Rohm BD8266EFV-M 4ch system motor driver for car audio Datasheet

Datasheet
System motor driver for CD/DVD Player
4ch System Motor Driver
for Car Audio
BD8266EFV-M
●General Description
BD8266EFV-M is BTL driver of 5 inputs and 4 outputs
for Car CDs developed for SPINDLE motor (CH1),
SLED/LOADING motor (CH2) and coil drive for
actuator(CH3:TRAKING CH4:FOCUS).
It can drive motor and coil of the CD/DVD drive.
●Key Specifications
Input voltage range:
Operating temperature range
4.5V to 10.0V
-40℃ to +85℃
PowVCC1=PowVCC2=8V, RL=8Ω
Maximum Output Amplitude (CH1)
Maximum Output Amplitude (CH2)
Maximum Output Amplitude (CH3,CH4)
●Features
 Drive at PowVCC=5V and 8V with wide Maximum
Output Amplitude .
 Switches SLED/LOADING input by CNT terminal.
 Incorporates mute function by CNT terminal and
MUTE terminal.
 Preventing the overcurrent to the load by the FOCUS
Over Current Protection (OCP) function.
 Built-in TSD, UVLO.
 PowVCC1 and PowVCC2 are independent,
and an efficient drive is possible.
PowVCC1 : for SPINDLE&SLED/LOADING.
PowVCC2 : for TRAKING & FOCUS.
 AEC-Q100 Qualified
PowVCC1=PowVCC2=5V, RL=8Ω
Maximum Output Amplitude (CH1)
Maximum Output Amplitude (CH2)
Maximum Output Amplitude (CH3,CH4)
●Package
HTSSOP-B24
6.5V(Typ.)
7.0V(Typ.)
6.0V(Typ.)
4.1V(Typ.)
4.5V(Typ.)
3.8V(Typ.)
W(Typ.) D(Typ.) H(Max.)
7.80mm x 7.60mm x 1.00mm
●Applications
 Car Audio
HTSSOP-B24
●Typical Application Circuit
DSP
24
23
IN1
CNT
22
IN2-1
21
IN2-2
20
19
18
17
16
BIAS
IN3
IN4
MUTE
PreGND
15
14
PRTC
VREG
13
PRTOUT
BD8266EFV-M
PowVcc1 PowGND1 VO1(-)
1
2
3
VO1(+)
VO2(-)
VO2(+)
VO3(-)
VO3(+)
VO4(-)
4
5
6
7
8
9
SPINDLE
MOTOR
CH1
SLED/LOADING
MOTOR
CH2
TRACKING
COIL
CH3
VO4(+) PowGND2 PowVCC2
10
11
12
FOCUS
COIL
CH4
Figure 1. Typical Application Circuit
○Product structure：Silicon monolithic integrated circuit
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© 2012 ROHM Co., Ltd. All rights reserved.
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○This product is not designed protection against radioactive rays
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BD8266EFV-M
●Pin Configuration
●Pin Description
(TOPVIEW)
(TOP VIEW)
PowVCC1
PowGND1
VO1(-)
VO1(+)
VO2(-)
VO2(+)
VO3(-)
VO3(+)
VO4(-)
VO4(+)
PowGND2
PowVCC2
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
IN1
CNT
IN2-1
IN2-2
BIAS
IN3
IN4
MUTE
PreGND
PRTC
VREG
PRTOUT
Figure 2. Pin Configuration
NO.
Signal
Function
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
PowVCC1
PowGND1
VO1(-)
VO1(+)
VO2(-)
CH1,2 Power Supply Input
Power GND1
Driver CH1 negative output
Driver CH1 positive output
Driver CH2 negative output
Driver CH2 positive output
Driver CH3 negative output
Driver CH3 positive output
Driver CH4 negative output
Driver CH4 positive output
Power GND2
CH3,4 Power Supply Input
Output overcurrent protection flag
Power output for internal logic
Overcurrent protection function ON time setting
Pre part GND
Mute
CH4 (FC:FOCUS) input
CH3 (TK:TRACKING) input
BIAS input
CH2-2 (LD:LOADING) input
CH2-1 (SL:SLED)input
Control input
IN1 (SP:SPINDLE)input
VO2(+)
VO3(-)
VO3(+)
VO4(-)
VO4(+)
PowGND2
PowVCC2
PRTOUT
VREG
PRTC
PreGND
MUTE
IN4
IN3
BIAS
IN2-2
IN2-1
CNT
IN1
●Block Diagram
CH1
CNT
CH2-1
CH2-2
BIAS
CH3
CH4
MUTE
PreGND
PRTC
VREG
24
23
22
21
20
19
18
17
16
15
14
13
Regulator
PreGND
MUTE
94kΩ
94kΩ
100kΩ
100kΩ
100kΩ
BIAS
50kΩ
50kΩ
20.75kΩ
1.65V
20.75kΩ
20.75kΩ
CNT
PRTOUT
OCP
UVLO
BIAS DROP MUTE
TSD
LEVEL SHIFT
LEVEL SHIFT
LEVEL SHIFT
LEVEL SHIFT
50kΩ
50kΩ
50kΩ
50kΩ
50kΩ
50kΩ
50kΩ
50kΩ
PowVCC1 PowGND1
50kΩ
50kΩ
50kΩ
50kΩ
PowVCC1 PowGND1
50kΩ
50kΩ
2
50kΩ
50kΩ
1
PowGND2
CH1
CH2
CH3
CH4
3
4
CH1
(SPINDLE)
5
6
7
CH2
(SLED/LOADING)
8
CH3
(TRACKING)
9
10
CH4
(FOCUS)
11
PowVCC2
12
PowGND2 PowVCC2
Figure 3. Block Diagram
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© 2012 ROHM Co., Ltd. All rights reserved.
