1.6dB for IRR, ±0.6dB for NF, ±1.7dBm for IIP3 Table 2. Recommended Operating Range 1. Ambient operational temperature TA = 25°C unless otherwise noted. 2. Channel-to-backside Thermal Resistance (Tchannel (Tch) = 34°C) as measured using infrared microscopy. Thermal Resistance at backside temperature (Tb) = 25°C calculated from measured data. Description Min. Drain Supply Current, Id Typical Max. Unit Comments 75 95 mA Vd = 4.0 V Drain Supply Voltage, Vd 3 4 5 V Gate Supply Voltage, Vg -1.2 -1.0 -0.8 V RF Frequency, RFfreq 7 20 GHz LO Frequency, LOfreq 5 22 GHz IF Frequency, IFfreq [1] DC 3.5 GHz LO Drive Power, LO +10 +22 dBm +15 Note: 1. Use IF = DC with caution. Please see “Biasing and Operation” for more details. 2 Ig = 0.1mA Table 3. Thermal Properties Parameter Test Conditions Value Thermal Resistance, qjc Ambient operational temperature TA = 25°C Channel-to-backside Thermal Resistance Tchannel(Tch)=34°C Thermal Resistance at backside temperature Tb=25°C qjc = 27 °C/W Absolute Minimum and Maximum Ratings Table 4. Minimum and Maximum Ratings Description Pin Max. Unit Drain to Ground Supply Voltage, Vd 5.5 V Gate to Ground Voltage, Vg +0.8 V Drain Current , Id 100 mA Gate Current, Ig 1 mA RF CW Input Power, Pin 10 dBm Channel Temperature, Tch +150 °C +150 °C 260 °C Storage Temperature, Tstg Maximum Assembly Temperature, Tmax Min. -65 Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 3 Comments CW 20 second maximum AMMP-6522 Typical Performance[1,2] (TA = 25°C, Vd = 4 V, Id = 75 mA, Vg = -1 V, Ig = 0 mA, Zin = Zout = 50 Ω), IF Freq = 2 GHz, LO Power = +15 dBm unless noted) 20 5 4 LSB USB NOISE FIGURE (dB) CONV GAIN (dB) 10 0 -10 3 2 1 -20 6 8 10 12 14 16 18 0 20 6 8 10 FREQUENCY (GHz) 14 16 18 20 16 18 20 Figure 2. Typical noise figure Figure 1. Receiver conversion gain 0 5 -10 0 IIP3 (dBm) RETURN LOSS (dB) 12 FREQUENCY (GHz) -5 -20 RF LO -30 0 10 20 30 40 -10 50 6 8 10 12 14 FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Typical input IP3 Figure 3. Return loss at RF & LO ports 20 0 IIP3 (dBm) CONV GAIN (dB) -5 10 LSB USB 0 -10 -10 -15 -6 -2 2 6 10 14 -20 18 -5 0 5 LO POWER (dBm) 10 15 20 LO POWER (dBm) Figure 5. Conv gain vs. LO power (RF = 15 GHz) Figure 6. Input IP3 vs. LO power (RF = 15 GHz) 20 2 0 -2 IIP3 (dBm) CONV GAIN (dB) 15 10 0 6 8 10 12 14 16 FREQUENCY (GHz) Figure 7. LSB conversion gain at two IF frequencies 4 -6 IF = 1 GHz IF = 2 GHz 5 18 -4 IF = 1 GHz IF = 2 GHz -8 20 -10 6 8 10 12 14 FREQUENCY (GHz) Figure 8. Input IP3 at two IF frequencies 16 18 20 AMMP-6522 Typical Performance (cont.)[1,2] (TA = 25°C, Vd = 4 V, Id = 75 mA, Vg = -1 V, Ig = 0 mA, Zin = Zout = 50 Ω), IF Freq = 2 GHz, LO Power = +15 dBm unless noted) 18 2 0 INPUT IP3 (dBm) CONV GAIN (dB) 16 14 Vg = -1.2 V Vg = -1.1 V Vg = -1.0 V Vg = -0.9 V 12 10 6 8 10 12 14 -2 -4 -6 Vg = -1.2 V Vg = -1.1 V Vg = -1.0 V Vg = -0.9 V -8 16 18 -10 20 6 8 10 FREQUENCY (GHz) NOISE FIGURE (dB) CONV GAIN (dB) 20 4 10 4V 3V 5V 5 6 8 10 12 14 16 18 3 2 4V 3V 5V 1 0 20 6 8 10 FREQUENCY (GHz) 12 14 16 18 20 FREQUENCY (GHz) Figure 11. Receiver conversion gain over Vd Figure 12. Noise figure over Vd 0 