Spec. No. : C086I3 Issued Date : 2015.10.05 Revised Date : Page No. : 1/10 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN6T62KI3S BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=2.8A 620V 5.5A 1Ω(typ) Features • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • ESD Protected Gate • RoHS compliant package Symbol Outline MTN6T62KI3S TO-251S G D S G：Gate D：Drain S：Source Ordering Information Device MTN6T62KI3S-0-UA-G Package TO-251S (RoHS compliant and halogen-free package) Shipping 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UA : 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name MTN6T62KI3S CYStek Product Specification Spec. No. : C086I3 Issued Date : 2015.10.05 Revised Date : Page No. : 2/10 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V Continuous Drain Current @TC=100°C, VGS=10V Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Total Power Dissipation (TA=25℃) Total Power Dissipation (TC=25℃) Linear Derating Factor Gate Source ESD susceptibility (R=1.5kΩ, C=100pF) Operating Junction and Storage Temperature VDS VGS IDM EAS IAS EAR 620 ±25 5.5 3.5 22 151 5.5 9 mJ A mJ TL 300 °C 1.25 90 0.72 2000 -55~+150 W W W/°C V °C ID PD VESD(G-S) Tj, Tstg Unit V A Note : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=5.5A, VDD=50V, L=10mH, VGS=10V, starting TJ=+25℃. 100% tested by conditions of L=10mH, IAS=2A, VGS=10V, VDD=50V. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 1.4 100 Unit °C/W Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf MTN6T62KI3S Min. Typ. Max. Unit Test Conditions 620 3.0 - 0.6 7.2 1.0 4.5 ±9 1 50 1.2 V V/°C V S Ω VGS=0V, ID=250μA, Tj=25℃ Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =10V, ID=3A VGS=±20V VDS =620V, VGS =0V VDS =620V, VGS =0V, TC=125°C VGS =10V, ID=2.8A - 32.4 7.6 14.4 18.4 14.6 45.2 25.8 - nC ID=5.5A, VDD=496V, VGS=10V ns VDS=310V, ID=2.75A, VGS=10V, RG=4.7Ω μA CYStek Product Specification CYStech Electronics Corp. Ciss Coss Crss Rg Source-Drain Diode *IS *ISM *VSD *trr *Qrr Gate-Source Zener Diode 25 BVGSO 1214 73 31 5.1 - 0.82 320 1.6 5.5 22 1.5 - V ns μC - - V Spec. No. : C086I3 Issued Date : 2015.10.05 Revised Date : Page No. : 3/10 pF VGS=0V, VDS=30V, f=1MHz Ω f=1MHz A IS=5.5A, VGS=0V VGS=0V, IF=5.5A, dIF/dt=100A/μs IGS=±1mA *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTN6T62KI3S CYStek Product Specification Spec. No. : C086I3 Issued Date : 2015.10.05 Revised Date : Page No. : 4/10 CYStech Electronics Corp. Typical Characteristics Static Drain-Source On-resistance vs Ambient Temperature 12 11 10 9 8 7 6 5 4 3 2 1 0 3.0 10V 9V 8V 7V RDS(ON), Normalized Static Drain-Source On-state Resistance ID, Drain Current(A) Typical Output Characteristics 6.5 V 6V 5.5V VGS=5V 2.5 2.0 1.5 1.0 ID=2.8A, VGS=10V 0.5 0.0 0 10 20 30 VDS, Drain-Source Voltage(V) 40 -75 50 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C) 16 2.0 Ta=25°C 14 VGS=10V 1.6 ID, Drain Current(A) R DS(ON) , Static Drain-Source OnState Resistance(Ω) -25 Drain Current vs Gate-Source Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 0.8 0.4 VDS=30V 12 10 8 VDS=10V 6 4 2 0 0.0 0.01 0.1 1 ID, Drain Current(A) 0 10 2 100 8 10 IF, Forward Current(A) 10 6 4 10 VGS=0V 1 Ta=150°C Ta=25°C 0.1 0.01 ID=2.8A 2 4 6 8 VGS, Gate-Source Voltage(V) Forward Drain Current vs Source-Drain Voltage Static Drain-Source On-State Resistance vs Gate-Source Voltage RDS(ON), Static Drain-Source On-State