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TSZ02201-0G1G0BK00070-1-2
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BD8266EFV-M
●Absolute Maximum Ratings(Ta=25℃)
Parameters
Power Supply
Symbol
Value
Units
PowVCC1
PowVCC2
15
V
Input Terminal Voltage 1
VIN1
*1
PowVCC1
V
Input Terminal Voltage 2
VIN2
*2
7
V
Output Terminal Voltage 1
VOUT1
*3
PowVCC1
V
Output Terminal Voltage 2
VOUT2
*4
7
V
Power dissipation
1.1
*5
4.0
*6
Pd
W
Operating temperature range
Topr
-40 to +85
℃
Storage temperature
Tstg
-55 to +150
℃
Junction temperature
Tjmax
+150
℃
*1
*2
*3
*4
*5
*6
VIN1 Application terminal：CNT, MUTE
VIN2 Application terminal：IN1, IN2-1, IN2-2, IN3, IN4, BIAS, PRTC
VOUT1 Application terminal：PRTOUT.
VOUT2 Application terminal：VREG.
70mm×70mm×1.6mm, occupied copper foil is less than 3%,one layer substrate(back copper foil 0mm×0mm)
Reduce power by 8.8mW for each degree above 25℃
70mm×70mm×1.6mm, occupied copper foil is less than 3%,four layer substrate(back copper foil 70mm×70mm)
Reduce power by 32.0mW for each degree above 25℃.
●Operating conditions（Ta=-40 to+85℃）
Parameters
Pre-block power supply voltage
*7
Spindle driver power-block power supply voltage
*7
Loading/Sled driver power-block power supply voltage
Actuator system power supply
*7
Voltage difference between PowVCC1 and PowVCC2
(PowVCC1–PowVCC2)
Symbol
Min.
Typ.
Max.
Units
PowVCC1
4.5
8.0
10.0
V
PowVCC2
4.5
8.0
PowVCC1
V
DiffPowVCC
0
-
3.5
V
*7 Please decide the power supply voltage after considering power dissipation.
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
3/23
TSZ02201-0G1G0BK00070-1-2
17.Aug.2016 Rev.010
BD8266EFV-M
●Electrical Characteristics （Unless otherwise noted, Ta=25℃,PowVCC1=PowVCC2=8V, BIAS=1.65V, RL=8Ω）
Parameter
Quiescent Current
Symbol
Limits
Unit
Min.
Typ.
Max.
IQ
－
16
40
mA
Condition
At no-load, MUTE=High
< Driver>
Output Offset
(CH1,2)
VOOF1
-100
0
100
mV
Output Offset
(CH3,4)
VOOF2
-50
0
50
mV
Maximum Output Amplitude (CH1)
VOM1
5.8
6.5
－
V
Maximum Output Amplitude (CH2)
VOM2
6.4
7.0
－
V
Maximum Output Amplitude(CH3,4)
VOM34
5.3
6.0
－
V
Closed Loop Gain (CH1,2)
GV12
24.0
25.7
27.4
dB
Closed Loop Gain (CH3,4)
GV34
15.5
17.5
19.5
dB
RON(total)=1.7Ω(Typ.)
Equivalent
RON(total)=0.9Ω(Typ.)
Equivalent
RON(total)=2.5Ω(Typ.)
Equivalent
Input Impedance
(CH1,2)
INRCH12
15
20.75
27
kΩ
Input Impedance
(CH3,4)
INRCH34
38
50
62
kΩ
MUTE Low Level Voltage
VML
－
－
0.5
V
MUTE High Level Voltage
VMH
2.0
－
－
V
MUTE Input Current
IMUTE
32
52
74
uA
CNT Low Level Voltage
VCNTL
－
－
0.5
V
CNT High Level Voltage
VCNTH
2.0
－
－
V
CNT Input Current
ICNT
32
52
74
μA
BIAS Drop Mute
VBD
0.5
0.7
0.9
V
BIAS Input Current
IBD
32
52
74
μA
BIAS=1.65V
VLDIN
－
0.1
0.3
V
CNT=Low
VBIN
1.53
1.65
1.77
V
CNT=High
UVLO Release Voltage
UVLOR
3.8
4.0
4.2
V
UVLO Detection Voltage
UVLOD
3.6
3.8
4.0
V
VREG Voltage
VREG
－
5.0
－
V
LDIN Voltage（SLED is input）
Internal Bias Voltage
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TSZ22111・15・001
4/23
MUTE=3.3V
CNT=3.3V
CVREG=0.1μF
TSZ02201-0G1G0BK00070-1-2
17.Aug.2016 Rev.010
BD8266EFV-M
●Electrical Characteristics （Unless otherwise noted, Ta=25℃,PowVCC1=PowVCC2=8V, BIAS=1.65V, RL=8Ω）
Parameter
Symbol
Limits
Min.
Typ.
Max.
Unit
Condition
< Focus overcurrent protection function >
PRTC Default Voltage
VPRTREF
－
0
0.3
V
PRTC Protection Detection Voltage
VPRTDET
2.7
3.0
3.3
V
PRTC Protection Release Voltage
VPRTOFF
0.7
1.0
1.3
V
PRTOUT Low Output Voltage
VPOL
－
0.1
0.3
V
OCP Detection Current
IOCP
－
470
－
mA
IPTCSINK
－
43
－
μA
PRTC SINK Current
●Electrical Characteristics
At no-load
PRTOUT：3.3V,33kΩ pullup
PRTC=1V
(Ta=25℃,PowVCC1=PowVCC2=5V, BIAS=1.65V, RL=8Ω)
Parameter
Symbol
Limits
Min.
