ON MVMBF0201NL Power mosfet Datasheet

MMBF0201NL,
MVMBF0201NL
Power MOSFET
300 mAmps, 20 Volts
N−Channel SOT−23
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These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in small power management circuitry. Typical applications are
d c −d c c o n v e r t e r s , p o w e r m a n a g e m e n t i n p o r t a b l e a n d
battery−powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
300 mAMPS − 20 VOLTS
RDS(on) = 1 W
N−Channel
3
Features
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature SOT−23 Surface Mount Package Saves Board Space
• MVMBF Prefix for Automotive and Other Applications Requiring
•
1
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
These Devices are Pb−Free and are RoHS Compliant
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
Vdc
Gate−to−Source Voltage − Continuous
VGS
± 20
Vdc
Rating
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 70°C
− Pulsed Drain Current (tp ≤ 10 ms)
mAdc
ID
ID
IDM
300
240
750
Total Power Dissipation @ TA = 25°C
PD
225
mW
Operating and Storage Temperature Range
TJ, Tstg
− 55 to 150
°C
Thermal Resistance, Junction−to−Ambient
RqJA
556
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
AND PIN ASSIGNMENT
3
3
Drain
1
N1 M G
G
2
SOT−23
CASE 318
STYLE 21
N1
M
G
1
Gate
2
Source
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
MMBF0201NLT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel
MVMBF0201NLT1G*
SOT−23
(Pb−Free)
3000 / Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1995
October, 2016 − Rev. 6
1
Publication Order Number:
MMBF0201NLT1/D
MMBF0201NL, MVMBF0201NL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
20
−
−
Vdc
−
−
−
−
1.0
10
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 mA)
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
−
−
±100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
VGS(th)
1.0
1.7
2.4
Vdc
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 300 mAdc)
(VGS = 4.5 Vdc, ID = 100 mAdc)
rDS(on)
−
−
0.75
1.0
1.0
1.4
gFS
−
450
−
mMhos
(VDS = 5.0 V)
Ciss
−
45
−
pF
Output Capacitance
(VDS = 5.0 V)
Coss
−
25
−
Transfer Capacitance
(VDG = 5.0 V)
Crss
−
5.0
−
td(on)
−
2.5
−
tr
−
2.5
−
td(off)
−
15
−
mAdc
ON CHARACTERISTICS (Note 1)
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
W
DYNAMIC CHARACTERISTICS
Input Capacitance
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 15 Vdc, ID = 300 mAdc,
RL = 50 W)
Fall Time
ns
tf
−
0.8
−
QT
−
1400
−
pC
IS
−
−
0.3
A
Pulsed Current
ISM
−
−
0.75
Forward Voltage (Note 2)
VSD
−
0.85
−
Gate Charge (See Figure 5)
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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2
MMBF0201NL, MVMBF0201NL
TYPICAL ELECTRICAL CHARACTERISTICS
1.0
1.0
I D , DRAIN CURRENT (AMPS)
0.8
0.6
0.4
125°C
0.2
0
-55°C
25°C
0
1
2
3
4
5
ON-RESISTANCE (OHMS)
VGS = 4 V
0.6
VGS = 10, 9, 8, 7, 6 V
0.4
0.2
VGS = 3 V
0
0.3
0.9
Figure 1. Transfer Characteristics
Figure 2. On−Region Characteristics
1.2
0.9
VGS = 4.5 V
0.6
VGS = 10 V
0
0.2
0.4
0.6
ID, DRAIN CURRENT (AMPS)
1
0.8
2.0
1.5
1.0
0.5
0
0
5
10
15
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1.10
14
1.05
ID = 250 mA
VGS(th) , NORMALIZED
1.00
VDS = 16 V
ID = 300 mA
10
20
Figure 4. On−Resistance versus
Gate−to−Source Voltage
16
12
1.4
2.4
Figure 3. On−Resistance versus Drain Current
8
6
4
0.95
0.90
0.85
0.80
0.75
0.70
2
0
0
1.2
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
0.3
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0.6
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1.5
0
0.8
0
6
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
I D , DRAIN CURRENT (AMPS)
VGS = 5 V
0.65
160
450
2000
0.60
-25
3400
0
25
50
75
100
125
Qg, TOTAL GATE CHARGE (pC)
TEMPERATURE (°C)
Figure 5. Gate Charge
Figure 6. Threshold Voltage Variance
Over Temperature
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3
150
MMBF0201NL, MVMBF0201NL
TYPICAL ELECTRICAL CHARACTERISTICS
100
1.6
VGS = 10 V @ 300 mA
C, CAPACITANCE (pF)
80
1.4
1.2
VGS = 4.5 V @ 100 mA
1.0
60
Ciss
40
Coss
20
0.8
Crss
0.6
-50
-25
0
25
50
75
100
125
0
150
0
5
10
15
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. On−Resistance versus
Junction Temperature
Figure 8. Capacitance
10
SOURCE CURRENT (AMPS)
RDS(on) , NORMALIZED (OHMS)
1.8
1.0
0.1
125°C
25°C
-55°C
0.01
0.001
0
0.3
0.6
0.9
1.2
SOURCE-TO-DRAIN FORWARD VOLTAGE (VOLTS)
Figure 9. Source−to−Drain Forward Voltage
versus Continuous Current (IS)
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4
1.4
20
MMBF0201NL, MVMBF0201NL
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0_
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 _
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0_
INCHES
NOM
MAX
0.039
0.044
0.002
0.004
0.017
0.020
0.006
0.008
0.114
0.120
0.051
0.055
0.075
0.080
0.017
0.022
0.021
0.027
0.094
0.104
−−−
10 _
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
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MMBF0201NLT1/D