ON NCP103AMX360TCG Cmos low dropout regulator Datasheet

NCP103
150 mA CMOS Low Dropout
Regulator
The NCP103 is 150 mA LDO that provides the engineer with a very
stable, accurate voltage with low noise suitable for space constrained,
noise sensitive applications. In order to optimize performance for
battery operated portable applications, the NCP103 employs the
dynamic quiescent current adjustment for very low IQ consumption at
no−load.
Features
MARKING
DIAGRAM
1
• Operating Input Voltage Range: 1.7 V to 5.5 V
• Available in Fixed Voltage Options: 0.9 V to 3.5 V
•
•
•
•
•
•
•
•
•
www.onsemi.com
Contact Factory for Other Voltage Options
Very Low Quiescent Current of Typ. 50 mA
Standby Current Consumption: Typ. 0.1 mA
Low Dropout: 75 mV Typical at 150 mA
±1% Accuracy at Room Temperature
High Power Supply Ripple Rejection: 75 dB at 1 kHz
Thermal Shutdown and Current Limit Protections
Stable with a 1 mF Ceramic Output Capacitor
Available in uDFN 1.0 x 1.0 mm Package
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
UDFN4
MX SUFFIX
CASE 517CU
XX M
1
XX = Specific Device Code
M = Date Code
PIN CONNECTION
EN
IN
3
4
Typical Applicaitons
•
•
•
•
PDAs, Mobile phones, GPS, Smartphones
Wireless Handsets, Wireless LAN, Bluetooth®, Zigbee®
Portable Medical Equipment
Other Battery Powered Applications
2
1
GND
OUT
(Bottom View)
ORDERING INFORMATION
VIN
VOUT
IN
OUT
NCP103
CIN
EN
ON
GND
OFF
See detailed ordering, marking and shipping information on
page 14 of this data sheet.
COUT
1 mF
Ceramic
Figure 1. Typical Application Schematic
© Semiconductor Components Industries, LLC, 2016
December, 2017 − Rev. 13
1
Publication Order Number:
NCP103/D
NCP103
IN
ENABLE
LOGIC
EN
THERMAL
SHUTDOWN
BANDGAP
REFERENCE
MOSFET
DRIVER WITH
CURRENT LIMIT
OUT
AUTO LOW
POWER MODE
ACTIVE
DISCHARGE*
EN
GND
*Active output discharge function is present only in NCP103AMXyyyTCG devices.
yyy denotes the particular VOUT option.
Figure 2. Simplified Schematic Block Diagram
PIN FUNCTION DESCRIPTION
Pin No.
Pin Name
Description
1
OUT
Regulated output voltage pin. A small ceramic capacitor with minimum value of 1 mF is needed from this
pin to ground to assure stability.
2
GND
Power supply ground.
3
EN
Driving EN over 0.9 V turns on the regulator. Driving EN below 0.4 V puts the regulator into shutdown
mode.
4
IN
Input pin. A small capacitor is needed from this pin to ground to assure stability.
−
EPAD
Exposed pad should be connected directly to the GND pin. Soldered to a large ground copper plane allows
for effective heat removal.
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VIN
−0.3 V to 6 V
V
Output Voltage
VOUT
−0.3 V to VIN + 0.3 V or 6 V
V
Enable Input
VEN
−0.3 V to VIN + 0.3 V or 6 V
V
Output Short Circuit Duration
tSC
∞
s
TJ(MAX)
150
°C
TSTG
−55 to 150
°C
ESD Capability, Human Body Model (Note 2)
ESDHBM
2000
V
ESD Capability, Machine Model (Note 2)
ESDMM
200
V
Input Voltage (Note 1)
Maximum Junction Temperature
Storage Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per EIA/JESD22−A114,
ESD Machine Model tested per EIA/JESD22−A115,
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.
THERMAL CHARACTERISTICS (Note 3)
Rating
Thermal Characteristics, uDFN4 1x1 mm
Thermal Resistance, Junction−to−Air
3. Single component mounted on 1 oz, FR 4 PCB with 645 mm2 Cu area.
www.onsemi.com
2
Symbol
Value
Unit
RqJA
170
°C/W
NCP103
ELECTRICAL CHARACTERISTICS −40°C ≤ TJ ≤ 85°C; VIN = VOUT(NOM) + 1 V for VOUT options greater than 1.5 V. Otherwise VIN =
2.5 V, whichever is greater; IOUT = 1 mA, CIN = COUT = 1 mF, unless otherwise noted. VEN = 0.9 V. Typical values are at TJ = +25°C.