Typ.
Max.
Unit
Maximum Output Amplitude (CH1)
VOM1
3.7
4.1
－
V
Maximum Output Amplitude (CH2)
VOM2
4.1
4.5
－
V
Maximum Output Amplitude(CH3,4)
VOM34
3.4
3.8
－
V
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
5/23
Condition
RON(total)=1.7Ω(Typ.)
Equivalent
RON(total)=0.9Ω(Typ.)
Equivalent
RON(total)=2.5Ω(Typ.)
Equivalent
TSZ02201-0G1G0BK00070-1-2
17.Aug.2016 Rev.010
BD8266EFV-M
●Electrical Characteristics （Unless otherwise noted, Ta=-40 to 85℃,PowVCC1=PowVCC2=8V, BIAS=1.65V, RL=8Ω）
Parameter
Quiescent Current
Symbol
Limits
Unit
Min.
Typ.
Max.
IQ
－
16
44
mA
Condition
At no-load, MUTE=High
< Driver>
Output Offset
(CH1,2)
VOOF1
-100
0
100
mV
Output Offset
(CH3,4)
VOOF2
-50
0
50
mV
Maximum Output Amplitude (CH1)
VOM1
5.5
6.5
－
V
Maximum Output Amplitude (CH2)
VOM2
6.4
7.0
－
V
Maximum Output Amplitude(CH3,4)
VOM34
4.8
6.0
－
V
Closed Loop Gain (CH1,2)
GV12
24.0
25.7
27.4
dB
Closed Loop Gain (CH3,4)
GV34
15.5
17.5
19.5
dB
RON(total)=1.7Ω(Typ.)
Equivalent
RON(total)=0.9Ω(Typ.)
Equivalent
RON(total)=2.5Ω(Typ.)
Equivalent
Input Impedance
(CH1,2)
INRCH12
11
20.75
29
kΩ
Input Impedance
(CH3,4)
INRCH34
34
50
66
kΩ
MUTE Low Level Voltage
VML
－
－
0.4
V
MUTE High Level Voltage
VMH
2.0
－
－
V
MUTE Input Current
IMUTE
22
52
108
μA
CNT Low Level Voltage
VCNTL
－
－
0.4
V
CNT High Level Voltage
VCNTH
2.0
－
－
V
CNT Input Current
ICNT
22
52
108
μA
BIAS=1.65V
BIAS Drop Mute
VBD
0.3
0.7
1.1
V
CNT=Low
BIAS Input Current
IBD
22
52
108
μA
CNT=High
VLDIN
－
0.1
0.3
V
VBIN
1.45
1.65
1.85
V
UVLO Release Voltage
UVLOR
3.7
4.0
4.3
V
UVLO Detection Voltage
UVLOD
3.5
3.8
4.1
V
VREG Voltage
VREG
－
5.0
－
V
LDIN Voltage（SLED is input）
Internal Bias Voltage
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TSZ22111・15・001
6/23
MUTE=3.3V
CNT=3.3V
CVREG=0.1μF
TSZ02201-0G1G0BK00070-1-2
17.Aug.2016 Rev.010
BD8266EFV-M
●Electrical Characteristics （Unless otherwise noted, Ta=-40 to 85℃,PowVCC1=PowVCC2=8V, BIAS=1.65V, RL=8Ω）
Parameter
Symbol
Limits
Min.
Typ.
Max.
Unit
Condition
< Focus overcurrent protection function >
PRTC Default Voltage
VPRTREF
－
0
0.3
V
PRTC Protection Detection Voltage
VPRTDET
2.5
3.0
3.5
V
PRTC Protection Release Voltage
VPRTOFF
0.5
1.0
1.5
V
PRTOUT Low Output Voltage
VPOL
－
0.1
0.4
V
OCP Detection Current
IOCP
－
470
－
mA
IPTCSINK
－
43
－
μA
PRTC SINK Current
At no-load
PRTOUT：3.3V,33kΩ pullup
PRTC=1V
●Electrical Characteristics （Unless otherwise noted, Ta=-40 to 85℃,PowVCC1=PowVCC2=5V, BIAS=1.65V, RL=8Ω）
Parameter
Symbol
Limits
Min.
Typ.
Max.
Unit
Maximum Output Amplitude (CH1)
VOM1
3.7
4.1
－
V
Maximum Output Amplitude (CH2)
VOM2
4.1
4.5
－
V
Maximum Output Amplitude(CH3,4)
VOM34
3.4
3.8
－
V
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TSZ22111・15・001
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Condition
RON(total)=1.7Ω(Typ.)
Equivalent
RON(total)=0.9Ω(Typ.)
Equivalent
RON(total)=2.5Ω(Typ.)
