MMDT2227Q 40V COMPLEMENTARY NPN/PNP SMALL SIGNAL TRANSISTOR Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BVCEO >40V IC = 600mA High Collector Current Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Finish; Solderable per MIL-STD202, Method 208 Weight: 0.006 grams (Approximate) SOT363 Top View Device Symbol Top View Pin-Out Ordering Information (Note 5) Product Compliance Marking Reel Size (inch) Tape Width (mm) Quantity per Reel MMDT2227Q-7-F Automotive K27 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/product-compliance-definitions/. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information SOT363 Date Code Key Year Code Month Code 2017 E 2018 F YM K27 K27 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: E = 2017) M or M = Month (ex: 9 = September) 2019 G 2020 H 2021 I 2022 J 2023 K 2024 L Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 1 2 3 4 5 6 7 8 9 O N D MMDT2227Q Document number: DS40088 Rev. 1 - 2 1 of 6 www.diodes.com November 2017 © Diodes Incorporated MMDT2227Q Absolute Maximum Ratings, NPN (2222A Type) (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Symbol VCBO VCEO VEBO IC Value 75 40 6 600 Unit V V V mA Absolute Maximum Ratings, PNP (2907A Type) (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Thermal Characteristics Symbol VCBO VCEO VEBO IC Value -60 -60 -6 -600 Unit V V V mA Value 200 625 150 -55 to +150 Unit mW °C/W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 7) Operating and Storage and Temperature Range Symbol PD RθJA RθJC TJ, TSTG ESD Ratings (Note 8) Characteristic Electrostatic Discharge - Human Body Model Symbol ESD HBM Value 4,000 Unit V JEDEC Class 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For the device mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 7. Thermal resistance from junction to the top of package. 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. Thermal Characteristic and Derating Information MMDT2227Q Document number: DS40088 Rev. 1 - 2 2 of 6 www.diodes.com November 2017 © Diodes Incorporated MMDT2227Q Electrical Characteristics, NPN (2222A Type) (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 9) Emitter-Base Breakdown Voltage Symbol Min Max Unit BVCBO BVCEO BVEBO 75 40 6.0 Collector-Base Cut-Off Current ICBO 10 Collector-Emitter Cut-Off Current Emitter-Base Cut-Off Current Base Cut-Off Current ON CHARACTERISTICS (Note 9) ICEX IEBO IBL 10 10 20 V V V nA µA nA nA nA hFE 35 50 75 100 40 50 35 300 DC Current Gain Collector-Emitter Saturation Voltage VCE(SAT) 0.3 1.0 V Base-Emitter Saturation Voltage VBE(SAT) 0.60 1.2 2.0 V Cobo Cibo 8 25 pF pF Current Gain-Bandwidth Product fT 300 MHz Noise Figure NF 4.0 dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time tD tR tS tF 10 25 225 60 ns ns ns ns SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Test Condition IC = 100µA, IE = 0 IC = 10.0mA, IB = 0 IE = 100µA, IC = 0 VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = +150°C VCE = 60V, VEB(OFF) = 3.0V VEB = 5.0V, IC = 0 VCE = 60V, VEB(OFF) = 3.0V IC = 100µA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V IC = 500mA, VCE = 10 IC = 10mA, VCE = 10V, TA = -55°C IC = 150mA, VCE = 1.0V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB =10V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 20V, IC = 20mA, f = 100MHz VCE = 10V, IC = 100A, RS = 1.0k f = 1.0kHz VCC = 30V, IC = 150mA, VBE(OFF) = 0.5V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 =- IB2 = 15mA 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. Note: 100 VCE COLLECTOR-EMITTER VOLTAGE (V) 2.0 f = 1MHz CAPACITANCE (pF) 30 20 Cibo 10 5.0 Cobo 1.0 0.1 1.0 10 VR, REVERSE VOLTAGE (V) Fig. 1 (2222A) Typical Capacitance MMDT2227Q Document number: DS40088 Rev. 1 - 2 50 3 of 6 www.diodes.com 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.1 10 1 IB, BASE CURRENT (mA) Fig. 2 Typical Collector Saturation Region (2222A Type - NPN) 0.01 100 November 2017 © Diodes Incorporated MMDT2227Q Electrical Characteristics, PNP (2907A Type) (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 10) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Symbol Min Max Unit BVCBO BVCEO BVEBO -60 -60 -6.0 Collector Cutoff Current ICBO -10 Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 10) ICEX IBL -50 -50 V V V nA A nA nA hFE 75 100 100 100 50 300 Collector-Emitter Saturation Voltage VCE(SAT) -0.4 -1.6 V Base-Emitter Saturation Voltage VBE(SAT) -1.3 -2.6 V Cobo Cibo 8.0 30 pF pF fT 200 MHz tON tD tR tOFF tS tF 45 10 40 100 80 30 ns ns ns ns ns ns DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time Notes: IC = -100A, IE = 0 IC = -10mA, IB = 0 IE = -100A, IC = 0 VCB = -50V, IE = 0 VCB = -50V, IE = 0, TA = +125°C VCE = -30V, VEB(OFF) = -0.5V VCE = -30V, VEB(OFF) = -0.5V IC = -100µA, VCE = -10V IC = -1.0mA, VCE = -10V IC = -10mA, VCE = -10V IC = -150mA, VCE = -10V IC = -500mA, VCE = -10V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = -10V, f = 1.0MHz, IE = 0 VEB = -2.0V, f = 1.0MHz, IC = 0 VCE = -20V, IC = -50mA, f = 100MHz VCC = -30V, IC = -150mA, IB1 = -15mA VCC = -6.0V, IC = -150mA, IB1 = -IB2 = -15mA 10. Short duration pulse test used to minimize self-heating effect. 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) -1.6 f = 1MHz CAPACITANCE (pF) Test Condition 30 Cibo 20 10 Cobo 5.0 1.0 -0.1 -1.0 -10 VR, REVERSE VOLTAGE (V) Fig. 3 (2907A) Typical Capacitance MMDT2227Q Document number: DS40088 Rev. 1 - 2 IC = -10mA -1.4 IC = -300mA IC = -100mA -1.2 IC = -1mA IC = -30mA -1.0 -0.8 -0.6 -0.4 -0.2 -30 4 of 6 www.diodes.com 0 -0.001 -0.1 -0.01 -1 -10 IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region (2907A Type - PNP) -100 November 2017 © Diodes Incorporated MMDT2227Q Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 E SOT363 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 1.00 b 0.10 0.30 0.25 c 0.10 0.22 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC F 0.40 0.45 0.425 L 0.25 0.40 0.30 a 0° 8° -All Dimensions in mm E1 F b D A2 c L e A1 a Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 C Dimensions G Y1 C G X Y Y1 Value (in mm) 0.650 1.300 0.420 0.600 2.500 Y X MMDT2227Q Document number: DS40088 Rev. 1 - 2 5 of 6 www.diodes.com November 2017 © Diodes Incorporated MMDT2227Q IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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