Min./Max. are for TJ = −40°C and TJ = +85°C respectively.
Parameter
Test Conditions
Operating Input Voltage
Output Voltage Accuracy
−40°C ≤ TJ ≤ 85°C
VOUT ≤ 2.0 V
Symbol
Min
VIN
VOUT
Max
Unit
1.7
5.5
V
−40
+40
mV
+2
%
Line Regulation
VOUT + 0.5 V ≤ VIN ≤ 5.5 V (VIN ≥ 1.7 V)
RegLINE
0.01
0.1
%/V
Load Regulation
IOUT = 1 mA to 150 mA
RegLOAD
10
30
mV
IOUT = 1 mA to 150 mA or 150 mA to 1 mA
in 1 ms, COUT = 1 mF
TranLOAD
−30/
+20
Load Transient
Dropout Voltage (Note 4)
VOUT > 2.0 V
Typ
180
235
VOUT = 1.85 V
120
165
75
125
72
120
70
120
65
110
VOUT = 3.0 V
VDO
VOUT = 3.1 V
VOUT = 3.3 V
Output Current Limit
mV
VOUT = 1.5 V
VOUT = 2.8 V
IOUT = 150 mA
−2
VOUT = 90% VOUT(nom)
ICL
IOUT = 0 mA
IQ
50
95
mA
Shutdown Current
VEN ≤ 0.4 V, VIN = 5.5 V
IDIS
0.01
1
mA
EN Pin Threshold Voltage
High Threshold
Low Threshold
VEN Voltage increasing
VEN Voltage decreasing
VEN_HI
VEN_LO
VEN = 5.5 V
IEN
0.3
PSRR
75
dB
VN
60
mVrms
Ground Current
EN Pin Input Current
150
550
mV
mA
V
0.4
1.0
mA
Power Supply Rejection Ratio
VIN = 3.6 V, VOUT = 3.1 V
IOUT = 150 mA
Output Noise Voltage
VIN = 2.5 V, VOUT = 1.8 V, IOUT = 150 mA
f = 10 Hz to 100 kHz
Thermal Shutdown Temperature
Temperature increasing from TJ = +25°C
TSD
160
°C
Temperature falling from TSD
TSDH
20
°C
VEN < 0.4 V, Version A only
RDIS
100
W
Thermal Shutdown Hysteresis
Active Output Discharge Resistance
f = 1 kHz
0.9
4. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 1 V.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
NCP103
TYPICAL CHARACTERISTICS
2.815
IOUT = 1 mA
1.204
VOUT, OUTPUT VOLTAGE (V)
VOUT, OUTPUT VOLTAGE (V)
1.206
1.202
1.200
IOUT = 150 mA
1.198
1.196
1.194
VIN = 2.5 V
VOUT = 1.2 V
CIN = 1 mF
COUT = 1 mF
1.192
1.190
1.188
−40 −30 −20 −10 0
10
20 30 40
2.810
2.800
2.790
2.785
2.775
10
20 30 40
50 60 70 80 90
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Output Voltage vs. Temperature
VOUT = 1.2 V
Figure 4. Output Voltage vs. Temperature
VOUT = 2.8 V
70
IGND, GROUND CURRENT (mA)
IQ, QUIESCENT CURRENT (mA)
VIN = 3.8 V
VOUT = 2.8 V
CIN = 1 mF
COUT = 1 mF
2.780
2.770
−40 −30 −20 −10 0
50 60 70 80 90
−40°C
60
50
85°C
25°C
40
30
20
VOUT = 2.8 V
CIN = 1 mF
COUT = 1 mF
10
0.5
1.0 1.5
2.0 2.5
3.0 3.5
4.0 4.5 5.0
5.5
600
550 VIN = 3.8 V
500 VOUT = 2.8 V
CIN = 1 mF
450
COUT = 1 mF
400
350
300
250
200
150
100
50
0
0.01
0.001
85°C
25°C
−40°C
0.1
1
10
100
1000
VIN, INPUT VOLTAGE (V)
IOUT, OUTPUT CURRENT (mA)
Figure 5. Quiescent Current vs. Input Voltage
Figure 6. Ground Current vs. Output Current
0.1
IOUT = 150 mA
540
480
420
360
300
240
180
IOUT = 1 mA
120
60
0
−40 −30 −20 −10 0
VIN = 3.8 V