Equivalent
TSZ02201-0G1G0BK00070-1-2
17.Aug.2016 Rev.010
BD8266EFV-M
●Typical Performance Curves
VCC=4.5～10V
MUTE=CNT=3.3V
BIAS=1.65V
IN1～4=OPEN
Ta=25℃
30
OCP Detection Current : IOCP [mA]
Quiescent Current :IQ [mA]
40
20
10
0
4
6
8
10
530
450
VCC=8V
MUTE=CNT=3.3V
BIAS=1.65V
IN4=1.9V
Ta=-40℃～85℃
PRTC=1V
370
290
-60
12
-20
Supply Voltage :PowVCC1,2 [V]
20
60
100
Temperature [℃]
Figure 4. Quiescent Current
Figure 5. OCP Detection Current
OCP Detection Currnet : IOCP [mA]
PRTC Sink Current : IPTSINK [μA]
500
49
44
39
34
-60
VCC=8V
MUTE=CNT=3.3V
BIAS=1.65V
Ta=-40℃～85℃
PRTC=1V
475
450
VCC=8V
MUTE=CNT=3.3V
BIAS=1.65V
IN4=1.9V
Ta=-40℃～85℃
PRTC=1V
425
400
-20
20
60
100
Temperature [℃]
6
8
10
12
Supply Voltage :PowVCC1,2 [V]
Figure 7. OCP Detection Current
Figure 6. PRTC Sink Current
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TSZ02201-0G1G0BK00070-1-2
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BD8266EFV-M
●Typical Performance Curves
27
CH2 Input Output Gain [dB]
CH1 Input Output Gain [dB]
27
26
25
24
-60
VCC=8V
MUTE=CNT=3.3V
BIAS=1.65V
IN1=1.65V＋0.1V
Ta=-40℃～85℃
-20
20
60
26
25
24
-60
100
VCC=8V
MUTE=3.3V
CNT=0V
BIAS=1.65V
IN2-1=1.65V＋0.1V
Ta=-40℃～85℃
-20
19.5
19.5
VCC=8V
MUTE=CNT=3.3V
BIAS=1.65V
IN3=1.65V＋0.1V
Ta=-40℃～85℃
CH4 Input Output Gain [dB]
CH3 Input Output Gain [dB]
100
Figure 9. CH2 Closed Loop Gain
Figure 8. CH1 Closed Loop Gain
17.5
16.5
15.5
-60
60
Temperature [℃]
Temperature [℃]
18.5
20
-20
20
60
100
17.5
16.5
15.5
-60
-20
20
60
100
Temperature [℃]
Temperature [℃]
Figure 10. CH3 Closed Loop Gain
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
18.5
VCC=8V
MUTE=CNT=3.3V
BIAS=1.65V
IN4=1.65V＋0.1V
Ta=-40℃～85℃
Figure 11. CH4 Closed Loop Gain
9/23
TSZ02201-0G1G0BK00070-1-2
17.Aug.2016 Rev.010
BD8266EFV-M
●Typical Performance Curves
1.5
VCC=8V
Ta=-40℃～85℃
MUTE=CNT=3.3V
BIAS=1.65V
IN1=0V,3.3V
Io=500mA
2.0
CH2 Output Resistance [Ω]
CH1 Output Resistance [Ω]
2.5
1.5
1.0
0.5
VCC=8V
Ta=-40℃～85℃
MUTE=CNT=3.3V
BIAS=1.65V
IN2=0V,3.3V
Io=500mA
1.0
0.5
0.0
-60
-20
20
60
100
-60
Temperature [℃]
20
60
100
Temperature [℃]
Figure 12. CH1 Output ON resistance characteristic
Figure 13. CH2 Output ON resistance characteristic
4.0
4.0
VCC=8V
Ta=-40℃～85℃
MUTE=CNT=3.3V
BIAS=1.65V
IN3=0V,3.3V
Io=500mA
3.0
CH4 Output Resistance [Ω]
CH3 Output Resistance [Ω]
-20
2.0
1.0
0.0
VCC=8V
Ta=-40℃～85℃
MUTE=CNT=3.3V
BIAS=1.65V
IN4=0V,3.3V
Io=500mA
3.0
2.0
1.0
0.0
-60
-20
20
60
100
Temperature [℃]
-20
20
60
100
Temperature [℃]
Figure 14. CH3 Output ON resistance characteristic
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TSZ22111・15・001
-60
10/23
Figure 15. CH4 Output ON resistance characteristic
TSZ02201-0G1G0BK00070-1-2
17.Aug.2016 Rev.010
BD8266EFV-M
●Typical Performance Curves
2.0
Internal Bias Voltage: VBIN [V]
VREG Voltage: VREG [V]
6.0
5.5
5.0
VCC=8V
MUTE=CNT=3.3V
BIAS=1.65V
Ta=-40℃～85℃
4.5
4.0
1.8
1.5
VCC=8V
MUTE=CNT=3.3V
BIAS=1.65V
Ta=-40℃～85℃
1.3
1.0
-60
-20
20
60
100
-60
-20
Temperature [℃]
60
100
Temperature [℃]
Figure 17. Internal Bias Voltage
Figure 16. VREG Voltage
40
40
VCC=4.5～10V
MUTE=3.3V
CNT=3.3V
30 BIAS=1.65V
IN1～4=OPEN
Ta=25℃
VCC=4.5～10V
MUTE=3.3V
CNT=0V
BIAS=1.65V
IN1,2-1=GND
IN2-2,3,4=OPEN
Ta=25℃
Quiescent Current :IQ [mA]
Quiescent Current :IQ [mA]
20
20
10
0
VCC=4.5～10V
MUTE=3.3V
CNT=3.3V
BIAS=1.65V
IN1～4=OPEN
Ta=25℃
30
VCC=4.5～10V
MUTE=3.3V
CNT=0V
BIAS=1.65V
IN1,2-1,2-2=OPEN
IN3,4=GND
Ta=25℃
20
10
0
4
6
8
10
12
4
6
8
10
12
Supply Voltage :PowVCC1,2 [V]
Supply Voltage :PowVCC1,2 [V]
Figure 18. Quiescent Current at IN1~4=OPEN,
Circuit Current at IN1=IN2-1=GND
Figure 19. Quiescent Current at IN1~4=OPEN,
Circuit Current at IN3=IN4=GND
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BD8266EFV-M
●Operation description
1． The driver can put the mute by switching the terminal MUTE and the terminal CNT to High level and Low level.
