AP10C150M
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
D2
D2
▼ Low Gate Charge
RDS(ON)
D1
D1
▼ Fast Switching Performance
100V
150mΩ
ID
▼ RoHS Compliant & Halogen-Free
SO-8
S1
S2
G1
G2
2.5A
P-CH BVDSS
-100V
RDS(ON)
160mΩ
ID
Description
AP10C150 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
-2.5A
D1
The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
D2
G2
G1
S1
S2
Absolute Maximum Ratings@Tj=25oC(unless
otherwise specified)
.
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
100
-100
V
+20
+20
V
Drain Current, VGS @ 10V
3
2.5
-2.5
A
Drain Current, VGS @ 10V
3
2.0
-2.0
A
10
-10
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
2
W
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Value
Unit
62.5
℃/W
1
201705191
AP10C150M
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
100
-
-
V
VGS=10V, ID=2A
-
-
150
mΩ
VGS=5V, ID=1A
-
-
250
mΩ
VGS=0V, ID=250uA
Max. Units
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance 2
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=2A
-
10
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=2A
-
11
17.6
nC
Qgs
Gate-Source Charge
VDS=50V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
2
-
nC
td(on)
Turn-on Delay Time
VDS=50V
-
7
-
ns
tr
Rise Time
ID=1A
-
4
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
16
-
ns
tf
Fall Time
VGS=10V
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
600
960
pF
Coss
Output Capacitance
VDS=50V
-
35
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
25
-
pF
Gate Resistance
f=1.0MHz
-
1.8
3.6
Ω
Min.
Typ.
IS=1.5A, VGS=0V
-
-
1.3
V
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=2A, VGS=0V
-
19
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
15
-
nC
2
AP10C150M
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Min.
Typ.
-100
-
-
V
VGS=-10V, ID=-2A
-
-
160
mΩ
VGS=-5V, ID=-1A
-
-
250
mΩ
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-2A
-
7.5
-
S
IDSS
Drain-Source Leakage Current
VDS=-80V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-2A
-
32
51.2
nC
Qgs
Gate-Source Charge
VDS=-50V
-
5.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
5
-
nC
td(on)
Turn-on Delay Time
VDS=-50V
-
12
-
ns
tr
Rise Time
ID=-1A
-
4
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
46
-
ns
tf
Fall Time
VGS=-10V
-
17
-
ns
Ciss
Input Capacitance
VGS=0V
-
Coss
Output Capacitance
VDS=-50V
-
60
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
45
-
pF
Gate Resistance
f=1.0MHz
-
6
12
Ω
Min.
Typ.
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance2
VGS(th)
Test Conditions
VGS=0V, ID=-250uA
.
Max. Units
1900 3040
pF
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-1.5A, VGS=0V
-
-
-1.3
V
trr
Reverse Recovery Time
IS=-2A, VGS=0V
-
25
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
33
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP10C150M
N-Channel
10
10
10V
7.0V
6.0V
5.0V
V G = 4.0V
ID , Drain Current (A)
8
8
6
4
2
6
4
2
0
0
0
1
2
3
0
4
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
112
I D =2A
V G =10V
I D = 1A
o
T A = 25 C
2.0
108
104
.
Normalized R DS(ON)
RDS(ON0 (mΩ)
10V
7.0V
6.0V
5.0V
V G =4.0V
T A =150 o C
ID , Drain Current (A)
T A =25 o C
1.6
1.2
0.8
100
30
0.4
96
-30
0.0
2
4
6
8
10
-100
-50
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
5
I D =1mA
4
IS(A)
T j =150 o C
Normalized VGS(th)
1.6
T j =25 o C
3
2
1
1.2
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP10C150M
N-Channel
f=1.0MHz
1000
ID=2A
V DS = 50 V
10
800
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C iss
600
400
4
200
2
C oss
C rss
0
0
0
4
8
12
1
16
21
41
61
81
101
121
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
ID (A)
Operation in this
area limited by
RDS(ON)
1
100us
1ms
0.1
.
10ms
100ms
0.01
T A =25 o C
Single Pulse
1s
DC
0.001
Normalized Thermal Response (R thja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
30
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
-30
Rthja=135 oC/W
0.001
0.1
1
10
100
1000
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5
AP10C150M
N-Channel
4
2.4
PD, Power Dissipation(W)
ID , Drain Current (A)
2
3
2
1
1.6
1.2
0.8
0.4
0
0
25
50
75
100
125
150
0
50
o
100
150
o
T A , Ambient Temperature ( C )
T A , Ambient Temperature( C)
Fig 13. Drain Current v.s. Ambient
Temperature
Fig 14. Total Power Dissipation
20
400
T j =25 o C
V DS =10V
RDS(ON) (mΩ)
200
.
5.0V
V GS = 10V
100
ID , Drain Current (A)
16
300
12
8
T j =150 o C
T j =25 o C
4
0
0
0
2
4
6
8
10
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
12
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 16. Transfer Characteristics
6
AP10C150M
P-Channel
10
10
-10V
-7.0V
-6.0V
-5.0V
V G = - 4.0V
-ID , Drain Current (A)
8
T A = 150 o C
8
-ID , Drain Current (A)
T A =25 o C
6
4
2
6
4
2
0
0
0
1
2
3
4
0
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.2
130
I D = -2 A
V G = - 10V
I D = -1 A
T A =25 o C
1.8
122
118
.
Normalized R DS(ON)
126
RDS(ON) (mΩ)
-10V
-7.0V
-6.0V
-5.0V
V G = - 4.0V
1.4
1.0
0.6
114
30
-30
0.2
110
2
4
6
8
-100
10
-50
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
5
I D = - 1mA
1.6
Normalized VGS(th)
-IS(A)
4
3
T j =150 o C
T j =25 o C
2
1
1.2
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
7
AP10C150M
P-Channel
f=1.0MHz
12
3200
I D = -2A
V DS = -50V
2400
C (pF)
-VGS , Gate to Source Voltage (V)
10
8
6
C iss
1600
4
800
2
0
C oss
C rss
0
0
10
20
30
40
1
21
Q G , Total Gate Charge (nC)
41
61
81
101
121
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
10
Operation in this
area limited by
RDS(ON)
100us
1ms
-ID (A)
1
0.1
.
10ms
100ms
0.01
T A =25 o C
Single Pulse
1s
DC
0.001
0.1
1
10
100
Normalized Thermal Response (R thja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Single Pulse
30
Rthja=135 oC/W
0.001
1000
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
-30
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
8
AP10C150M
P-Channel
4
2.4
PD, Power Dissipation(W)
-ID , Drain Current (A)
2
3
2
1
1.6
1.2
0.8
0.4
0
0
25
50
75
100
125
150
0
50
o
100
150
o
T A , Ambient Temperature ( C )
T A , Ambient Temperature( C)
Fig 13. Drain Current v.s. Ambient
Temperature
Fig 14. Total Power Dissipation
400
20
T j =25 o C
V DS = -10V
RDS(ON) (mΩ)
200
.
-5.0V
V GS = -10V
-ID , Drain Current (A)
16
300
12
8
T j =150 o C
100
T j =25 o C
4
0
0
0
2
4
6
8
10
-I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
12
0
1
2
3
4
5
6
-V GS , Gate-to-Source Voltage (V)
Fig 16. Transfer Characteristics
9
AP10C150M
MARKING INFORMATION
Part Number
10C150
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
10