VOUT = 2.8 V
CIN = 1 mF
COUT = 1 mF
10 20 30 40 50 60 70
REGLINE, LINE REGULATION (%/V)
600
IGND, GROUND CURRENT (mA)
IOUT = 150 mA
2.795
80
0
0.0
IOUT = 1 mA
2.805
80 90
0.08
0.06
0.04
0.02
0
−0.02
−0.04
−0.06
−0.08
−1
−40 −30 −20 −10 0
VIN = 1.7 V to 5.5 V
VOUT = 1.2 V
IOUT = 1 mA
CIN = 1 mF
COUT = 1 mF
10 20 30 40 50 60 70
80 90
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Ground Current vs. Temperature
Figure 8. Line Regulation vs. Output Current
VOUT = 1.2 V
www.onsemi.com
4
NCP103
TYPICAL CHARACTERISTICS
10
REGLOAD, LOAD REGULATION (mV)
REGLINE, LINE REGULATION (%/V)
0.1
0.08
0.06
0.04
0.02
0
−0.02
VIN = 3.8 V to 5.5 V
VOUT = 2.8 V
IOUT = 1 mA
CIN = 1 mF
COUT = 1 mF
−0.04
−0.06
−0.08
−0.1
−40 −30 −20 −10 0
10
20 30 40
50 60 70 80 90
7
6
5
4
VIN = 2.5 V
VOUT = 1.2 V
IOUT = 1 mA to 150 mA
CIN = 1 mF
COUT = 1 mF
3
2
1
0
−40 −30 −20 −10 0
10
20 30 40
50 60 70 80 90
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Line Regulation vs. Temperature
VOUT = 2.8 V
Figure 10. Load Regulation vs. Temperature
VOUT = 1.2 V
100
VDROP, DROPOUT VOLTAGE (mV)
REGLOAD, LOAD REGULATION (mV)
8
TJ, JUNCTION TEMPERATURE (°C)
10
9
8
7
6
5
4
VIN = 3.8 V
VOUT = 2.8 V
IOUT = 1 mA to 150 mA
CIN = 1 mF
COUT = 1 mF
3
2
1
0
−40 −30 −20 −10 0
10
20 30 40
90
80
70
60
TJ = 85°C
50
TJ = −40°C
40
30
VIN = 3.8 V
VOUT = 2.8 V
CIN = 1 mF
COUT = 1 mF
20
TJ = 25°C
10
0
0
50 60 70 80 90
15
30
45
60
75
90
105 120 135 150
TJ, JUNCTION TEMPERATURE (°C)
IOUT, OUTPUT CURRENT (mA)
Figure 11. Load Regulation vs. Temperature
VOUT = 2.8 V
Figure 12. Dropout Voltage vs. Output Current
VOUT = 2.8 V
100
800
750
90
IOUT = 150 mA
80
70
60
IOUT = 100 mA
50
40
IOUT = 0 mA
30
20
10
0
−40 −30 −20 −10 0
VIN = 3.8 V
VOUT = 2.8 V
CIN = 1 mF
COUT = 1 mF
10 20 30 40 50 60 70
ICL, CURRENT LIMIT (mA)
VDROP, DROPOUT VOLTAGE (mV)
9
700
650
VOUT = 2.8 V
600
VOUT = 1.2 V
550
500
450
400
350
80 90
300
−40 −30 −20 −10 0
VIN = VOUT(nom) + 1 V or 2.5 V
VOUT = 90% VOUT(nom)
CIN = 1 mF
COUT = 1 mF
10 20 30 40 50 60 70
80 90
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. Dropout Voltage vs. Temperature
Figure 14. Current Limit vs. Temperature
www.onsemi.com
5
NCP103
ISC, SHORT−CIRCUIT CURRENT (mA)
800
750
700
VOUT = 2.8 V
650
VOUT = 1.2 V
600
550
500
450
VIN = VOUT(nom) + 1 V or 2.5 V
VOUT = 0 V
CIN = 1 mF
COUT = 1 mF
400
350
300
−40 −30 −20 −10 0
10
20 30 40
800
750
700
650
600
550
500
450
400
VOUT = 0 V
CIN = 1 mF
COUT = 1 mF
350
300
50 60 70 80 90
3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6
TJ, JUNCTION TEMPERATURE (°C)
VIN, INPUT VOLTAGE (V)
Figure 15. Short−Circuit Current vs.