The table below shows the logic.
▼Driver logic（Normally operation）
State
1
2
3
4
5
6
7
8
MUTE
H
H
L
L
H
H
L
L
Input
CNT
H
L
H
L
H
L
H
L
BIAS
H
H
H
H
L
L
L
L
CH1(SP)
Active
Active
MUTE
MUTE
MUTE
MUTE
MUTE
Hi-Z
CH2-1(SL)
MUTE
Active
MUTE
MUTE
MUTE
MUTE
MUTE
Hi-Z
Output *8*9
CH2-2(LD)
Active
MUTE
Active
MUTE
Active
MUTE
Active
Hi-Z
CH3(TK)
Active
Active
MUTE
MUTE
MUTE
MUTE
MUTE
Hi-Z
CH4(FC)
Active
Active
MUTE
MUTE
MUTE
MUTE
MUTE
Hi-Z
CH1(SP)
Active
Active
MUTE
MUTE
MUTE
MUTE
MUTE
Hi-Z
CH2-1(SL)
MUTE
Active
MUTE
MUTE
MUTE
MUTE
MUTE
Hi-Z
Output *8*9
CH2-2(LD)
Active
MUTE
Active
MUTE
Active
MUTE
Active
Hi-Z
CH3(TK)
MUTE
MUTE
MUTE
MUTE
MUTE
MUTE
MUTE
Hi-Z
CH4(FC)
MUTE
MUTE
MUTE
MUTE
MUTE
MUTE
MUTE
Hi-Z
CH1(SP)
Hi-Z
MUTE
CH2-1(SL)
Hi-Z
MUTE
Output *8*9
CH2-2(LD)
Hi-Z
MUTE
CH3(TK)
Hi-Z
MUTE
CH4(FC)
Hi-Z
MUTE
▼Driver logic（OCP Protected operation）
State
9
10
11
12
13
14
15
16
MUTE
H
H
L
L
H
H
L
L
Input
CNT
H
L
H
L
H
L
H
L
BIAS
H
H
H
H
L
L
L
L
▼Driver logic（UVLO,TSD Protected operation）
State
17
18
*8
*9
Input
MUTE
CNT
BIAS
L
L
L
The others state
MUTE ： Both positive and negative output voltages become PowVCC/2.
Hi-Z ： Both positive and negative outputs become Hi-Z.
2． BIAS drop mute function
BIAS terminal （Pin20） put the mute by 0.7V(Typ.) or less. Please make it to 1.3V or more in the normally operation.
3． UVLO function
Output current put the mute when PowVCC1 voltage becomes 3.8V(Typ.) or less. The driver part circuit stands up when
rising to 4.0V(typ.) again.
4． Voltage reference(VREG)
5V (Typ.) is generated from the PowVCC1 input voltage. Connect a capacitor (CVREG = 0.1μF Typ.) to the VREG terminal
for phase compensation. Operation may become unstable if CVREG is not connected.
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BD8266EFV-M
5． Focus overcurrent protection function
It is a function to turn off the actuator output when detecting the FOCUS(CH4) over current state more than set time.
When the load current that flows to FOCUS (CH4) output NMOS exceeds 470mA (Typ.), the current proportional to the
load current value is charged to the capacitor. The time to protection is decided depending on the capacitor value
connected with the terminal PRTC. The default value of the terminal PRTC is 0V (Typ.).
It protects with 3.0V (Typ.). (Please note that protection operates when the potential of 3.0V or more remains in the
terminal PRTC when the power supply starts, and the standby is released. It is likely to protect when the power supply is
started up in the slew rate of 1ms or less, and please start up the power supply in the slew rate of 1ms or more.)When
the terminal PRTC is 1.0V (Typ.) or less, protection is released.
Please delete C of the terminal PRTC and short-circuited with GND when the overcurrent function unused.
PRTOUT
(OUTPUT)
H
L
PRTC
>3.0V
<3.0V
CH3(TRAKING)Output
CH4(FOCUS)Output
MUTE（Protection state）
Active
ｔdischarge
Driver
Active
MUTE
Active
Protect
Circuit
Active
OCP mute
ON
OFF
discharge
Current of Capacitor
charge
470mA(Typ.)
Threshold
voltage=3.0V(Typ.)
0V(Typ.)
1.0V(Typ.)
PRTOUT
Voltage of capacitor
PRTC
Drive Current
OFF
Figure 20. OCP Timing Chart
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BD8266EFV-M
▼
Focus overcurrent protection circuit (OCP) setting
PowVCC2
Io
1/10930
Io
Current mirror
Io
Current mirror
Lower NMOS drive current is
detected as a load current.
FCO3.3V
33ｋΩ
Io
PRTOUT
Isource
TK,FC MUTE
PRTC(*)
Matrix
Io
CPRTC
: Road Current（FC)
3.0V or 1.0V
Isink
*Please delete C of the terminal PRTC, and
short-circuited with GND when the overcurrent
function unused.
Please set the terminal PRTOUT OPEN.
Figure 21. OCP Setting
PowVCC1=PowVCC2=8V,Ta=25℃
Isink = 43μA(Typ.)……①
Isource =
Io
……②
10930
Load current that begins to be detected It as over current (Threshold current)：It＝43μA×10930＝470mA(Typ.)
Error detection flag output time tdetective：The charge is started to CPRTC reaches 3.0V from 0V, and the time to becoming
PRTOUT =High.
CPRTC×VRTDET＝（Isource-Isink）×tdetective（VRTDET＝3.0V (Typ.) ）
∴tdetective=
CPRTC×VRTDET
Isource － Isink
CPRTC×VRTDET
∴tdetective=
Io
－
……③(∵①，②)
43μA
10930
When assuming tdetective=0.5s, Io=500mA as an example
③
tdetective
CPRTC =
VRTDET
×
Io
10930
－ 43 μA
=
0.5 s
3.0 V
500mA
×
10930
MUTE release time tdischarge : Electricity is discharged from CPRTC after it becomes
and time until the PRTC voltage drops from 3.0V to 1.0V.
－
43 μA
= 0.46 μF
PRTOUT =High
CPRTC× (VRTDET － VRTOFF) =Isink×tdischarge
∴tdischarge =
CPRTC× (VRTDET － VRTOFF)
Isink
∴tdischarge =
0.46μA×(3.0 V－1.0 V)
1.0)V
43μA
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BD8266EFV-M
6． Output Amplitude calculation
P)
SPINDLE,SLED/LOADING
VREF +
R2=100kΩ
100kΩ
RIN + 20.75kΩ
×2 ×(VIN -BAIS)
VIN
BIAS
VO+
R1=20.75kΩ
+
RIN
VO+
×2
Level
shift
IN
VREF
M
-
×2
VO-
VO-
*A
BIAS
VREF -
100kΩ
RIN + 20.75kΩ
100kΩ
RIN + 20.75kΩ
×2 ×(VIN -BAIS)
×2
VO = (VO+ ) - (VO- ) -> It is ×4 between the output
Figure 22. SPINDLE,SLED/LOADING Closed Loop Gain calculation
VO
Gain =
VIN
=
100kΩ
RIN + 20.75kΩ
*Please consider component dispersion
R1 = 20.75kΩ±18%
R2 = 100kΩ±18%
R2/R1 =4.82 ± 2.5%
*A=2+18%, 2-16%
×2×2
Example RIN = 0kΩ
100kΩ
20.75kΩ
Gain =
×2×2 = 25.7dB
ii)FOCUS,TACKING
VREF +
R4=94kΩ
VIN
BIAS
R3=50kΩ
+
×2 ×(VIN -BAIS)
VO+
VO+
Level
shift
IN
RIN
×2
94kΩ
RIN + 50kΩ
VREF
-
×2
VOVO-
*B
BIAS
VREF -
94kΩ
RIN + 50kΩ
94kΩ
RIN + 50kΩ
×2 ×(VIN -BAIS)
×2
VO = (VO+ ) - (VO- ) -> It is ×4 between the output
Figure 23. FOCUS, TRACKING Closed Loop Gain calculation
Gain =
VO
VIN
=
94kΩ
RIN + 50kΩ
*Please consider component dispersion
R3 = 50kΩ±18%
R4 = 94kΩ±18%
R4/R3 =1.88 ± 2.5%
*B=2+22%, 2-19%
×2×2
Example RIN = 0kΩ
Gain =
VO
VIN
=
94kΩ
50kΩ
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×2×2= 17.5dB
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BD8266EFV-M
●Typical Application Circuit
PreGND
SLED / LOADING
Control
SLED IN LOADING IN
PreGND
TRACKING IN FOCUS IN
SPINDLE IN
PreGND
PreGND
3.3V
MUTE
CPRTC
RPRTOUT
CVREG
24
23
22
21
20
19
18
17
16
15
14
13
IN1
CNT
IN2-1
IN2-2
BIAS
IN3
IN4
MUTE
PreGND
PRTC
VREG
PRTOUT
BD8266EFV-M
POWERGND
The back exposure heat radiation board
PowVCC1
CPVCC11 CPVCC12
PowGND1
1
2
VO1(-)
VO1(+)
VO2(-)
VO2(+)
VO3(-)
VO3(+)
VO4(-)
VO4(+)
3
4
5
6
7
8
9
10
M
PowVCC2
11
12
CPVCC21 CPVCC22
M
SPINDLE
POWERGND
PowGND2
SLED / LOADING
CH2
CH1
TRACKING
CH3
FOCUS
CH4
POWERGND
POWERGND
POWERGND
Figure 24. Typical Application Circuit Example
▼Channel example
CH1
SPINDLE
CH2
SLED/LOADING
CH3
TRACKING
CH4
FOCUS
▼External part list
Component name
Component value
Product name
Manufacturer
CPVCC11
0.1μF
GCM188R11H104KA42
murata
CPVCC12
47μF
UCD1E470MCL
Nichicon
CPVCC21
0.1μF
GCM188R11H104KA42
murata
CPVCC22
47μF
UCD1E470MCL
Nichicon
CPRTC
0.1μF~1μF
GCM188R11HxxxKA42
murata
CVREG
0.1μF
GCM188R11H104KA42
murata
RPRTOUT
33kΩ
MCR03 Series
Rohm
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BD8266EFV-M
PreGND
PreGND
SLED / LOADING
SLED IN LOADING IN
SPINDLE IN Control
PreGND
CVREG
MUTE
OPEN
24
23
22
21
20
19
18
17
16
15
14
13
IN1
CNT
IN2-1
IN2-2
BIAS
IN3
IN4
MUTE
PreGND
PRTC
VREG
PRTOUT
BD8266EFV-M
POWERGND
The back exposure heat radiation board
PowVCC1
PowGND1
1
VO1(-)
VO1(+)
VO2(-)
VO2(+)
VO3(-)
VO3(+)
VO4(-)
VO4(+)
3
4
5
6
7
8
9
10
OPEN
OPEN
OPEN
OPEN
2
CPVCC11 CPVCC12
M
PowVCC2
11
12
M
SPINDLE
CH1
SLED / LOADING
CH2
POWERGND
POWERGND
POWERGND
PowGND2
Figure 25. Application Circuit Example : CH1,CH2 are used, and CH3,CH4 are not used
PreGND
PreGND
PreGND
TRACKING IN FOCUS IN
PreGND
PreGND
3.3V
MUTE
OPEN
CPRTC
RPRTOUT
CVREG
24
23
22
21
20
19
18
17
16
15
14
13
IN1
CNT
IN2-1
IN2-2
BIAS
IN3
IN4
MUTE
PreGND
PRTC
VREG
PRTOUT
BD8266EFV-M
POWERGND
The back exposure heat radiation board
PowVCC1
1
PowGND1
2
VO1(-)
VO1(+)
VO2(-)
VO2(+)
VO3(-)
VO3(+)
VO4(-)