Resistance(Ω) -50 Ta=25°C 0.001 0 0 2 4 6 VGS, Gate-Source Voltage(V) MTN6T62KI3S 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, Source Drain Voltage(V) CYStek Product Specification Spec. No. : C086I3 Issued Date : 2015.10.05 Revised Date : Page No. : 5/10 CYStech Electronics Corp. Typical Characteristics(Cont.) Capacitance vs Reverse Voltage Brekdown Voltage vs Ambient Temperature 10000 BVDSS, Normalized Drain-Source Breakdown Voltage 1.4 Capacitance(pF) Ciss 1000 Coss 100 f=1MHz 1.2 1.0 0.8 ID=250μA, VGS=0V Crss 10 0.6 0 5 10 15 20 25 VDS, Drain-to-Source Voltage(V) 30 -75 -50 -25 Gate Charge Characteristics Maximum Safe Operating Area 100 10 100μs 10 μs VDS=124V RDS(ON) Limited 10 VGS, Gate-Source Voltage(V) ID, Drain Current(A) 1ms 10ms 1 100ms DC TC=25°C, Tj(max)=150°C VGS=10V, RθJC=1.4°C/W Single pulse 0.1 VDS=310V 8 6 VDS=496V 4 2 ID=5.5A 0 0.01 1 10 100 0 1000 12 18 24 30 Qg, Total Gate Charge(nC) Maximum Drain Current vs Case Temperature Threshold Voltage vs Junction Tempearture VGS(th), Normalized Threshold Voltage 6 5 4 3 2 1 6 VDS, Drain-Source Voltage(V) 7 ID, Maximum Drain Current(A) 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C) VGS=10V, RθJC=1.4°C/W 36 1.4 1.2 ID=1mA 1 0.8 ID=250μA 0.6 0.4 0 25 50 75 100 125 TC, Case Temperature(°C) MTN6T62KI3S 150 175 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C086I3 Issued Date : 2015.10.05 Revised Date : Page No. : 6/10 Typical Characteristics(Cont.) Forward Transfer Admittance vs Drain Current Single Pulse Power Rating, Junction to Case 10 GFS , Forward Transfer Admittance(S) 2000 1800 TJ(MAX) =150°C TC=25°C RθJC=1.4°C/W 1600 Power (W) 1400 1200 1000 800 600 400 200 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 1 0.1 VDS=10V Ta=25°C Pulsed 0.01 0.001 0.01 0.1 1 ID, Drain Current(A) 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=1.4 °C/W 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 1.E-04 MTN6T62KI3S 1.E-03 1.E-02 1.E-01 t1, Square Wave Pulse Duration(s) 1.E+00 1.E+01 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C086I3 Issued Date : 2015.10.05 Revised Date : Page No. : 7/10 Test Circuit and Waveforms MTN6T62KI3S CYStek Product Specification CYStech Electronics Corp. Spec. No. : C086I3 Issued Date : 2015.10.05 Revised Date : Page No. : 8/10 Test Circuit and Waveforms(Cont.) MTN6T62KI3S CYStek Product Specification CYStech Electronics Corp. Spec. No. : C086I3 Issued Date : 2015.10.05 Revised Date : Page No. : 9/10 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN6T62KI3S CYStek Product Specification CYStech Electronics Corp. Spec. No. : C086I3 Issued Date : 2015.10.05 Revised Date : Page No. : 10/10 TO-251S Dimension Marking : Device Name Date Code 3-Lead TO-251S Plastic Package CYStek Package Code: I3 Style : Pin 1. Gate 2. Drain Inches Min. Max. 0.2559 0.2638 0.2020 0.2126 0.4094 0.4331 0.0280 0.0319 0.0858 0.0941 0.0858 0.0941 0.0181 0.0220 0.0902 0.0937 DIM A B C E F G H I Millimeters Min. Max. 6.50 6.70 5.13 5.46 10.40 11.00 0.71 0.81 2.18 2.39 2.18 2.39 0.46 0.56 2.29 2.38 DIM J K L M S T U V Inches Min. Max. 0.2362 0.2441 0.1299 0.1457 0.0358 0.0437 0.0181 0.0220 0.1902 REF 0.2106 REF 0.0701 REF 0.0299 REF 3. Source Millimeters Min. Max. 6.00 6.20 3.30 3.70 0.91 1.11 0.46 0.56 4.83 REF 5.35 REF 1.78 REF 0.76 REF Notes: 1.Controlling dimension: inch. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN6T62KI3S CYStek Product Specification