Temperature
Figure 16. Short−Circuit Current vs. Input
Voltage
350
0.9
315
0.8
IEN, ENABLE CURRENT (nA)
1
OFF −> ON
0.7
0.6
ON −> OFF
0.5
0.4
0.3
VIN = 3.8 V
VOUT = 2.8 V
CIN = 1 mF
COUT = 1 mF
0.2
0.1
0
−40 −30 −20 −10 0
10
20 30 40
VEN = 5.5 V
280
245
210
VEN = 0.4 V
175
140
105
35
0
−40 −30 −20 −10 0
50 60 70 80 90
VIN = 5.5 V
VOUT = 2.8 V
CIN = 1 mF
COUT = 1 mF
70
10
20 30 40
50 60 70 80 90
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 17. Enable Voltage Threshold vs.
Temperature
Figure 18. Current to Enable Pin vs.
Temperature
100
IDIS, DISABLE CURRENT (nA)
VEN, VOLTAGE ON ENABLE PIN (V)
ISC, SHORT−CIRCUIT CURRENT (mA)
TYPICAL CHARACTERISTICS
80
60
40
20
0
−20
−40
VIN = 5.5 V
VOUT = 2.8 V
CIN = 1 mF
COUT = 1 mF
−60
−80
−100
−40 −30 −20 −10 0
10 20 30 40 50 60 70
80 90
TJ, JUNCTION TEMPERATURE (°C)
Figure 19. Disable Current vs. Temperature
www.onsemi.com
6
NCP103
TYPICAL CHARACTERISTICS
OUTPUT VOLTAGE NOISE (mV/rtHz)
10000
IOUT = 150 mA
1000
IOUT
100
10
VIN = 2.5 V
VOUT = 1.2 V
CIN = 1 mF
COUT = 1 mF
1
0.01
0.1
IOUT = 10 mA
RMS Output Noise (mV)
10 Hz − 100 kHz
100 Hz − 100 kHz
1 mA
60.93
59.11
10 mA
52.73
50.63
150 mA
51.20
48.96
IOUT = 1 mA
1
100
10
1000
FREQUENCY (kHz)
Figure 20. Output Voltage Noise Spectral Density for VOUT = 1.2 V, COUT = 1 mF
OUTPUT VOLTAGE NOISE (mV/rtHz)
10000
IOUT = 150 mA
1000
IOUT
100
10
IOUT = 10 mA
VIN = 3.8 V
VOUT = 2.8 V
CIN = 1 mF
COUT = 1 mF
1
0.01
0.1
RMS Output Noise (mV)
10 Hz − 100 kHz
100 Hz − 100 kHz
74.66
1 mA
79.23
10 mA
75.03
70.37
150 mA
77.28
72.66
IOUT = 1 mA
1
10
100
1000
FREQUENCY (kHz)
Figure 21. Output Voltage Noise Spectral Density for VOUT = 2.8 V, COUT = 1 mF
OUTPUT VOLTAGE NOISE (mV/rtHz)
10000
IOUT = 150 mA
1000
IOUT
100
10
1 mA
VIN = 3.8 V
VOUT = 2.8 V
CIN = 1 mF
COUT = 4.7 mF
1
0.01
0.1
RMS Output Noise (mV)
10 Hz − 100 kHz
100 Hz − 100 kHz
80.17
75.29
10 mA
81.28
76.46
150 mA
81.31
76.77
IOUT = 10 mA
IOUT = 1 mA
1
10
100
1000
FREQUENCY (kHz)
Figure 22. Output Voltage Noise Spectral Density for VOUT = 2.8 V, COUT = 4.7 mF
www.onsemi.com
7
NCP103
TYPICAL CHARACTERISTICS
100
RR, RIPPLE REJECTION (dB)
80
70
60
50
40
30
20
10
0
0.1
VIN = 3.8 V
VOUT = 2.8 V
CIN = none
MLCC, X7R,
1206 size
1
10
100
1000
10000
IOUT = 1 mA
IOUT = 10 mA
IOUT = 150 mA
90
80
70
60
50
40
VIN = 3.8 V
VOUT = 2.8 V
CIN = none
MLCC, X7R,
1206 size
30
20
10
0
0.1
1
10
100
1000
10000
FREQUENCY (kHz)
FREQUENCY (kHz)
Figure 23. Power Supply Rejection Ratio,
VOUT = 1.2 V, COUT = 1 mF
Figure 24. Power Supply Rejection Ratio,
VOUT = 2.8 V, COUT = 4.7 mF
100
10
UNSTABLE OPERATION
ESR (W)
RR, RIPPLE REJECTION (dB)
100
IOUT = 1 mA
IOUT = 10 mA
IOUT = 150 mA
90
1
STABLE OPERATION
VIN = 5.5 V
CIN = 1 mF
COUT = 1 mF
MLCC, X7R,
1206 size
0.1
0.01
0
15
30
45
60
75
90
105 120 135
IOUT, OUTPUT CURRENT (mA)
Figure 25. Output Capacitor ESR vs. Output
Current
www.onsemi.com
8
150
NCP103
VOUT
IINRUSH
VOUT
40 ms/div
40 ms/div
IINRUSH
1 V/div
VOUT
VIN = 3.8 V
VOUT = 2.8 V
VEN = 1 V
COUT = 1 mF
CIN = 1 mF
IOUT = 150 mA
VEN
VOUT
40 ms/div
40 ms/div
Figure 28. Enable Turn−on Response,
COUT = 4.7 mF, IOUT = 1 mA
Figure 29. Enable Turn−on Response,
COUT = 4.7 mF, IOUT = 150 mA
VIN
VIN = 3.8 V to 4.8 V
VOUT = 2.8 V
COUT = 1 mF
CIN = 1 mF
tRISE = 1 ms
IOUT = 1 mA
500 mV/div
1 V/div
500 mV/div
VIN = 3.8 V
VOUT = 2.8 V
VEN = 1 V
COUT = 1 mF
CIN = 1 mF
IOUT = 1 mA
IINRUSH
500 mV/div
Figure 27. Enable Turn−on Response,
COUT = 1 mF, IOUT = 150 mA
200 mA/div
500 mV/div
Figure 26. Enable Turn−on Response,
COUT = 1 mF, IOUT = 1 mA
VEN
VIN = 4.8 V to 3.8 V
VOUT = 2.8 V
COUT = 1 mF
CIN = 1 mF
IOUT = 1 mA
VIN
tFALL = 1 ms
VOUT
10 mV/div
10 mV/div
200 mA/div
VEN
1 V/div
1 V/div
IINRUSH
VIN = 3.8 V
VOUT = 2.8 V
VEN = 1 V
COUT = 1 mF
CIN = 1 mF
IOUT = 150 mA
VOUT
20 ms/div
10 ms/div
Figure 30. Line Transient Response − Rising
Edge, VOUT = 2.8 V, IOUT = 1 mA
Figure 31. Line Transient Response − Falling
Edge, VOUT = 2.8 V, IOUT = 1 mA
www.onsemi.com
9
200 mA/div
VEN
500 mV/div
VIN = 3.8 V
VOUT = 2.8 V
VEN = 1 V
COUT = 1 mF
CIN = 1 mF
IOUT = 1 mA
200 mA/div
500 mV/div
TYPICAL CHARACTERISTICS
NCP103
VOUT
500 mV/div
tRISE = 1 ms
VIN = 3.8 V to 4.8 V
VOUT = 2.8 V
COUT = 10 mF
CIN = 1 mF
IOUT = 150 mA
VIN
20 mV/div
VIN
VOUT
tFALL = 1 ms
4 ms/div
Figure 33. Line Transient Response − Falling
Edge, VOUT = 2.8 V, IOUT = 150 mA
50 mA/div
4 ms/div
VIN = 2.5 V
VOUT = 1.2 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
IOUT
IOUT
tFALL = 1 ms
COUT = 1 mF
20 mV/div
20 mV/div
COUT = 4.7 mF
COUT = 1 mF
VOUT
COUT = 1 mF
4 ms/div
20 ms/div
Figure 34. Load Transient Response − Rising
Edge, VOUT = 1.2 V, IOUT = 1 mA to 150 mA,
COUT = 1 mF, 4.7 mF
Figure 35. Load Transient Response − Falling
Edge, VOUT = 1.2 V, IOUT = 1 mA to 150 mA,
COUT = 1 mF, 4.7 mF
VOUT
tRISE = 1 ms
50 mA/div
IOUT
IOUT
VIN = 3.8 V
VOUT = 2.8 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
tFALL = 1 ms
COUT = 1 mF
COUT = 4.7 mF
20 mV/div
50 mA/div
VIN = 2.5 V
VOUT = 1.2 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
tRISE = 1 ms
VOUT
20 mV/div
VIN = 4.8 V to 3.8 V
VOUT = 2.8 V
COUT = 1 mF
CIN = 1 mF
IOUT = 150 mA
Figure 32. Line Transient Response − Rising
Edge, VOUT = 2.8 V, IOUT = 150 mA
50 mA/div
20 mV/div
500 mV/div
TYPICAL CHARACTERISTICS
COUT = 1 mF
VIN = 3.8 V
VOUT = 2.8 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
COUT = 4.7 mF
VOUT
4 ms/div
10 ms/div
Figure 36. Load Transient Response − Rising
Edge, VOUT = 2.8 V, IOUT = 1 mA to 150 mA,
COUT = 1 mF, 4.7 mF
Figure 37. Load Transient Response − Falling
Edge, VOUT = 2.8 V, IOUT = 1 mA to 150 mA,
COUT = 1 mF, 4.7 mF
www.onsemi.com
10
NCP103
VIN = 3.8 V
VOUT = 2.8 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
IOUT
IOUT
500 mA/div
500 mA/div
TYPICAL CHARACTERISTICS
tRISE = 1 ms
tFALL = 1 ms
20 mV/div
VIN = 3.8 V
VIN = 5.5 V
VIN = 3.8 V
VOUT
VIN = 5.5 V
2 ms/div
10 ms/div
Figure 38. Load Transient Response − Rising
Edge, VOUT = 2.8 V, IOUT = 1 mA to 150 mA,
VIN = 3.8 V, 5.5 V
Figure 39. Load Transient Response − Falling
Edge, VOUT = 2.8 V, IOUT = 1 mA to 150 mA,
VIN = 3.8 V, 5.5 V
VIN = 5.5 V
VOUT = 2.8 V
IOUT = 10 mA
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
VIN
Overheating
Full Load
100 mA/div
20 mV/div
VOUT
VIN = 3.8 V
VOUT = 2.8 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
VOUT
VIN = 5.5 V
VOUT = 1.2 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
IOUT
Thermal Shutdown
1 V/div
50 mV/div
VOUT
TSD Cycling
4 ms/div
10 ms/div
Figure 40. Turn−on/off − Slow Rising VIN
Figure 41. Short−Circuit and Thermal
Shutdown
www.onsemi.com
11
NCP103
APPLICATIONS INFORMATION
General
The NCP103 is a high performance 150 mA Low Dropout
Linear Regulator. This device delivers very high PSRR
(over 75 dB at 1 kHz) and excellent dynamic performance
as load/line transients. In connection with very low
quiescent current this device is very suitable for various
battery powered applications such as tablets, cellular
phones, wireless and many others. The device is fully
protected in case of output overload, output short circuit
condition and overheating, assuring a very robust design.
disable state the device consumes as low as typ. 10 nA from
the VIN.
If the EN pin voltage >0.9 V the device is guaranteed to
be enabled. The NCP103 regulates the output voltage and
the active discharge transistor is turned−off.
The EN pin has internal pull−down current source with
typ. value of 300 nA which assures that the device is
turned−off when the EN pin is not connected. In the case
where the EN function isn’t required the EN should be tied
directly to IN.
Input Capacitor Selection (CIN)
Output Current Limit
It is recommended to connect at least a 1mF Ceramic X5R
or X7R capacitor as close as possible to the IN pin of the
device. This capacitor will provide a low impedance path for
unwanted AC signals or noise modulated onto constant
input voltage. There is no requirement for the min. /max.
ESR of the input capacitor but it is recommended to use
ceramic capacitors for their low ESR and ESL. A good input
capacitor will limit the influence of input trace inductance
and source resistance during sudden load current changes.
Larger input capacitor may be necessary if fast and large
load transients are encountered in the application.
Output Current is internally limited within the IC to a
typical 550 mA. The NCP103 will source this amount of
current measured with a voltage drops on the 90% of the
nominal VOUT. If the Output Voltage is directly shorted to
ground (VOUT = 0 V), the short circuit protection will limit
the output current to 580 mA (typ). The current limit and
short circuit protection will work properly over whole
temperature range and also input voltage range. There is no
limitation for the short circuit duration.
Thermal Shutdown
When the die temperature exceeds the Thermal Shutdown
threshold (TSD − 160°C typical), Thermal Shutdown event
is detected and the device is disabled. The IC will remain in
this state until the die temperature decreases below the
Thermal Shutdown Reset threshold (TSDU * 140°C
typical). Once the IC temperature falls below the 140°C the
LDO is enabled again. The thermal shutdown feature
provides the protection from a catastrophic device failure
due to accidental overheating. This protection is not
intended to be used as a substitute for proper heat sinking.
Output Decoupling (COUT)
The NCP103 requires an output capacitor connected as
close as possible to the output pin of the regulator. The
recommended capacitor value is 1 mF and X7R or X5R
dielectric due to its low capacitance variations over the
specified temperature range. The NCP103 is designed to
remain stable with minimum effective capacitance of
0.22 mF to account for changes with temperature, DC bias
and package size. Especially for small package size
capacitors such as 0402 the effective capacitance drops
rapidly with the applied DC bias.
There is no requirement for the minimum value of
Equivalent Series Resistance (ESR) for the COUT but the
maximum value of ESR should be less than 3 W. Larger
output capacitors and lower ESR could improve the load
transient response or high frequency PSRR. It is not
recommended to use tantalum capacitors on the output due
to their large ESR. The equivalent series resistance of
tantalum capacitors is also strongly dependent on the
temperature, increasing at low temperature.
Power Dissipation
As power dissipated in the NCP103 increases, it might
become necessary to provide some thermal relief. The
maximum power dissipation supported by the device is
dependent upon board design and layout. Mounting pad
configuration on the PCB, the board material, and the
ambient temperature affect the rate of junction temperature
rise for the part.
The maximum power dissipation the NCP103 can handle
is given by:
Enable Operation
P D(MAX) +
The NCP103 uses the EN pin to enable/disable its device
and to deactivate/activate the active discharge function.
If the EN pin voltage is <0.4 V the device is guaranteed to
be disabled. The pass transistor is turned−off so that there is
virtually no current flow between the IN and OUT. The
active discharge transistor is active so that the output voltage
VOUT is pulled to GND through a 100 W resistor. In the
ƪ125° C * T Aƫ
q JA
(eq. 1)
The power dissipated by the NCP103 for given
application conditions can be calculated from the following
equations:
P D [ V INǒI GND@I OUTǓ ) I OUTǒV IN * V OUTǓ
www.onsemi.com
12
(eq. 2)
NCP103
qJA, JUNCTION−TO−AMBIENT
THERMAL RESISTANCE (°C/W)
240
PD(MAX), TA = 25°C, 2 oz Cu
0.9
220
PD(MAX), TA = 25°C, 1 oz Cu
200
180
qJA, 1 oz Cu
160
0.7
0.6
140
qJA, 2 oz Cu
0.5
120
100
0
0.8
100
200
300
400
500
600
PD(MAX), MAXIMUM POWER
DISSIPATION (W)
1
260
0.4
700
COPPER HEAT SPREADER AREA (mm2)
Figure 42. qJA vs. Copper Area (uDFN4)
Reverse Current
nominal value. This time is dependent on various
application conditions such as VOUT(NOM), COUT and TA.
For example typical value for VOUT = 1.2 V, COUT = 1 mF,
IOUT = 1 mA and TA = 25°C is 90 ms.
The PMOS pass transistor has an inherent body diode
which will be forward biased in the case that VOUT > VIN.
Due to this fact in cases, where the extended reverse current
condition can be anticipated the device may require
additional external protection.
PCB Layout Recommendations
To obtain good transient performance and good regulation
characteristics place CIN and COUT capacitors close to the
device pins and make the PCB traces wide. In order to
minimize the solution size, use 0402 capacitors. Larger
copper area connected to the pins will also improve the
device thermal resistance. The actual power dissipation can
be calculated from the equation above (Equation 2). Expose
pad should be tied the shortest path to the GND pin.
Power Supply Rejection Ratio
The NCP103 features very good Power Supply Rejection
ratio. If desired the PSRR at higher frequencies in the range
100 kHz − 10 MHz can be tuned by the selection of COUT
capacitor and proper PCB layout.
Turn−On Time
The turn−on time is defined as the time period from EN
assertion to the point in which VOUT will reach 98% of its
www.onsemi.com
13
NCP103
ORDERING INFORMATION
Voltage
Option
Marking
NCP103AMX090TCG
0.9 V
AQ
0°
NCP103AMX100TCG
1.0 V
5
180°
NCP103AMX105TCG
1.05 V
A
0°
NCP103AMX110TCG
1.1 V
E
180°
NCP103AMX120TCG
1.2 V
D
0°
NCP103AMX125TCG
1.25 V
D
180°
NCP103AMX130TCG
1.3 V
AD
0°
NCP103AMX150TCG
1.5 V
E
0°
NCP103AMX160TCG
1.6 V
Y
180°
NCP103AMX180TCG
1.8 V
K
180°
NCP103AMX185TCG
1.85 V
F
0°
NCP103AMX210TCG
2.1 V
P
180°
NCP103AMX220TCG
2.2 V
R
180°
NCP103AMX240TCG
2.4 V
AL
0°
NCP103AMX250TCG
2.5 V
AX
0°
NCP103AMX260TCG
2.6 V
V
180°
NCP103AMX270TCG
2.7 V
AK
0°
NCP103AMX280TCG
2.8 V
J
0°
NCP103AMX285TCG
2.85 V
K
0°
NCP103AMX300TCG
3.0 V
L
0°
NCP103AMX310TCG
3.1 V
P
0°
NCP103AMX320TCG
3.2 V
AY
0°
NCP103AMX330TCG
3.3 V
Q
0°
NCP103AMX345TCG
3.45 V
AE
0°
NCP103AMX350TCG
3.5 V
3
180°
NCP103AMX360TCG
3.6 V
AV
0°
NCP103BMX100TCG
1.0 V
5
270°
NCP103BMX105TCG
1.05 V
A
90°
NCP103BMX110TCG
1.1 V
E
270°
NCP103BMX120TCG
1.2 V
D
90°
NCP103BMX125TCG
1.25 V
D
270°
NCP103BMX130TCG
1.3 V
CD
0°
NCP103BMX150TCG
1.5 V
E
90°
NCP103BMX160TCG
1.6 V
Y
270°
NCP103BMX180TCG
1.8 V
K
270°
NCP103BMX185TBG
1.85 V
CJ
0°
NCP103BMX185TCG
1.85 V
CJ
0°
NCP103BMX210TCG
2.1 V
P
270°
NCP103BMX220TCG
2.2 V
R
270°
NCP103BMX250TCG
2.5 V
CH
0°
NCP103BMX260TCG
2.6 V
V
270°
Device
Marking
Rotation
NCP103BMX280TCG
2.8 V
J
90°
NCP103BMX285TCG
2.85 V
K
90°
NCP103BMX300TCG
3.0 V
L
90°
NCP103BMX310TCG
3.1 V
P
90°
NCP103BMX330TCG
3.3 V
Q
90°
NCP103BMX345TCG
3.45 V
CE
0°
NCP103BMX350TCG
3.5 V
3
270°
Option
Package
Shipping†
With active output
discharge function
uDFN4
(Pb-Free)
3000 / Tape & Reel
Without active output
discharge function
uDFN4
(Pb-Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
14
NCP103
PACKAGE DIMENSIONS
UDFN4 1.0x1.0, 0.65P
CASE 517CU
ISSUE A
A
B
D
PIN ONE
REFERENCE
2X
0.05 C
2X
0.05 C
ÉÉ
ÉÉ
C0.27 x 0.25
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.03 AND 0.07
FROM THE TERMINAL TIPS.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
3X C0.18
X 45 5
L2
DETAIL A
DIM
A
A1
A3
b
D
D2
E
e
L
L2
TOP VIEW
A
0.10 C
(A3)
A1
0.05 C
NOTE 4
C
SIDE VIEW
MILLIMETERS
MIN
MAX
−−−
0.60
0.00
0.05
0.15 REF
0.20
0.30
1.00 BSC
0.38
0.58
1.00 BSC
0.65 BSC
0.20
0.30
0.27
0.37
SEATING
PLANE
RECOMMENDED
MOUNTING FOOTPRINT*
e
e/2
DETAIL A
1
2
3X
2X
0.65
PITCH
L
0.58
3X
DETAIL B
0.43
PACKAGE
OUTLINE
D2
45 5
D2
4
4X
0.23
1.30
3
4X
BOTTOM VIEW
b
0.10
M
C A B
0.05
M
C
0.53
1
4X
0.30
NOTE 3
3X 0.10
DETAIL B
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Bluetooth is a registered trademark of Bluetooth SIG.
ZigBee is a registered trademark of ZigBee Alliance.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
◊
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
15
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NCP103/D