VO4(+)
3
4
5
6
7
8
9
10
OPEN
OPEN
OPEN
OPEN
11
PowVCC2
12
CPVCC21 CPVCC22
TRACKING
CH3
POWERGND
PowGND2
FOCUS
CH4
POWERGND
POWERGND
Figure 26. Application Circuit Example : CH1,CH2 are not used, and CH3,CH4 are used
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BD8266EFV-M
●Power dissipation
Figure 27. Power Dissipation
70mm×70mm×1.6mm, occupied copper foil is less than 3%, glass epoxy substrate,
The board and the back exposure heat radiation board part of package are connected with solder.
Board (1) : 1 layer board (copper foil 0mm × 0mm)
Board (2) : 2 layer board (copper foil 15mm × 15mm)
Board (3) : 2 layer board (copper foil 70mm × 70mm)
Board (4) : 4 layer board (copper foil 70mm × 70mm)
Board (1) : θja = 113.6 °C/W
Board (2) : θja = 73.5 °C/W
Board (3) : θja = 44.6 °C/W
Board (4) : θja = 31.3 °C/W
Under Ambient Temperature is 85℃
Board (1) :Pd =0.57W
Board (2) : Pd =0.88W
Board (3) : Pd =1.46W
Board (4) : Pd =2.08W
CAUTION: Pd depends on number of the PCB layer and area.
This value is measurement value.
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●I/O equivalence circuit
3. VO1- 4. VO1+ 5. VO2- 6. VO2+ 7. VO3- 8. VO3+ 9. VO4- 10. VO4+ 13. PRTOUT
PIN1
×2
PIN14
PIN12
×2
PIN14
5p
5p
2k
PIN3.4.5.6.
PIN14
50k
50k
50k
50k
PIN16
2k
PIN7.8.9.10
50k
PIN16
50k
PIN13
1k
PIN16
PIN11
PIN2
PIN16
PIN11
PIN2
15. PRTC
14. VREG
PIN1
17. MUTE
PIN1
PIN1
×2
200
PIN14
PIN14
50k
PIN15
PIN17
312k
50k
200
PIN16
PIN16
100k
10k
50k
10ｋ
PIN16
PIN16
PIN16
PIN16
20. BIAS
18. IN4 19. IN3
21. IN2-2
PIN14
PIN14
20k
PIN18
PIN19
PIN1
×2
20.75k
PIN21
50k
PIN20
PIN16
50k
×2
50k
PIN16
47k
PIN16
PIN16
PIN16
22. IN2-1 24. IN1
23. CNT
PIN1
PIN14
50k
PIN16
20.75k
PIN22
PIN24
PIN23
PIN16
50k
PIN16
※Values is typical .
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BD8266EFV-M
●Operational Note
1) Absolute maximum ratings
We are careful enough for quality control about this IC. So, there is no problem under normal operation, excluding that it
exceeds the absolute maximum ratings. However, this IC might be destroyed when the absolute maximum ratings, such
as impressed voltages or the operating temperature range, is exceeded, and whether the destruction is short circuit mode
or open circuit mode cannot be specified. Please take into consideration the physical countermeasures for safety, such as
fusing, if a particular mode that exceeds the absolute maximum rating is assumed.
2)
Reverse polarity connection
Connecting the power line to the IC in reverse polarity (from that recommended) will damage the part. Please utilize the
direction protection device as a diode in the supply line and motor coil line. Power supply line
3)
Power supply Line
Due to return of regenerative current by reverse electromotive force, using electrolytic and ceramic suppress filter
capacitors (0.1μF) close to the IC power input terminals (electric power supply and GND) are recommended. Please note
the electrolytic capacitor value decreases at lower temperatures and examine to dispensephysical measures for safety.
And, for ICs with more than one power supply, it is possible that rush current may flow instantaneously due to the internal
powering sequence and delays. Therefore, give special consideration to power coupling capacitance, power wiring, width
of GND wiring, and routing of wiring.
4)
GND line
Please keep the GND line the lowest potential always, and check the GND voltage
when transient voltages are connected to the IC.
5)
Thermal design
Do not exceed the power dissipation (Pd) of the package specification rating under actual operation, and please design
enough temperature margins .This product has exposed the frame to the back side of the package, but please note that it
is assumed to use heat radiation efficiency by the heat radiation for this part. Please take the heat radiation pattern on not
only the surface of the substrate but also the back of the substrate widely.
