INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB7734,IIRFB7734 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Synchronous Rectifier applications ·Resonant mode power supplies ·Battery powered circuits ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 183 A IDM Drain Current-Single Pulsed 650 A PD Total Dissipation @TC=25℃ 290 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ MAX UNIT 0.51 ℃/W 62 ℃/W Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB7734,IIRFB7734 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250µA 75 VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA 2.1 RDS(on) Drain-Source On-Resistance VGS=10V; ID=100A Gate-Source Leakage Current VGS=± 20V IGSS CONDITIONS VSD TYP MAX UNIT V 3.7 V 3.5 mΩ ±100 nA 1 μA VDS=75V; VGS= 0V;Tj=125℃ 150 μA IS =100A, VGS = 0 V 1.2 V VDS=75V; VGS= 0V IDSS MIN Drain-Source Leakage Current Diode forward voltage isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark