Single N-channel Trench MOSFET 30V, 16.9A, 10.1mΩ General Description Features The MDS1525 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDS1525 is suitable for DC/DC converter and general purpose applications. VDS = 30V ID = 16.9A @VGS = 10V RDS(ON) < 10.1mΩ @VGS = 10V < 14.9mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested D 6(D) 7(D) 8(D) 5(D) 2(S) G 4(G) 3(S) 1(S) S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 30 V ±20 V VGSS TC=25oC 16.9 TC=70oC Continuous Drain Current (1) TA=25 C (3) 11.8 TA=70oC 9.5(3) Pulsed Drain Current IDM 40 o Power Dissipation TC=25 C 5.1 TC=70oC 3.3 PD TA=25oC A W 2.5(3) TA=70oC Single Pulse Avalanche Energy A 13.6 ID o 1.6(3) (2) Junction and Storage Temperature Range EAS 43.6 TJ, Tstg -55~150 Symbol Rating RθJA 50 RθJC 24.2 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case June. 2011. Version1.2 1 Unit o C/W MagnaChip Semiconductor Ltd. MDS1525 – Single N-Channel Trench MOSFET 30V MDS1525 Part Number Temp. Range MDS1525URH Package Packing Quantity Rohs Status SOIC-8 Tape & Reel 3000 units Halogen Free o -55~150 C Electrical Characteristics (TJ = 25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.3 1.9 2.7 Drain Cut-Off Current IDSS Gate Leakage Current IGSS VDS = 30V, VGS = 0V TJ=55oC VGS = ±20V, VDS = 0V VGS = 10V, ID = 9A Drain-Source ON Resistance Forward Transconductance - 1 - 5 - - ±0.1 - 8.8 10.1 - 12.8 14.6 VGS = 4.5V, ID = 7A - 12.4 14.9 VDS = 5V, ID = 9A - 27.8 - 9.1 13.0 16.9 4.3 6.2 8.1 - 2.3 - - 2.0 - 554 792 1029 TJ=125oC RDS(ON) gfs - V µA mΩ S Dynamic Characteristics Total Gate Charge Qg(10V) Total Gate Charge Qg(4.5V) Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 15.0V, ID = 9A, VGS = 10V VDS = 15.0V, VGS = 0V, f = 1.0MHz nC Reverse Transfer Capacitance Crss 54 78 101 Output Capacitance Coss 108 154 200 Turn-On Delay Time td(on) - 5.8 - - 10.9 - - 21.1 - - 7.3 - 0.5 1.4 3.0 Ω - 0.83 1.1 V - 21.9 32.8 ns - 13.0 19.5 nC Rise Time Turn-Off Delay Time tr td(off) VGS = 10V, VDS = 15.0V, ID = 9A, RG = 3.0Ω Fall Time tf Gate Resistance Rg f=1 MHz VSD IS = 9A, VGS = 0V pF ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IF = 9A, dl/dt = 100A/µs Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 16.2A, VDD = 27V, VGS = 10V. 3. T < 10sec. June. 2011. Version1.2 2 MagnaChip Semiconductor Ltd. MDS1525 – Single N-Channel Trench MOSFET 30V Ordering Information 15 4.0V Drain-Source On-Resistance [mΩ] 3.5V ID, Drain Current [A] 4.5V 15 5.0V 8.0V VGS = 10V 3.0V 10 5 0 0.0 VGS = 4.5V 12 9 VGS = 10V 6 3 0.5 1.0 1.5 5 2.0 10 VDS, Drain-Source Voltage [V] 20 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 40 1.8 ※ Notes : VGS=10V ID=9A 1.6 RDS(ON) [mΩ ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 15 ID, Drain Current [A] 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 ID = 9A 30 20 TA = 25℃ 10 0 150 2 4 o 6 8 10 VGS, Gate to Source Volatge [V] TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 20 ※ Notes : ※ Notes : VDS = 5V 1 10 IDR, Reverse Drain Current [A] ID, Drain Current [A] 16 12 TA=25℃ 8 4 VGS = 0V TA=25℃ 0 10 10 -1 0 0 1 2 3 4 5 0.3 Fig.5 Transfer Characteristics June. 2011. Version1.2 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, Source-Drain voltage [V] VGS, Gate-Source Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDS1525 – Single N-Channel Trench MOSFET 30V 20 1200 ※ Note : ID = 9A Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] 8 Ciss Capacitance [pF] 900 6 4 600 300 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Coss 2 Crss 0 0 0 3 6 9 12 0 15 5 10 15 20 25 30 VDS, Drain-Source Voltage [V] Q G, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 20 Operation in This Area is Limited by R DS(on) 2 16 1 ms ID, Drain Current [A] ID, Drain Current [A] 10 10 ms 1 10 100 ms 1s 10s DC 0 10 12 8 4 Single Pulse TJ=Max rated TC=25℃ -1 10 0 25 10 -1 10 0 1 50 75 100 125 150 2 10 10 T C, Case Temperature [℃] VDS, Drain-Source Voltage [V] Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 2 Zθ JC, Thermal Response 10 D=0.5 1 10 0.2 0.1 0.05 0 10 0.02 0.01 single pulse -1 10 ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve June. 2011. Version1.2 4 MagnaChip Semiconductor Ltd. MDS1525 – Single N-Channel Trench MOSFET 30V 10 8 Leads, SOIC Dimensions are in millimeters unless otherwise specified DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. June. 2011. Version1.2 5 MagnaChip Semiconductor Ltd. MDS1525 – Single N-Channel Trench MOSFET 30V Physical Dimensions