6)
Short circuit mode between terminals and wrong mounting
Do not mount the IC in the wrong direction and displacement, and be careful about the reverse-connection of the power
connector. Moreover, this IC might be destroyed when the dust short the terminals between them or GND.
7)
Radiation
Strong electromagnetic radiation can cause operation failures.
8)
ASO (Area of Safety Operation)
Do not exceed the maximum ASO and the absolute maximum ratings of the output driver.
9)
TSD (Thermal Shut-Down)
The TSD is activated when the junction temperature (Tj) exceeds 175℃, and the output terminal is switched to OPEN.
This protection have 25℃(Typ.) hysteresis .
The guarantee and protection of set are not purpose. Therefore, please do not use this IC after TSD circuit operates, nor
use it for assumption that operates the TSD circuit.
10) Capacitor between output driver and GND
If a large capacitor is connected between the output driver and GND, this IC might be destroyed when Vcc becomes 0V
or GND, because the electric charge accumulated in the capacitor flows to the output driver. Please set said capacitor to
smaller than 0.1μF.
11) Inspection by the set circuit board
The stress might hang to IC by connecting the capacitor to the terminal with low impedance. Then, please discharge
electricity in each and all process. Moreover, when attaching or detaching from jig in the inspection process, please turn
off the power before mounting the IC, and turn on after mounting the IC, and vice versa. In addition, please take into
consideration the countermeasures for electrostatic damage, such as giving the earth in assembly process, transportation
or preservation.
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BD8266EFV-M
12) Input terminal
+
This IC is a monolithic IC, and has P isolation and P substrate for the element separation. Therefore, a parasitic PN
junction is firmed in this P-layer and N-layer of each element. For instance, the resistor or the transistor is connected to
the terminal as shown in the figure below. When the GND voltage potential is greater than the voltage potential at
Terminals A on the resistor, at Terminal B on the transistor, the PN junction operates as a parasitic diode. In addition, the
parasitic NPN transistor is formed in said parasitic diode and the N layer of surrounding elements close to said parasitic
diode. These parasitic elements are formed in the IC because of the voltage relation. The parasitic element operating
causes the interference of circuit operation, then the wrong operation and destruction. Therefore, please be careful so as
not to operate the parasitic elements by impressing to input terminals lower voltage than GND (P substrate). Please do
not apply the voltage to the input terminal when the power-supply voltage is not impressed. Moreover, please impress
each input terminal lower than the power-supply voltage or equal to the specified range in the guaranteed voltage when
the power-supply voltage is impressing.
Figure 28. Example of IC Structure
13) Earth wiring pattern
If small signal GND and large current GND exist, disperse their pattern. In addition, for voltage change by pattern wiring
impedance and large current not to change voltage of small signal GND, each ground terminal of IC must be connected at
the one point on the set circuit board. As for GND of external parts, it is similar to the above-mentioned.
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BD8266EFV-M
●Ordering Information
B
D
8
2
6
6
Part Number
E
F
V
-
Package
EFV: HTSSOP-B24
M
E
2
Packaging
M: high reliability
E2:Embossed carrier tape
(HTSSOP-B24)
●Physical Dimension Tape and Reel Information
●Marking Diagram (TOP VIEW)
HTSSOP-B24 (TOP VIEW)
Part Number Marking
D8266EFV
LOT Number
1PIN MARK
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BD8266EFV-M
●Revision History
Date
Revision
30.May.2012
001
Changes
New Release
Page addition P6-7 Electrical Characteristic for -40℃ to 85℃
Page addition P8-11 Typical Performance Curves
Page addition P15 Gain calculation
30.Aug.2012
8.Nov.2012
005
Reviseddition P1 Typical Application Circuit
Reviceddition P2 Pin Description & Block Diagram
Reviceddition P4 Term addition in Electrical Characteristic(s)
Reviceddition P5 Term addition in Electrical Characteristic(s)Reviceddition
Reviceddition P12 Additional table for Driver logic（OPU Protected operation）
Reviceddition P12 VREG explanation
Reviceddition P13-14 Constant symbol
Reviceddition P16 Block Diagram
Reviceddition P16 Table addition for Channel example and External constant
Reviceddition P17 Power dissipation at 85℃
Reviceddition P22 Revision History Re
Revise
Input resistant (IN1,IN2-1,IN2-2)21kΩ -> 20.75 kΩ
Revice
Input resistant (IN3,IN4)47kΩ-> 50kΩ
P4,P6 Symbol of BIAS Input Current change VBD ->IBD
P14 Equation ③ unit change μA -> μF
P15 Revice eauation VO of Figure 20. And Figure 21.
P16 External part list change
P20 VCC-> electric power supply and
P20 add T.S.D explanation
006
Change Symbol ‘H’ ->High
Change Symblo ‘L’ ->Low
Change Symblo u ->μ
Change Symblo typ. ->Typ.
13.Jun.2013
007
27.Aug.2013
008
24.Apr.2014
009
17.Aug.2016
Revise
P.21 Physical Dimension
Revise
P.12 Change the name OPU -> OCP
P.14 Add the parenthesis and CPRTC in the calculation.
Revise
P.1 Add the sentence of AEC-Q100 Qualified at the features
P.20 Delete the sentence of status of this document
Revise
P.3 Add DiffPowVCC at operating conditions
P.11 Add Figure18, 19
P.17 Add Figure25, 26
Update of figure number
Correction of other errors
010
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Notice
Precaution on using ROHM Products
1.
(Note 1)
If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment
,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PAA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.003
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2.
ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PAA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.003
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
Datasheet
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