5 -10 0 IIP3 (dBm) RETURN LOSS (dB) 18 5 15 -20 -5 25C -40C 85C 0 10 20 30 40 -10 50 4V 3V 5V 6 8 10 FREQUENCY (GHz) 12 14 16 18 20 16 18 20 FREQUENCY (GHz) Figure 13. Return loss at RF over temperature Figure 14. Input IP3 over Vd 5 0 25C -40C 85C 25C -40C 85C 4 NOISE FIGURE (dB) LO RETURN LOSS (dB) 16 FREQUENCY (GHz) 20 -30 14 Figure 10. Input IP3 over Vga Figure 9. Conversion gain over Vg 0 12 -10 -20 3 2 1 -30 0 10 20 30 FREQUENCY (GHz) Figure 15. Return loss at LO over temperature 40 50 0 6 8 10 12 14 FREQUENCY (GHz) Figure 16. Noise figure over temperature Notes: 1. S-parameters are measured with R&D Eval Board as shown in Figure 19. Board and connector effects are included in the data. 2. Noise Figure is measured with R&D Eval Board as shown in Figure 19, and with a 3-dB pad at input. Board and connector losses are already deembeded from the data. 5 Biasing and Operation The AMMP-6522 is normally biased with a positive drain supply connected to the Vd pin and a negative gate voltage connected to the Vg pin through bypass capacitors as shown in Figure 17. The recommended drain supply voltage is 4 V and gate bias voltage is -1 V. The corresponding currents are 75 mA and 0.1 mA respectively. The typical required LO level is +15 dBm and it should come from a low noise driver to ensure that overall Front End NF is low. The image rejection performance is dependent on the selection of the IF quadrature hybrid. The performance of the IF hybrid as well as the phase balance and VSWR of the interface to the AMMP-6522 will affect the overall front end performance. The recommended Vg is -1 V. However, depending on the operating frequency, Vg can be changed to achieve better performance for that particular frequency. Please refer to Figures 9 and 10 for how to best select the appropriate Vg for the intended frequency of operation. Theoretically IF frequencies can be as low as DC. However, when direct conversion is used (IF = DC), a so-called phenomenon DC-offset could occur at the two IF outputs. In most practical applications, IF should be more than a few hundreds kHz to avoid DC-offset correction. Refer the Absolute Maximum Ratings table for allowed DC and thermal condition. There is minimal performance degradation if Vdd is lowered to 3 V or raised to 5 V. If lower current is required, then Vd = 3 V will provide considerably similar RF performance. RF LSB USB IF RF IF LO 1000 pF Vd 1000 pF Vd IF1 NC NC Vg IF2 LO TOP VIEW LO +15 dBm 6 IF 1-3.5 GHz USB Vg Figure 17. Application of receiver with IF Balun LSB PACKAGE BASE: GND AMMP-6522 Part Number Ordering Information Part Number Devices per Container Container AMMP-6522-BLKG 10 Antistatic bag AMMP-6522-TR1G 100 7” Reel AMMP-6522-TR2G 500 7” Reel Package Dimension, PCB Layout and Tape and Reel information Please refer to Avago Technologies Application Note 5520, AMxP-xxxx production Assembly Process (Land Pattern A). For product information and a complete list of distributors, please go to our website: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2013 Avago Technologies. All rights reserved. AV02-0244EN - July 8, 2013