isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD943/945/947 DESCRIPTION ·DC Current Gain: hFE= 85(Min)@ IC= 500mA ·Complement to Type BD944/946/948 APPLICATIONS ·Designed for use in audio output stages and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE BD943 22 BD945 32 BD947 45 BD943 22 BD945 32 BD947 45 UNIT V V Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc website：www.iscsemi.com 1 MAX UNIT 3.12 ℃/W 70 ℃/W isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD943/945/947 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD943 VCEO(SUS) Collector-Emitter Sustaining Voltage BD945 VBE(on) ICBO ICEO Collector-Emitter Saturation Voltage Base-Emitter On Voltage BD943/945 IC= 30mA ; IB= 0 32 UNIT V 45 IC= 2A; IB= 0.2A 0.5 BD947 IC= 3A; IB= 0.3A 0.7 BD943/945 IC= 2A; VCE= 1V 1.1 BD947 IC= 3A; VCE= 1V 1.3 VCB= VCBOmax; IE= 0 VCB= VCBOmax; IE= 0,TJ=150℃ 0.05 1.0 mA 0.1 mA 0.2 mA V BD943 VCE= 15V; IB= 0 BD945 VCE= 20V; IB= 0 BD947 VCE= 25V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 10mA ; VCE= 5V 25 hFE-2 DC Current Gain IC= 500mA ; VCE= 1V 85 BD943/945 hFE-3 MAX V Collector Cutoff Current Collector Cutoff Current TYP. 22 BD947 VCE(sat) MIN DC Current Gain 475 50 IC= 2A ; VCE= 1V BD947 40 hFE-4 DC Current Gain--Only For BD947 IC= 3A ; VCE= 1V 30 fT Current-Gain—Bandwidth Product IC= 250mA ; VCE= 1V 3 isc website：www.iscsemi.com 2 MHz isc & iscsemi is registered trademark